Abstract: A reversible recording medium according to an embodiment of the present disclosure includes: a recording layer including a leuco pigment as a coloring compound; and a first barrier film that is provided on one surface and a side surface of the recording layer and suppresses mixing of at least one of water or oxygen.

Abstract: The laminate includes: a base material; an intermediate layer provided on the base material and having an accommodation part; a recording medium provided in the accommodation part; and an overlay layer provided on the intermediate layer. The accommodation part is provided in a part of a plane of the intermediate layer, and the accommodation part is a through hole penetrating in the thickness direction of the intermediate layer or a recess recessed in the thickness direction of the intermediate layer. The recording medium includes a color development layer containing: a coloring compound having an electron donating property; a developer having an electron accepting property; and a matrix resin. The base material, the intermediate layer, and the overlay layer contain the same type of resin material. The base material and the intermediate layer are bonded to each other by fusion, and the intermediate layer and the overlay layer are bonded to each other by fusion.

Abstract: A recording medium according to an embodiment of the present disclosure includes: a recording layer including a leuco dye as a coloring compound; a first barrier film that is provided on each of one surface and another surface opposed to the one surface of the recording layer, and suppresses intrusion of moisture, oxygen, or both; and a second barrier film having chemical resistance and provided on a side surface of the recording layer continuously at least from a peripheral part of the one surface to a peripheral part of the other surface of the recording layer.

Abstract: A reversible recording medium according to an embodiment of the present disclosure includes: a recording layer including a leuco pigment as a coloring compound; and a first barrier film that is provided on one surface and a side surface of the recording layer and suppresses mixing of at least one of water or oxygen.

Abstract: A method of forming a semiconductor thin film includes: a step of forming an amorphous semiconductor thin film over a transparent substrate; a step of forming a crystalline semiconductor thin film by irradiating the amorphous semiconductor thin film with laser light to provide heat treatment and thereby crystallizing the amorphous semiconductor thin film; and an inspection step of inspecting the crystalline semiconductor thin film. The inspection step includes a step of obtaining a transmission image of the crystalline semiconductor thin film by irradiating the crystalline semiconductor thin film with light from a rear side of the transparent substrate and taking an image, and a screening step of performing screening of the crystalline semiconductor thin film based on the obtained transmission image.

Abstract: A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.

Abstract: A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.

Abstract: A circuit substrate includes a substrate having a wiring formation surface formed in a planar shape; a primer resin layer formed on the wiring formation surface of the substrate and having a predetermined adhesive force with respect to the substrate; and a wiring layer formed on the primer resin layer, wherein the wiring layer is formed by removing a portion of the conductive ink, which contacts the wiring formation surface of the substrate coated so as to cover the primer resin layer by a removing unit, in which the adhesive force of a conductive ink with respect to the substrate is smaller than the adhesive force of the primer resin layer with respect to the substrate.

Abstract: A method of forming a semiconductor thin film includes: a step of forming an amorphous semiconductor thin film over a transparent substrate; a step of forming a crystalline semiconductor thin film by irradiating the amorphous semiconductor thin film with laser light to provide heat treatment and thereby crystallizing the amorphous semiconductor thin film; and an inspection step of inspecting the crystalline semiconductor thin film. The inspection step includes a step of obtaining a transmission image of the crystalline semiconductor thin film by irradiating the crystalline semiconductor thin film with light from a rear side of the transparent substrate and taking an image, and a screening step of performing screening of the crystalline semiconductor thin film based on the obtained transmission image.

Abstract: A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.

Abstract: A printed circuit board having a through-hole in a land is disclosed. A solder resist of a photo-curable solder resist is formed on the substrate surface of the printed circuit board and the through-hole is stopped with the same photo-curable solder resist as the solder resist layer. If a land on which a chip component is mounted co-exists with a land on which a discrete component is mounted, only the through-hole in the land on which the chip component is mounted is selectively stopped with the photo-curable solder resist. The solder resist layer and the photo-curable solder resist stopping the through-hole are formed by selective light exposure from both the front and reverse surfaces of the substrate.