Abstract: [Object] A film is deposited on a substrate with high productivity and more uniform film thickness distribution. [Solving Means] In a deposition apparatus, a substrate holder supports at least one substrate facing a first target, rotates around a first central axis, and is configured such that the substrate is rotatable around a second central axis deviated from the first central axis. A vacuum chamber houses the first target and the substrate holder. A power source supplies discharge power to the first target. A gas supply mechanism supplies a discharge gas to the vacuum chamber.

Abstract: A method of forming a film of this invention includes: rotating, inside a vacuum chamber, a to-be-processed substrate with a center of the to-be-processed substrate, while revolving the to-be-processed substrate on the same plane about a revolution shaft; and feeding a film-forming material from a film-forming source to form a predetermined thin film on a surface of the to-be-processed substrate.

Abstract: A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Abstract: A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.

Abstract: A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.

Abstract: A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Abstract: A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion.

Abstract: A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.

Abstract: A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.

Abstract: A target is produced inexpensively by safely incorporating an additive which is inflammable in the atmosphere. A primary alloy in a molten state is formed by adding an additive into a principal material in a low-level oxygen atmosphere, and a secondary alloy is produced by increasing the volume of the primary alloy through adding the principal material to the molten primary alloy in the atmospheric atmosphere. Since the primary alloys in the molten or solid condition are stable, it does not ignite in the atmosphere. Since the volume of the primary alloy is smaller than that of the secondary alloy, a smaller size of a vacuum chamber 11 for the formation of the first atmosphere suffices.