Abstract: Embodiments of the application provide a light emitting device, a backlight module and a display panel. The light emitting device comprises: a substrate; a plurality of light emitters mounted on the substrate; and a light-transmissive resin on each of the light emitters, wherein the resin is in close contact with the light emitter and a part of the substrate, a surface of the light-transmissive resin away from the light emitter and the substrate forms an exit surface, the center of the light emitter and the center of the exit surface are located in a first optical axis, a region of the exit surface near the first optical axis is recessed toward the light emitter to form a concave surface, which is configured to totally reflect part of light emitted from the center of the light emitter and transmit part of light emitted from the edge of the light emitter.

Abstract: Embodiments of the application provide a light emitting device, a backlight module and a display panel. The light emitting device comprises: a substrate; a plurality of light emitters mounted on the substrate; and a light-transmissive resin on each of the light emitters, wherein the resin is in close contact with the light emitter and a part of the substrate, a surface of the light-transmissive resin away from the light emitter and the substrate forms an exit surface, the center of the light emitter and the center of the exit surface are located in a first optical axis, a region of the exit surface near the first optical axis is recessed toward the light emitter to form a concave surface, which is configured to totally reflect part of light emitted from the center of the light emitter and transmit part of light emitted from the edge of the light emitter.

Abstract: This light emitting device includes a light emitting element and a light flux controlling member. The light flux controlling member includes an incident surface, an emission surface, a back surface, a protruding portion and a scattering portion. In a cross section including a central axis, an angle formed by two beams, which are emitted from the light emitting device and have a maximum luminous intensity, is 150° or more. In a cross section including a central axis, predetermined light is made incident at an incident angle of 60° and an average angle, which is formed by, among the light reflected by the scattering portion, a light ray having a maximum light amount and a light ray having a light amount of 50% of the maximum light amount, is 5° or more.

Abstract: This light emitting device includes a light emitting element and a light flux controlling member. The light flux controlling member includes an incident surface, an emission surface, a back surface, a protruding portion and a scattering portion. In a cross section including a central axis, an angle formed by two beams, which are emitted from the light emitting device and have a maximum luminous intensity, is 150° or more. In a cross section including a central axis, predetermined light is made incident at an incident angle of 60° and an average angle, which is formed by, among the light reflected by the scattering portion, a light ray having a maximum light amount and a light ray having a light amount of 50% of the maximum light amount, is 5° or more.

Abstract: There are provided an inorganic film in which the light transmittance is not decreased also when the inorganic film is laminated on organic material such as a resin, and a laminate. An inorganic film 13 which comprises a refractive index gradient film 13a having a refractive index changing continuously from n1 to n2 (n1<n2) and being a functional film; and a refractive index gradient film 13b having a refractive index changing continuously from n3 to n4 (n4<n3) and being a functional film, and in which further, a difference between n2 and n3 is 0.1 or less.

Abstract: A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4??Formula (2) where Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; at least one of Ar3 and Ar4 is a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.

Abstract: A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2): ?O—Ar2—O—Ar3-T-Ar4???Formula (2) where Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; at least one of Ar3 and Ar4 is a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.

Abstract: There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

Abstract: There are provided an inorganic film in which the light transmittance is not decreased also when the inorganic film is laminated on organic material such as a resin, and a laminate. An inorganic film 13 which comprises a refractive index gradient film 13a having a refractive index changing continuously from n1 to n2 (n1<n2) and being a functional film; and a refractive index gradient film 13b having a refractive index changing continuously from n3 to n4 (n4<n3) and being a functional film, and in which further, a difference between n2 and n3 is 0.1 or less.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

Abstract: There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): ?O—Ar1???Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): ?O—Ar2—O—Ar3-T-Ar4???Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.

Abstract: A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit.