Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; an oxide semiconductor layer that is used as a channel layer; and a gate insulator film that is arranged between the gate electrode and the channel layer. The oxide semiconductor layer is configured of at least one metal element that is selected from the group consisting of In, Ga, Zn and Sn (excluding the cases where the oxide semiconductor layer is constituted of metal elements Sn, and at least one of In and Zn). The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Abstract: The invention relates to establishment of a series of artificial luciferases based on artificial amino acid sequences extracted by amino acid alignment of copepod-derived luciferase sequences in a database based on amino acid similarity. The invention provides high luminescence intensity, high luminescence stability, and a spectrum with increased wavelength as luminescence characteristics. A series of artificial luciferases (ALuc) was established. The group of ALucs has superior luminescence characteristics, such as an increase in luminescence intensity, an increase in luminescence stability, or an increase in wavelength of the luminescence spectrum, which were not obtained before. Further, by using the artificial luciferases (ALuc) of the invention, it is possible to provide a novel, superior bioassay system, such as a bioluminescent probe, two-hybrid assay, a luminescent capsule, or the like having improved measurement function.

Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Abstract: The invention relates to a bioluminescent substrate suitably usable in a series of artificial luciferases (ALuc), and the invention provides a wavelength-shifted spectrum with a selective high intensity luminescence and high luminescence stability obtained by the use of the substrate together with ALuc. The luminescent substrate for ALuc obtained by the invention can be included together with a suitable luminescence solution in a luminescence kit. The bioluminescent substrate for ALuc of the invention can exhibit unprecedented excellent luminescence specificity and functionality in the conventional bioluminescence probe, two-hybrid assay, bioluminescent capsule, and reporter gene assay.

Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Abstract: The invention relates to a bioluminescent substrate suitably usable in a series of artificial luciferases (ALuc), and the invention provides a wavelength-shifted spectrum with a selective high intensity luminescence and high luminescence stability obtained by the use of the substrate together with ALuc. The luminescent substrate for ALuc obtained by the invention can be included together with a suitable luminescence solution in a luminescence kit. The bioluminescent substrate for ALuc of the invention can exhibit unprecedented excellent luminescence specificity and functionality in the conventional bioluminescence probe, two-hybrid assay, bioluminescent capsule, and reporter gene assay.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: Provided is an oxide-semiconductor-based thin film transistor having satisfactory switching characteristics and stress resistance. Change in threshold voltage through stress application is suppressed in the thin film transistor. The thin film transistor of excellent stability comprises a substrate and, formed thereon, at least a gate electrode, a gate insulating film, oxide semiconductor layers, a source-drain electrode, and a passivation film for protecting the gate insulating film, and oxide semiconductor layers, wherein the oxide semiconductor layers are laminated layers comprising a second oxide semiconductor layer consisting of In, Zn, Sn, and O and a first oxide semiconductor layer consisting of In, Ga, Zn, and O. The second oxide semiconductor layer is formed on the gate insulating film. The first oxide semiconductor layer is interposed between the second oxide semiconductor layer and the passivation film.

Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Abstract: A protrusion 53 is shaped to protrude from a main body 51 toward a supporter non-contact part 23 so as to circumvent a supporter 30. The protrusion 53 includes a protrusion heat transfer surface 55 which is a surface on the battery heat transfer surface 20 side (i.e., an upper side Y2). A heat conduction member 40 contacts with the supporter non-contact part 23 and the protrusion heat transfer surface 55.

Abstract: An electric storage apparatus in which a first projecting portion projecting on one side and a second projecting portion projecting on the opposite side of the one side are formed at different positions in a direction orthogonal to a direction in which the first and second projecting portions project.

Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Abstract: Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end?the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%.

Abstract: The invention relates to establishment of a series of artificial luciferases based on artificial amino acid sequences extracted by amino acid alignment of copepod-derived luciferase sequences in a database based on amino acid similarity. The invention provides high luminescence intensity, high luminescence stability, and a spectrum with increased wavelength as luminescence characteristics. A series of artificial luciferases (ALuc) was established. The group of ALucs has superior luminescence characteristics, such as an increase in luminescence intensity, an increase in luminescence stability, or an increase in wavelength of the luminescence spectrum, which were not obtained before. Further, by using the artificial luciferases (ALuc) of the invention, it is possible to provide a novel, superior bioassay system, such as a bioluminescent probe, two-hybrid assay, a luminescent capsule, or the like having improved measurement function.

Abstract: Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Abstract: A spotter that includes a plurality of spotting heads, each of the plurality of spotting heads having a discharging portion at a tip portion, the plurality of spotting heads form an m×n array (m, n>1) with m spotting heads arranged lengthwise and n spotting heads arranged crosswise; and a pitch varying mechanism configured to vary an array pitch of the plurality of spotting heads arrayed in a lengthwise direction and an array pitch of the plurality of spotting heads arrayed in a crosswise direction.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.