Abstract: An SiC semiconductor device includes an SiC semiconductor chip that has a main surface, an n-type drift region that is formed in a surface layer portion of the main surface and has an impurity concentration adjusted by at least two types of pentavalent elements, and a p-type impurity region that is formed inside the drift region such as to form a pn-junction portion with the drift region.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface, a trench gate structure formed at the main surface, a trench source structure formed at the main surface away from the trench gate structure in one direction, an insulating film covering the trench gate structure and the trench source structure above the main surface, a gate main surface electrode formed on the insulating film and a gate wiring that is led out from the gate main surface electrode onto the insulating film such as to cross the trench gate structure and the trench source structure in the one direction, and that is electrically connected to the trench gate structure through the insulating film, and that faces the trench source structure with the insulating film between the trench source structure and the gate wiring.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a trench structure formed at the first surface such as to be exposed from the connecting surface, and a sidewall wiring that is formed on the second surface such as to cover the connecting surface and that is electrically connected to the trench structure.

Abstract: A SiC semiconductor device includes SiC chip having main surface that includes first surface, second surface hollowed in thickness direction at first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth and a trench source structure that has a third depth exceeding the second depth and that adjoins the trench gate structure in one direction, and a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a plurality of dummy trench source structures which have the third depth and adjoin each other in the one direction.

Abstract: An organic EL device of the present invention includes: a base layer; a plurality of bottom electrodes arranged in a surface portion of the base layer at an interval in a lateral direction along a surface of the base layer; an organic layer which contains an organic light emitting material and is placed on the base layer so as to cover the plurality of bottom electrodes collectively and divided into a plurality of pixels respectively corresponding to the plurality of bottom electrodes; a top electrode opposed to the plurality of bottom electrodes with the organic layer interposed therebetween; and a gate electrode, which is placed at a region between mutually adjacent bottom electrodes in a planar view seen from the normal direction of the surface of the base layer, for turning off a parasitic transistor formed by cooperation of the top electrode and mutually adjacent bottom electrodes.

Abstract: An organic EL device of the present invention includes: a base layer; a plurality of bottom electrodes arranged in a surface portion of the base layer at an interval in a lateral direction along a surface of the base layer; an organic layer which contains an organic light emitting material and is placed on the base layer so as to cover the plurality of bottom electrodes collectively and divided into a plurality of pixels respectively corresponding to the plurality of bottom electrodes; a top electrode opposed to the plurality of bottom electrodes with the organic layer interposed therebetween; and a gate electrode, which is placed at a region between mutually adjacent bottom electrodes in a planar view seen from the normal direction of the surface of the base layer, for turning off a parasitic transistor formed by cooperation of the top electrode and mutually adjacent bottom electrodes.

Abstract: There is provided a layered color filter which can improve optical selectivity, without reducing optical transparency, an organic EL light emitting device on which such a layered color filter is mounted, and a fabrication method of such an organic EL light emitting device. The layered color filter includes a substrate 60, a red color filter 40R1, 40R2, a green color filter 40G1, 40G2, and a blue color filter 40B1, 40B2, 40B3 disposed on the substrate 60. In the layered color filter, the organic EL light emitting device on which such a layered color filter is mounted, and the fabrication method thereof, at least one color filter among the red color filter 40R1, 40R2, the green color filter 40G1, 40G2, and the blue color filter 40B1, 40B2, 40B3 is laminated to be formed as a plurality of thin film layers.

Abstract: A solid state image sensor for color image pick up, including: a circuit section formed on a substrate; a lower electrode layer arranged on the circuit section; a compound semiconductor thin film with a chalcopyrite structure, which is arranged on the lower electrode layer; a transparent electrode layer arranged on the compound semiconductor thin film; and a visible light filter arranged on the transparent electrode layer, wherein the lower electrode layer, the compound semiconductor thin film and the transparent electrode layer are sequentially stacked on the circuit section, and in addition, thin a film thickness of the compound semiconductor thin film below the visible light filter, and absorb only visible light. A solid state image sensor for color image pick up is provided, which does not require an infrared removal filter for luminous efficacy correction, and matches color reproduction characteristics thereof with human luminous efficacy.