Abstract: A method for manufacturing a thin sheet-like bonding member, including applying a paste including first particles including a first metal, second particles including a second metal having a lower melting point than the first metal, and a solvent to a surface of a base material made of a substance that does not react with the second metal; heating the paste at a temperature lower than a melting point of the first metal and higher than the melting point of the second metal to form a thin sheet-like bonding member on the surface of the base material; and peeling the thin sheet-like bonding member from the base material to obtain the thin sheet-like bonding member.

Abstract: A heat sink having a coolant flow path formed inside through which a coolant flows includes: a heat transfer plate having a first surface on which a semiconductor device is disposed and a second surface; a junction flow path-forming plate having a third surface and a fourth surface; a first partition wall provided in contact with the second surface and the third surface; and first fins provided in contact with the second surface. The coolant flow path includes a first flow path. A plurality of first divided regions separated by the at least one first partition wall are formed in the first flow path. The plurality of first fins are arranged by being spaced side by side in the first divided regions.

Abstract: A brazing material is interposed between an aluminum-based material and an iron-based material plated with Ni. The brazing material has a structure in which an Al—Si—Ni based alloy layer and an Al layer are bonded via a flux layer. A structure for brazing is formed such that the Al—Si—Ni based alloy layer is located on the aluminum-based material side and the Al layer is located on the iron-based material side. The structure is heated in a furnace and is thereafter cooled, thereby obtaining a brazed joint body in which the Ni plating that is a barrier layer remains and an Al—Ni layer is formed.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: Provided is a heat treatment device including: a laser oscillator configured to produce a laser; one or more optical systems each configured to irradiate an object to be treated with the laser produced from the laser oscillator; and a rotating table on which the object is to be mounted. When a reaching temperature of the object, at which an activation rate of the object reaches a target value through one-time irradiation with the laser, is set as a first temperature, a second temperature lower than the first temperature is set as a target value of the reaching temperature of the object, and the object is repeatedly irradiated with the laser from one of the one or more optical systems two or more times.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A bonding material that contains first particles containing a first metal, second particles containing a second metal having a melting point lower than that of the first metal, and filling resin is supplied on one of a semiconductor element or a conductor member, and a gap is formed in a surface of the supplied bonding material. The other of the conductor member or the semiconductor element is mounted on and pressed against the bonding material in which the gap is formed, and the filling resin unevenly distributed on the surface of the bonding material is moved to the gap.

Abstract: A heat treatment apparatus includes a laser oscillation unit, a stage, an optical system, and a moving unit. The laser oscillation unit oscillates laser light. The stage holds an irradiation target to be irradiated with the laser light. The optical system guides the laser light to the irradiation target. The moving unit relatively changes the positional relationship between the optical system and the irradiation target. Furthermore, the heat treatment apparatus includes a detection unit and a determination unit. The detection unit detects the power of first reflected light that is the laser light reflected from the surface of the irradiation target. On the basis of a detection value of the power of the first reflected light detected by the detection unit, the determination unit determines the presence or absence of a change in the surface temperature of an area irradiated with the laser light on the irradiation target.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A semiconductor device includes a circuit substrate which is configured with an insulative substrate formed of a ceramic material and provided on its one surface with an electrode formed of a copper material, and a power semiconductor element bonded with the electrode using a sinterable silver-particle bonding material, wherein the electrode has a Vickers hardness of 70 HV or more in its portion from the bonding face with the power semiconductor element toward the insulative substrate to a depth of 50 ?m, and has a Vickers hardness of 50 HV or less in its portion at the side toward the insulative substrate.

Abstract: An apparatus for modifying part of a predetermined packet comprises means (31) for receiving a TS and determining whether or not each TS packet is a predetermined packet, means (32) for delaying the TS, means (33) for modifying part of the predetermined packet, and means (34) for receiving a delayed TS and a modified predetermined packet and selectively outputting the delayed TS packet and the modified predetermined packet. The third means (33) overwrites an ID described in a predetermined or a similar item (for example, Number) on a predetermined ID or a similar item (for example, Number).

Abstract: An apparatus comprises means (31) for receiving a broadcast TS (transport stream) and detecting layer information in each broadcast TS packet, means (32) for delaying the broadcast TS, means (37) for inputting an MPEG-TS for rewriting, means (33) for generating a signal for selecting a delayed broadcast TS packet when the layer information does not indicate a predetermined layer, and generating a signal for selecting an MPEG-TS packet for rewriting when the layer information indicates the predetermined layer, and means (38) for selectively outputting the delayed broadcast TS packet and the MPEG-TS packet for rewriting. The apparatus may further comprise means (34) for modifying a PAT packet of the broadcast TS, and means (35) for modifying an NIT packet of the broadcast TS, where the apparatus can selectively output the modified PAT packet and modified NIT packet.

Abstract: An MPEG-TS reproduction apparatus comprises: storage means (21) for storing multiple video TSs, multiple audio TSs and at least one PSI/SI•TS (or PSI/PSIP•TS); selection means (22) for enabling selection of one video TS, one audio TS and one PSI/SI•TS (or PSI/PSIP•TS) from among the multiple TSs stored in the storage means (21); and output means (23) for reading out, via the selection means (22), one video TS, one audio TS and one PSI/SI•TS (or PSI/PSIP•TS), multiplexing the read TSs, and outputting the multiplexed TSs as a single MPEG-TS.

Abstract: Provided is bamboo charcoal-mixed composition 6 having an increased adsorbability in comparison with bamboo charcoal by dispersing at least bamboo charcoal powder 8 and tourmaline powder 10 into binder 14. Also provided is carrier 2 having reodorizing and antibacterial effects by holding bamboo charcoal-mixed composition 6 on base material 4 such as nonwoven fabric and pulp. Bamboo charcoal-mixed composition 6 and carrier 2 are used for various purposes such as food preservation, deodorization, antibacteria and absorption of volatile components included in building materials.

Abstract: Crimped yarns that comprise a conjugate multifilament yarn having unique surface texture, dry touch, and stretchability; woven/knitted products comprising said crimped yarn; and production methods of crimped yarn as a conjugate multifilament yarn comprising polyester polymer components and has (a) number of crimps (CA): 2.5 crests/cm≦CA≦10 crests/cm, (b) number of developed crimps (CB): 8 crests/cm≦CB≦30 crests/cm, (c) shrinkage stress (TS): 0.0882≦TS (cN/dtex)≦0.221, (d) apparent shrinkage percentage (SC): 40%≦SC≦80%, and (e) shrinkage percentage of fiber in boiling water (SW): 2%≦SW≦8%, and produced by subjecting a crimp-forming conjugate multifilament yarn to relaxation-heat treatment.