Abstract: A cell includes an element portion, a gas-flow passage, a first metal portion, a second metal portion, and a reinforcing portion. Reaction gas flows through the gas-flow passage. The first metal portion is located between one surface side of the gas-flow passage and the element portion, and supports the element portion. The second metal portion is located on the other surface side opposite to the one surface side of the gas-flow passage. The reinforcing portion is located inside the gas-flow passage and faces the first metal portion and the second metal portion.

Abstract: A cell includes an element portion and a metal member. The metal member includes a first gas-flow passage and a second gas-low passage, and supports the element portion. First gas flows through the first gas-flow passage. Second gas flows through the second gas-flow passage.

Abstract: Provided are a cell (1), a cell stack device (20), a module (30), and a module housing device (40). The cell 1 includes a metal plate (2) having a pair of surfaces, which are a first surface (2a) and a second surface (2b) that face each other, an element portion (6) disposed on the first surface (2a) of the metal plate (2), and including a first electrode layer (3), a solid electrolyte layer (4) located on the first electrode layer (3), and a second electrode layer (5) located on the solid electrolyte layer (4), and an intermediate layer (9) located between the first surface (2a) and the first electrode layer (3). The intermediate layer (9) has a plurality of first through holes penetrating through the intermediate layer (9) in a thickness direction.

Abstract: Provided are a cell (1), a cell stack device (20), a module (30), and a module housing device (40). The cell (1) includes a metal plate (2) having a pair of surfaces, which are a first surface (2a) and a second surface that face each other, and containing Cr, an element portion (6) disposed on the metal plate (2), the element portion (6) including a first electrode layer (3), a solid electrolyte layer (4) located on the first electrode layer (3), and a second electrode layer (5) located on the solid electrolyte layer (4), and a first intermediate layer (9) located between the first surface (2a) of the metal plate (2) and the first electrode layer (3). The first intermediate layer 9 contains Cr2O3 and a first electrically conductive particle different from Cr2O3.

Abstract: A cell stack device including: a cell stack comprising a plurality of cells; a support member; and a fixing part between the support member and the at least one cell of the plurality of cells, wherein in a cross section including the support member, the fixing part, and the at least one cell, the fixing part includes: a first region arranged close to the support member; a second region closer to the at least one cell than the first region; and a third region between the first region and the second region, and at least one of the first region and the second region includes a porous region having a porosity that is higher than a porosity of the third region.

Abstract: A cell stack device including: a cell stack comprising a plurality of cells; a support member; and a fixing part between the support member and the at least one cell of the plurality of cells, wherein in a cross section including the support member, the fixing part, and the at least one cell, the fixing part includes: a first region arranged close to the support member; a second region closer to the at least one cell than the first region; and a third region between the first region and the second region, and at least one of the first region and the second region includes a porous region having a porosity that is higher than a porosity of the third region.

Abstract: A cordierite sintered body and a member for semiconductor manufacturing apparatus are disclosed. The cordierite sintered body includes a crystal phase and an amorphous phase. The crystal phase includes a main crystal phase that essentially consists of cordierite crystal grains; and a sub crystal phase that includes sub crystal grains containing alumina, mullite or sapphirine. The amorphous phase contains calcium and is located at grain boundaries of the cordierite crystal grains and the sub crystal grains. A crystal phase proportion of the main crystal phase to the crystal phase (or total of the main crystal phase and the sub crystal phase) is 95% to 97.5% by mass or less. A crystal phase proportion of the sub crystal phase to the crystal phase is 2.5% to 5% by mass or less. The sintered body contains calcium by 0.4% to 0.6% by mass or less in terms of CaO.

Abstract: An alumina sintered article comprising 99.3 mass % or more Al in terms of Al2O3, strontium and silicon is disclosed. The alumina sintered article also comprises alumina crystal grains and an oxide crystal comprising aluminum, silicon, strontium located at a triple pocket surrounded by three or more alumina crystal grains. The alumina sintered article improves dielectric loss in the megahertz to gigahertz bands while maintaining corrosion resistance, mechanical properties of alumina.

Abstract: An alumina sintered article comprising 99.3 mass % or more Al in terms of Al2O3, strontium and silicon is disclosed. The alumina sintered article also comprises alumina crystal grains and an oxide crystal comprising aluminum, silicon, strontium located at a triple pocket surrounded by three or more alumina crystal grains. The alumina sintered article improves dielectric loss in the megahertz to gigahertz bands while maintaining corrosion resistance, mechanical properties of alumina.

Abstract: A composite ceramic of the present invention includes granular alumina particles (A) having an aspect ratio of 3 or less, granular zirconia particles (B) having an aspect ratio of 3 or less, and a columnar crystal (C) having an aspect ratio of 3 or more, the columnar crystal including a complex metal oxide containing an alkaline-earth metal element and aluminum element. The composite ceramic has high flexural strength, toughness, and hardness, and achieves excellent hot-water resistance and high flexural strength after hydrothermal degradation resistance test.

Abstract: Alumina/zirconia ceramics containing Al2O3 in an amount of not less than 65 mass % and ZrO2 in an amount of 4 to 34 mass %, and further containing TiO2, MgO and SiO2. The ceramics effectively suppresses the growth of shape isotropic particles of alumina, suppresses the growth of zirconia particles, and has a high strength and a high hardness. Besides, the ceramics containing SrO features a high fracture toughness.

Abstract: Alumina/zirconia ceramics containing Al2O3 in an amount of not less than 65 mass % and ZrO2 in an amount of 4 to 34 mass %, and further containing TiO2, MgO and SiO2. The ceramics effectively suppresses the growth of shape isotropic particles of alumina, suppresses the growth of zirconia particles, and has a high strength and a high hardness. Besides, the ceramics containing SrO features a high fracture toughness.