Abstract: Herein disclosed is a bipolar memory having redundancy, which can be produced with a small area. In this semiconductor memory having a body memory for storing data and a spare memory for relief of fault bit of the body memory, a row is selected by cutting fuses in a decoder. Fundamentally signal lines such as word lines are not provided with fuses. Other parts including a power source and a reference voltage source are provided with fuses without decreasing the operating speed accompanied by only a slight increase in the area.

Abstract: A semiconductor circuit of a current mode type logic is provided having a reference voltage generating circuit which generates the reference voltage to be applied to the logic circuit in response to a clock signal to latch the state corresponding to an input signal at an instant of the clock signal input. The reference voltage has three levels in response to the voltage levels of the clock signal and the input signal: a middle voltage between the two high and low voltage levels of the input signal when the clock signal is at a first level voltage; a voltage higher than the high voltage level of the input signal when the clock signal is at a second level voltage and the output signal is at a high voltage; and a voltage lower than the low voltage level of the input signal when the clock signal is at a second level voltage and the output signal is at a second level voltage and the output signal is at a low voltage.