Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An aqueous curable composition includes a water-soluble photopolymerization initiator having a structure in which one or more carbonyl groups further directly bond to an aromatic ring of an aromatic acyl group that bonds to a phosphorus atom in an acylphosphine oxide structure, water, and a polymerizable compound. A novel water-soluble photopolymerization initiator is a compound represented by formula 1-1 or formula 2-1.

Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: A photopolymerization initiator which is a compound having a structure in which one or more carbonyl groups that link to a carbon atom are further directly bonded to an aromatic ring of an aromatic acyl group that bonds to a phosphorus atom in an acylphosphine oxide structure. A producing method of a photopolymerization initiator produces the photopolymerization initiator. In a polymerizable composition and an ink jet recording method, the photopolymerization initiator is used. Furthermore, an acylphosphine oxide compound has a partial structure represented by Formula 1 or Formula 2.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

Abstract: An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less. In General Formula (1) and General Formula (2), at least one of R5, . . . , or R8 is a group other than a hydrogen atom.

Abstract: An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

Abstract: An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).

Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

Abstract: An electroconductive-film-forming composition capable of forming an electroconductive film having excellent conductivity and few voids and a method for producing an electroconductive film using the same. The electroconductive-film-forming composition contains copper particles having an average particle diameter of 1 nm to 10 ?m, copper oxide particles having an average particle diameter of 1 nm to 500 nm, a reducing agent having a hydroxy group, a metal catalyst including metals other than copper, and a solvent, in which the content of the copper oxide particles is 50% by mass to 300% by mass with respect to the content of the copper particles, the content of the reducing agent is 100 mol % to 800 mol % with respect to the content of the copper oxide particles, and the content of the metal catalyst is 10% by mass or less with respect to the content of the copper oxide particles.

Abstract: Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An electroconductive-film-forming composition capable of forming an electroconductive film having excellent conductivity and few voids and a method for producing an electroconductive film using the same. The electroconductive-film-forming composition contains copper particles having an average particle diameter of 1 nm to 10 copper oxide particles having an average particle diameter of 1 nm to 500 nm, a reducing agent having a hydroxy group, a metal catalyst including metals other than copper, and a solvent, in which the content of the copper oxide particles is 50% by mass to 300% by mass with respect to the content of the copper particles, the content of the reducing agent is 100 mol % to 800 mol % with respect to the content of the copper oxide particles, and the content of the metal catalyst is 10% by mass or less with respect to the content of the copper oxide particles.

Abstract: The present invention provides a non-resonant two-photon absorption recording material containing a non-resonant polymer two-photon absorption compound, and the non-resonant two-photon absorption recording material wherein the main chain of the non-resonant polymer two-photon absorption compound contains at least one member selected from polystyrene, polyacrylate, polymethacrylate-polyester, polyurethane, polyether and polyimide, and also provides an optical information recording medium having a recording layer containing the recording material.

Abstract: An organic electroluminescent element containing a light emitting material represented by the following general formula (1) and a host material represented by the general formula (H-1) in a light emitting layer. The organic electroluminescent element has low driving voltage, high luminous efficiency, and excellent durability. L represents O, NRC0, or CRC1RC2; RC0 to RC2 each represents a hydrogen atom or a substituent; RC3 to RC6 each represents a substituent; nC3 and nC6 each represents an integer of 0 to 3; nC4 and nC5 each represents an integer of 0 to 4; RH111 to RH118 each represents a hydrogen atom or a substituent; X represents any one of O, S, NRH119, CRH120RH121, and SiRH122RH123, and RH119 to RH123 each represents a substituent; the ring A represents a benzene ring; and the ring B represents a 5- or 6-membered ring.

Abstract: The present invention provides a non-resonant two-photon absorption recording material containing a non-resonant polymer two-photon absorption compound, and the non-resonant two-photon absorption recording material wherein the main chain of the non-resonant polymer two-photon absorption compound contains at least one member selected from polystyrene, polyacrylate, polymethacrylate, polyester, polyurethane, polyether and polyimide, and also provides an optical information recording medium having a recording layer containing the recording material.

Abstract: A two-photon absorption material that can, thanks to a compound of, for example, the following formula (6), perform non-resonant two-photon absorption by light in the region shorter than 700 nm with high sensitivity and has sufficient recording/reproduction properties, a two-photon absorption recording material, a recording medium and a two-photon absorption compound usable therein are provided.