Abstract: A gas turbine plant includes an exhaust line, a carbon dioxide recovery device configured to recover carbon dioxide contained in an exhaust gas, a circulation line connected to a gas turbine, a first valve device, a bypass line bypassing the carbon dioxide recovery device, a second valve device provided on the bypass line, a third valve device provided at a position between the bypass line and the carbon dioxide recovery device, a densitometer configured to detect a carbon dioxide concentration in the exhaust gas, and a control device configured to adjust opening degrees of the first valve device, the second valve device, and the third valve device based on an operation state of the gas turbine and the carbon dioxide concentration.

Abstract: A gas turbine plant includes an exhaust line, a carbon dioxide recovery device configured to recover carbon dioxide contained in an exhaust gas, a circulation line connected to a gas turbine, a first valve device, a bypass line bypassing the carbon dioxide recovery device, a second valve device provided on the bypass line, a third valve device provided at a position between the bypass line and the carbon dioxide recovery device, a densitometer configured to detect a carbon dioxide concentration in the exhaust gas, and a control device configured to adjust opening degrees of the first valve device, the second valve device, and the third valve device based on an operation state of the gas turbine and the carbon dioxide concentration.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film 3 placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. QV which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q? which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).

Abstract: The present invention provides a highly stable fragrance-containing capsule. This fragrance-containing capsule is characterized in being obtained from: a core substance comprising a specified fragrance, such as 3-octanol, and an oil; and a wall material formed from one or more polymers selected from poly(alkyl(meth)acrylates) and polystyrene.

Abstract: The present invention provides a method for producing ditrimethylolpropane which is characterized by the following (1) and (2): (1) a distillation still residue separated from purified trimethylolpropane is subjected to re-distillation under specific conditions to obtain a ditrimethylolpropane-containing solution having given contents of bis-TMP and tri-TMP; and (2) when subjecting the ditrimethylolpropane-containing solution to crystallization with an organic solvent, the crystallization is initiated under pressure at a temperature exceeding a boiling point of the organic solvent as measured under normal pressures, and the resulting crystallization product solution is cooled at a temperature drop rate of 2° C./min or less. According to the above method, it is possible to produce a high-purity ditrimethylolpropane from a distillation still residue obtained upon production of trimethylolpropane in a simple, industrially useful manner.

Abstract: Provided is a lighting device (3) that includes a light guide plate (10) having a light entry surface (10a) through which the light originating from a light-emitting diode unit (9) enters, and a light-emitting surface (10c) from which the light that has entered through the light entry surface (10a) exits. The light-emitting diode unit (9) has light-emitting elements (26a and 27a) arranged linearly on a base member (28) with a prescribed interval therebetween, and sealing resin elements (26b and 27b) that seal respective light-emitting elements (26a and 27a). The light entry surface (10a) of the light guide plate (10) is shaped so as to engage with the sealing resin elements (26b and 27b).

Abstract: A plurality of first and second sensor pixel circuits each sensing light during a designated sensing period and retaining the amount of sensed light otherwise are arranged in a pixel region. A backlight is turned on once for a predetermined time in one-frame period. A sensing period when the backlight is turned on and a sensing period when the backlight is turned off are set once, respectively, in the one-frame period. The first sensor pixel circuit is reset. The second sensor pixel circuit is reset. Read from sensor pixel circuits of two types is performed in parallel in a line sequential manner during a period other than the periods and. A difference circuit provided outside of the sensor pixel circuits is used for obtaining a difference between an amount of light when the backlight is turned on and an amount of light when the backlight is turned off.

Abstract: The present invention provides a method for producing ditrimethylolpropane which is characterized by the following (1) and (2): (1) a distillation still residue separated from purified trimethylolpropane is subjected to re-distillation under specific conditions to obtain a ditrimethylolpropane-containing solution having given contents of bis-TMP and tri-TMP; and (2) when subjecting the ditrimethylolpropane-containing solution to crystallization with an organic solvent, the crystallization is initiated under pressure at a temperature exceeding a boiling point of the organic solvent as measured under normal pressures, and the resulting crystallization product solution is cooled at a temperature drop rate of 2° C./min or less. According to the above method, it is possible to produce a high-purity ditrimethylolpropane from a distillation still residue obtained upon production of trimethylolpropane in a simple, industrially useful manner.

Abstract: A photoelectric conversion element (1) of the present invention includes: a photoelectric conversion layer (2); and a photonic crystal provided inside the photoelectric conversion layer (2) to provide a photonic band gap, the photonic crystal being designed such that nanorods (30) whose refraction index is smaller than that of a medium of the photoelectric conversion layer (2) are provided periodically inside the photoelectric conversion layer (2), and there are provided defects (31) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is ?, the nanorods (30) are provided two-dimensionally with a pitch of not less than ?/7 and not more than ?/2, and a coefficient ?V indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient ? of absorption of light by the photoelectric conversion layer (2).

Abstract: A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. QV which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q? which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).

Abstract: A light guide plate has a main-side microprism array sheet (main-side MPA sheet) 3 adhered to the top face 2a thereof, and a sub-side microprism array sheet (sub-side MPA sheet) 4 adhered to the bottom face 2b thereof. A prism formation region of the sub-side MPA sheet 4 is smaller than that of the main-side MPA sheet 3. Prisms in the prism formation region of the main-side MPA sheet 3 are, in an arrangement where the density of prisms arranged increases with distance from a light source 5, so arranged that the density of prisms arranged increases in a region that faces the prism formation region of the sub-side MPA sheet 4.

Abstract: A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than ?/4 nor more than ?, where ? is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2QV?Q??5.

Abstract: A plurality of first and second sensor pixel circuits each sensing light during a designated sensing period and retaining the amount of sensed light otherwise are arranged in a pixel region. A backlight is turned on once for a predetermined time in one-frame period. A sensing period when the backlight is turned on and a sensing period when the backlight is turned off are set once, respectively, in the one-frame period. The first sensor pixel circuit is reset. The second sensor pixel circuit is reset. Read from sensor pixel circuits of two types is performed in parallel in a line sequential manner during a period other than the periods and. A difference circuit provided outside of the sensor pixel circuits is used for obtaining a difference between an amount of light when the backlight is turned on and an amount of light when the backlight is turned off.

Abstract: In a liquid crystal display device, noise light to a photodetecting element is reduced, whereby an improved S/N ratio is achieved. The liquid crystal display device includes: a first substrate (100) on which a pixel circuit is provided; a second substrate (101) arranged so as to face the first substrate (100) with a liquid crystal layer (30) being interposed therebetween; a photodetecting element (17) provided on the first substrate (100); and a detection light filter (18) that is provided between the photodetecting element (17) and the liquid crystal layer (30) and that cuts off light in a band outside a signal light band that is a band of light to be detected by the photodetecting element (17).

Abstract: A wavelength selective reflection element according to the present invention includes: an upper transparent plate (12) on which a guide-mode resonant grating (11) is formed; a lower transparent plate (13) disposed facing the upper transparent plate (12); and MEMS switches (14) and (15) being microelectromechanical systems, provided on (i) a side of one edge of the upper transparent plate (12) and a corresponding one edge of the lower transparent plate (13) and (ii) a side of another edge of the substrate and a corresponding another edge of the transparent plate, the side of the another edge being a side of an edge of the upper transparent plate (12) and a corresponding edge of the lower transparent plate (13) which faces the side of the one edge. This allows for causing a change in a gap between the upper transparent plate (12) and the lower transparent plate (13), by driving at least one of the MEMS switches.

Abstract: A reflection type display device (10) includes: a plasmon resonance layer (32) in which metal nanoparticles (80) are dispersed; a band-pass filter (40); a light shutter (20); and a silicon solar cell layer (50a) being provided close to the plasmon resonance layer (32). The band-pass filter (40) and the light shutter (20) are provided so as to overlap the plasmon resonance layer (32) in planar view. The reflection type display device (10) performs display in such a manner that: the metal nanoparticles (80) allow light having a specific wavelength to pass through; the light is then reflected by the band-pass filter (40); and the light shutter (20) adjusts an intensity of the light thus reflected.

Abstract: A display device with touch sensor functionality with an enlarged distinction margin between the touch state and the non-touch state is provided. The display device with touch sensor functionality includes a light-collecting/blocking film (116) on the surface of the display device. The light-collecting/blocking film (116) includes an opening (212) that collects and passes light exiting the display device to the outside, and a light-blocking portion (213) that blocks a portion of light entering the display device.

Abstract: A red color filter (13R) includes a first absorbent having an absorption wavelength region in most of a low wavelength region other than the wavelength region of red light (R) emitted by fluorescence and a second absorbent having an absorption wavelength region overlapping with the wavelength region of blue light (B) included in the rest of the wavelength region other than most of the low wavelength region.