Patents by Inventor Hirohiko Hirasawa

Hirohiko Hirasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Toner for electrostatic-image development and toner cartridge containing the same therein
    Patent number: 9201342
    Abstract: The object of the invention is to provide a toner for electrostatic-image development which imparts excellent image quality and a toner cartridge employing the toner. The invention relates to a toner for electrostatic-image development, which satisfies the following requirements (1) and (2): (1) the toner has an average transporting property of 2.9 to 15.1 mg/sec; and (2) the product of the BET specific surface area (m2/g) and volume-average particle diameter (?m) of the toner is 7.7×10?6 to 11.0×10?6 (m3/g).
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: December 1, 2015
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventor: Hirohiko Hirasawa
  • TONER FOR ELECTROSTATIC-IMAGE DEVELOPMENT AND TONER CARTRIDGE CONTAINING THE SAME THEREIN
    Publication number: 20150050591
    Abstract: The object of the invention is to provide a toner for electrostatic-image development which imparts excellent image quality and a toner cartridge employing the toner. The invention relates to a toner for electrostatic-image development, which satisfies the following requirements (1) and (2): (1) the toner has an average transporting property of 2.9 to 15.1 mg/sec; and (2) the product of the BET specific surface area (m2/g) and volume-average particle diameter (?m) of the toner is 7.7×10?6 to 11.0×10?6 (m3/g).
    Type: Application
    Filed: September 29, 2014
    Publication date: February 19, 2015
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventor: Hirohiko Hirasawa
  • Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
    Patent number: 8299452
    Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: October 30, 2012
    Assignee: The Regents of the University of California
    Inventors: Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
    Publication number: 20120205620
    Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
    Type: Application
    Filed: February 27, 2012
    Publication date: August 16, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
    Patent number: 8148713
    Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: April 3, 2012
    Assignee: The Regents of the University of California
    Inventors: Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100308357
    Abstract: A light-emitting element (10) is provided with a thin-film crystal layer which includes a buffer layer (22), a first-conductivity-type semiconductor layer, an active structure (25) and a second-conductivity-type semiconductor layer. In the thin-film crystal layer, at least a part of the second-conductivity-type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin-film crystal layer.
    Type: Application
    Filed: October 29, 2008
    Publication date: December 9, 2010
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hideyoshi Horie, Hirohiko Hirasawa
  • METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
    Publication number: 20090250686
    Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
    Type: Application
    Filed: April 6, 2009
    Publication date: October 8, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura