Abstract: A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are formed to electrically connect the emitter electrode with the wiring pattern. The contact plugs are partially embedded in the emitter electrode in order to prevent of reduction of the current amplification factor of the bipolar transistor.

Abstract: In a semiconductor device including a large-diameter contact hole and a small-diameter contact hole which are formed to penetrate through an insulator film formed on a semiconductor substrate, the small-diameter contact hole is completely filled with a refractory conductive material, and the large-diameter contact hole has a sidewall formed of the refractory conductive material on a side surface of the large-diameter contact hole. The sidewall covers the side surface lower than a position which is lower than an upper end of the large-diameter contact hole by a predetermined distance.

Abstract: A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are formed to electrically connect the emitter electrode with the wiring pattern. The contact plugs are partially embedded in the emitter electrode in order to prevent of reduction of the current amplification factor of the bipolar transistor.

Abstract: A semiconductor device, such as a BICMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are formed to electrically connect the emitter electrode with the wiring pattern. The contact plugs are partially embedded in the emitter electrode in order to prevent of reduction of the current amplification factor of the bipolar transistor.

Abstract: A burner case (14) has at least one burner (11) therein and has an upper surface (12) formed with at least one opening (13). A flame produced by the burner (11) is introduced externally through the opening (13) for heating an object put on the upper surface (12) of the burner case (14). The upper surface (12) of the burner case (14) is formed along the opening (13) with an upwardly projecting louver (15). The louver acts as a windshield for the flame. For instance, the opening (13) is an annular opening, and the louver (15) is formed in inclination along the annular opening at an outer edge of the annular opening.

Abstract: A bi-MOS circuit is fabricated on first active regions assigned to the bipolar transistor and on second active regions assigned to the field effect transistors, and the field effect transistors are fabricated after said bipolar transistor, because a high-temperature heat treatment for an emitter diffusion destroys the impurity profiles of the source/drain regions of the field effect transistors, wherein a part of the field oxide layer between the second active regions is covered with an etching stopper layer before deposition of a thick silicon oxide layer in order to widely space the emitter region from the emitter electrode, even though the thick silicon oxide layer is removed from the field oxide layer between the second active regions for fabricating the field effect transistors, the etching stopper layer prevents the field oxide layer from the etchant, and the field oxide layer between the second active regions maintains the original thickness, thereby never allowing a parasitic MOS transistor to turn on

Abstract: There is provided a burner to be used for a portable gas cooking stove, including (a) a mixture gas pipe having an open end through which a gas mixture of combustible gas and air is exhausted, (b) a burner head connected to the mixture gas pipe in a hermetically sealed condition and having at least one opening at a surface thereof, the gas mixture blowing out through the opening, and (c) an igniter igniting the gas mixture blowing out through the opening of the burner head, the igniter generating a spark in a direction perpendicular to a flow of the gas mixture blowing out through the opening of the burner head. The burner makes it possible for the spark to make contact with the gas mixture flow in a larger contact area than that of a conventional burner. Accordingly, it is possible to stably ignite the gas mixture, even if the gas mixture has a great flow velocity.

Abstract: There is provided a portable gas cooking stove, including (a) a mixture gas pipe having an open end through which a mixture gas of combustible gas and air is exhausted, (b) a burner head connected to the mixture gas pipe in a hermetically sealed condition and having at least one opening at a surface thereof, the mixture gas blowing out through the opening, (c) an igniter igniting the mixture gas blowing out through the opening of the burner head, and (d) a windscreen surrounding the burner head and formed with a flame hole facing the opening of the burner head, the igniter being located outside the windscreen in facing relation to the flame hole. The portable gas cooking stove makes it no longer necessary to provide a net to an inner wall of a burner head, which was necessary to do in a conventional gas cooking stove, ensuring reduction in a period of time necessary for fabricating a flame hole and simplification in steps of fabricating a flame hole.

Abstract: There is provided a globe supporting structure that supports a globe of a gas lantern which burns combustible gas discharged from a gas cartridge containing the combustible gas by means of a burner head located inside the globe, including a ventilator positioned above the globe, a plurality of wires rotatably arranged on the ventilator, each of which rotates about the ventilator, and is shaped so as to be capable of reaching a bottom surface of the globe, and a globe supporting plate that supports the globe, and is provided with first arrangement which is detachably engagable with a portion of the wires reaching the bottom surface of the globe. In accordance with the globe supporting structure, the globe can be removed easily from the globe supporting plate without breaking the globe.

Abstract: In a method for manufacturing a BiMOS device, first and second semiconductor layers are formed on a semiconductor substrate, first and second field insulating layers are formed by using a LOCOS process on said first and second semiconductor layers, respectively. The first field insulating layer partitions a bipolar transistor area and a MOS transistor area, and the second field insulating layer is formed on a base-emitter junction region of the first semiconductor layer. Then, impurities are introduced via the second field insulating layer into the first semiconductor layer to form a base region therein. Then, an emitter opening is perforated in the second field insulating layer, and a polycrystalline silicon layer is formed on the second field insulating layer. Then, impurities of a first conductivity type are introduced into the polycrystalline silicon layer, and a heating operation is performed upon the polycrystalline silicon layer to form an emitter region.

Abstract: A side wall spacer and a spacer layer are concurrently formed from an insulating layer in such a manner that the side wall spacer is on one side surface of a gate electrode and the spacer layer covers a drain forming area and the other side surface of the gate electrode, and n-type dopant impurity is ion implanted into the drain forming area and a source forming area, thereby concurrently forming a shallow drain region and a deep source region on both sides of the gate electrode.

Abstract: There is provided a burner structure used for a portable gas cooking stove, including a mixing tube with an open end from which a mixture gas of a combustible gas and air is discharged, a burner head with a predetermined volume, an open bottom surface, and a top surface with at least one opening, an inner cup having a size that enables the inner cup to be housed in the burner head, and an open bottom surface, and a bottom plate with a through-hole through which the mixing tube can be inserted, covering the open bottom surface of the burner head, wherein the inner cup is installed inside the burner head in such a manner that an inner surface of the inner cup faces the mixing tube, and the mixing tube is installed on the bottom plate so that the open end is positioned higher than a bottom surface of the inner cup.

Abstract: In a method for manufacturing a BiMOS device, first and second semiconductor layers are formed on a semiconductor substrate, first and second field insulating layers are formed by using a LOCOS process on said first and second semiconductor layers, respectively. The first field insulating layer partitions a bipolar transistor area and a MOS transistor area, and the second field insulating layer is formed on a base-emitter junction region of the first semiconductor layer. Then, impurities are introduced via the second field insulating layer into the first semiconductor layer to form a base region therein. Then, an emitter opening is perforated in the second field insulating layer, and a polycrystalline silicon layer is formed on the second field insulating layer. Then, impurities of a first conductivity type are introduced into the polycrystalline silicon layer, and a heating operation is performed upon the polycrystalline silicon layer to form an emitter region.

Abstract: A semiconductor device according to the invention includes a first conductivity type of driver transistor, a second conductivity type of load transistor formed on the driver transistor and an insulation layer formed between the driver transistor and the load transistor. The insulation layer is provided thereon with a depression area in which a channel region, a gate insulation layer and a gate electrode of the load transistor are formed.

Abstract: A method for the preparation of semiconductor devices which comprises steps of forming a nitride film on a first conductivity type semiconductor substrate, selectively removing the nitride film, oxidation with the remaining nitride film as the mask to form insulation oxide films for element isolation on the semiconductor substrate, forming a second insulation film on the entire surface of the substrate, and implanting a second conductivity type impurity through the entire surface of the substrate to form second conductivity type channel stoppers under the insulation oxide films.