Abstract: A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.

Abstract: An image pick-up tube has a photoelectric conversion target including a transparent substrate, and a transparent electrode and a photoconductive layer formed on the transparent substrate. An electron beam is scanned on the photoelectric conversion target. A first electrode is formed on a beam scanning surface of the photoconductive layer so as to be segmented in stripe or grid with its electrode segments electrically connected to each other. A second electrode is formed on the first electrode through an insulating layer with its electrode segments electrically connected to each other. An insulating layer may be interposed between the first electrode and the photoconductive layer.

Abstract: An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.