Abstract: A semiconductor laser device and a beam receiving device are mounted on a lead. The beam receiving device receives a sub beam irradiated from the semiconductor laser device. At an edge of the lead, concave portions are provided for positioning with an optical part which receives a laser beam irradiated from a main irradiating surface provided at the front of the semiconductor laser device. The beam optical axis of the semiconductor laser device is situated at a position higher than the position of a beam receiving surface of the beam receiving device is situated. A transparent resin covering from the rear surface of the semiconductor laser device to the beam receiving surface of the beam receiving device and containing a dispersing agent, or a molding resin made of an ultraviolet hardened resin and containing the dispersing agent is provided.

Abstract: A semiconductor laser apparatus in which a laser emits light from a facet toward a photosensor having a light absorptive surface which is covered by a film having a reflectivity in the range of between about 60% to 90% to reflect light back to the laser with the remainder passing through to the light absorptive surface of the photosensor. The distance between the laser light emitting facet and the reflecting film is in the range of 50 to 150 .mu.m.