Abstract: A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112).

Abstract: Provided is a blank structure for a ring member of a bearing in which a cut target surface after stainless steel is forged has uniform surface characteristics, and highly accurate cutting processing is enabled. A blank (10), which is processed to an outer race (2) and an inner race (3) of a bearing, includes: a cylindrical portion (11, 12) formed by forging a stainless-steel material, and having an inner circumferential surface (11a, 12a) and an outer circumferential surface (11b, 12b) entirely being surface eutectic carbides fragmented beds; and a clamp portion (13) provided to one end portion side of the cylindrical portion (11, 12).

Abstract: A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

Abstract: A method for manufacturing a semiconductor laser device includes forming a laminate having a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type. The waveguide region is formed to guide light perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer, such that the semiconductor laser device has a first waveguide region and a second waveguide region. The first waveguide region is formed to confine light within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer. In forming the second waveguide region, light is confined therein by providing effective difference in refractive index in the active layer.

Abstract: The present invention provides a nitride semiconductor device wherein on a substrate having a first main surface and a second main surface, a nitride semiconductor layer is formed on the first main surface and an electrode is formed on the second main surface, wherein the substrate comprises dislocation concentration regions, and on the dislocation concentration regions on the second main surface of the substrate, the electrode having at least an opening region is formed, and the edge surface of the substrate has a region roughly matching the edge surface of the electrode formed on the dislocation concentration regions. With the present invention, device separation can be stabilized and a nitride semiconductor device is provided having good ohmic contact between a nitride semiconductor layer and electrode.

Abstract: A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

Abstract: A semiconductor laser device comprises a laminate consisting of a semiconductor layer of first conductivity type, an active layer and a semiconductor layer of second conductivity type, which is different from the first conductivity type, that are stacked in order, with a waveguide region being formed to guide a light beam in a direction perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer and in the proximity thereof, wherein the waveguide region has a first waveguide region and a second waveguide region, the first waveguide region is a region where light is confined within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer, and the second waveguide region is a region where the light is confined therein by providing effective difference in refractive index in the active layer.

Abstract: The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.

Abstract: The invention discloses that a nitride semiconductor laser element is able to comply with requirement of high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer (205) and a p-type semiconductor layer each laminated on the main surface of the substrate (101) and comprising a nitride, wherein a striped ridge portion (2) is formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region (1) for reducing the capacitance of the element.

Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0?x?0.1, 0.5?y?1, 0.5?x+y?1) and has a stripe-shaped window 32 formed therein to pass current flow.

Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0?x?0.1, 0.5?y?1, 0.5?x+y?1) and has a stripe-shaped window 32 formed therein to pass current flow.

Abstract: A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112).

Abstract: The present invention provides a nitride semiconductor device wherein on a substrate having a first main surface and a second main surface, a nitride semiconductor layer is formed on the first main surface and an electrode is formed on the second main surface, wherein the substrate comprises dislocation concentration regions, and on the dislocation concentration regions on the second main surface of the substrate, the electrode having at least an opening region is formed, and the edge surface of the substrate has a region roughly matching the edge surface of the electrode formed on the dislocation concentration regions. With the present invention, device separation can be stabilized and a nitride semiconductor device is provided having good ohmic contact between a nitride semiconductor layer and electrode.

Abstract: A ridge waveguide semiconductor laser diode is disclosed that comprises an n-type semiconductor layer, a p-type semiconductor layer having a ridge forming a waveguide and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer. The laser diode also includes a first protective insulating layer partially covering the ridge so as to expose at least a portion of a top face of the ridge, a p-side ohmic electrode in ohmic contact with the portion of the ridge, a p-side pad electrode disposed so as to electrically connect to the p-side ohmic electrode; and an intermediate layer is disposed between the p-side ohmic electrode and the p-side pad electrode so as to cover a portion of the p-side ohmic electrode including an area that covers the top face of the ridge. The intermediate layer can be a diffusion prevention layer for preventing diffusion of a low melting point.

Abstract: A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

Abstract: A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Abstract: A semiconductor laser device comprises a laminate consisting of a semiconductor layer of first conductivity type, an active layer and a semiconductor layer of second conductivity type, which is different from the first conductivity type, that are stacked in order, with a waveguide region being formed to guide a light beam in a direction perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer and in the proximity thereof, wherein the waveguide region has a first waveguide region and a second waveguide region, the first waveguide region is a region where light is confined within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer, and the second waveguide region is a region where the light is confined therein by providing effective difference in refractive index in the active layer.

Abstract: A semiconductor laser device comprises a laminate consisting of a semiconductor layer of first conductivity type, an active layer and a semiconductor layer of second conductivity type, which is different from the first conductivity type, that are stacked in order, with a waveguide region being formed to guide a light beam in a direction perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer and in the proximity thereof, wherein the waveguide region has a first waveguide region and a second waveguide region, the first waveguide region is a region where light is confined within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer, and the second waveguide region is a region where the light is confined therein by providing effective difference in refractive index in the active layer.

Abstract: A laser device having at least a semiconductor laser element, a window allowing light emitted from the emission end face of the semiconductor laser element to pass therethrough, a photodetector detecting a portion of emitted light reflected from the window that is not being transmitted, and a stem whereon the semiconductor laser element and the photodetector are installed. The window is disposed vertically above the semiconductor laser element. The photodetector is placed at an angle with respect to a horizontal plane and is located contiguous with the main surface of the stem. The laser device is capable of maintaining a stable APC drive regardless of the deterioration of the semiconductor laser element that may occur from continuous oscillation for a long time.

Abstract: The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.