Abstract: An optical element includes an optical crystal and an antireflection film coating the surface of the optical crystal. The antireflection film contains an organic compound that includes, as a structural unit, at least one of a compound containing a cyclic structure to which a fluorine atom is bound and a compound containing a cyclic olefin structure.

Abstract: The solid-state imaging apparatus (1) according to the present disclosure includes a semiconductor layer (51), a light shield wall (60b), and an insulation layer. The semiconductor layer (51) is provided with a plurality of photoelectric conversion units and a plurality of charge retention units that retain charge generated by the photoelectric conversion units (26). The light shield wall (60b) is provided inside a trench (51a) formed in a depth direction from a light-incident side between the photoelectric conversion units and the charge retention units (26) adjacent to each other in the semiconductor layer (51). The insulation layer is provided on a side of the semiconductor layer (51) opposite from the light-incident side, and having an opening (53a) that surrounds the trench (51a).

Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Abstract: Provided is an electro-optic probe for detecting an electromagnetic wave, including: an electro-optic crystal; and an optical fiber optically coupled to the electro-optic crystal, wherein a direction of a unique axis of the electro-optic crystal and a polarization direction of light from the optical fiber that enters the electro-optic crystal are set to be in line with each other, or wherein a direction of a unique axis of the electro-optic crystal and a unique polarization direction of the optical fiber are set to be in line with each other.

Abstract: [Problem to Be Solved] The present invention provides an optical element including a coating film in which the occurrence of cracks is prevented. [Solution] Provided is an optical element including: an optical crystal; and an antireflection film coating the surface of the optical crystal; in which optical element the antireflection film contains an organic compound.

Abstract: Excitation light of two wavelengths is incident to an optical crystal from a first face side, and a terahertz wave THzb is generated from a second face, and the excitation light that has passed through the optical crystal is reflected, made incident to the optical crystal from the second face side, and a terahertz wave THza is generated from the first face. Terahertz waves with similar characteristics to each other are thereby generated reliably in plural directions.

Abstract: An image forming apparatus includes: a density unevenness measurement mode processing portion that, in a density unevenness measurement process, detects density of a density unevenness measurement toner image, which has been formed in a rotational direction of the photoreceptor drum, multiple times in the rotational direction and captures in a memory portion all detected density information associating thereof with rotation phases of the photoreceptor drum; and an image quality adjustment processing portion that, in an image quality adjustment mode, detects density of an image quality adjustment toner image, which has been formed at any position in the rotational direction of the photoreceptor drum, in the rotational direction and corrects detected density information based on density information associated with a rotation phase matching a rotation phase where density of the image quality adjustment toner image has been detected among said all density information having been captured in the memory portion by

Abstract: Provided is an electro-optic probe for detecting an electromagnetic wave, including: an electro-optic crystal; and an optical fiber optically coupled to the electro-optic crystal, wherein a direction of a unique axis of the electro-optic crystal and a polarization direction of light from the optical fiber that enters the electro-optic crystal are set to be in line with each other, or wherein a direction of a unique axis of the electro-optic crystal and a unique polarization direction of the optical fiber are set to be in line with each other.

Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Abstract: An image forming apparatus includes: a density unevenness measurement mode processing portion that, in a density unevenness measurement process, detects density of a density unevenness measurement toner image, which has been formed in a rotational direction of the photoreceptor drum, multiple times in the rotational direction and captures in a memory portion all detected density information associating thereof with rotation phases of the photoreceptor drum; and an image quality adjustment processing portion that, in an image quality adjustment mode, detects density of an image quality adjustment toner image, which has been formed at any position in the rotational direction of the photoreceptor drum, in the rotational direction and corrects detected density information based on density information associated with a rotation phase matching a rotation phase where density of the image quality adjustment toner image has been detected among said all density information having been captured in the memory portion by

Abstract: There is provided a terahertz wave measuring device including (1) a terahertz wave generation element that generates a terahertz wave by difference frequency generation based on excitation light that is incident to the terahertz wave generation element, the excitation light including a plurality of different wavelength components and being condensed so as to have a beam diameter of a predetermined size, (2) a structural body through which the terahertz wave is transmitted; and (3) a detector that detects an intensity of the terahertz wave that has been transmitted through the structural body, wherein the structural body includes a sample holder of a predetermined width that holds a sample, and the structural body is in close contact with or is joined to the terahertz wave generation element.

Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Abstract: There is provided a terahertz wave measuring device including (1) a terahertz wave generation element that generates a terahertz wave by difference frequency generation based on excitation light that is incident to the terahertz wave generation element, the excitation light including a plurality of different wavelength components and being condensed so as to have a beam diameter of a predetermined size, (2) a structural body through which the terahertz wave is transmitted; and (3) a detector that detects an intensity of the terahertz wave that has been transmitted through the structural body, wherein the structural body includes a sample holder of a predetermined width that holds a sample, and the structural body is in close contact with or is joined to the terahertz wave generation element.

Abstract: Excitation light of two wavelengths is incident to an optical crystal from a first face side, and a terahertz wave THzb is generated from a second face, and the excitation light that has passed through the optical crystal is reflected, made incident to the optical crystal from the second face side, and a terahertz wave THza is generated from the first face. Terahertz waves with similar characteristics to each other are thereby generated reliably in plural directions.

Abstract: A device monitoring system monitors a device by changing the frequency of monitoring according to the status of a device to be monitored. A device monitoring system includes a memory that stores a status of a plurality of monitoring items for each device to be monitored; and a processor detects a change in the status of monitoring items stored in the memory, and to define a status monitoring frequency of acquisition of the status of monitoring items from the device to be monitored, according to the detected change in status, and acquires the status of monitoring items from the device to be monitored according to the status monitoring frequency, and to store the acquired status of the monitoring items.

Abstract: An optical crystal includes a first non-linear optical crystal that generates terahertz waves corresponding to a difference frequency component in incident light with two different wavelengths by a difference frequency generation, and a second non-linear optical crystal that generates terahertz waves corresponding to a difference frequency component in incident light with two different wavelengths by a difference frequency generation, the second non-linear optical crystal being different in material from the first non-linear optical crystal, and the first non-linear optical crystal and the second non-linear optical crystal being disposed in contact or close together.

Abstract: A terahertz wave characteristic measurement method comprises irradiating terahertz waves at a region in which a thickness of a solution is in the range from 10 ?m to 100 ?m such that a propagation direction of the terahertz waves is in a thickness direction of the solution, the solution containing at least one type of target material to be measured, and measuring at least one of a spectral characteristic and an intensity at a particular frequency or a particular wavelength of the terahertz waves that are one of transmitted through the region and reflected from the region.

Abstract: An optical crystal includes a first non-linear optical crystal that generates terahertz waves corresponding to a difference frequency component in incident light with two different wavelengths by a difference frequency generation, and a second non-linear optical crystal that generates terahertz waves corresponding to a difference frequency component in incident light with two different wavelengths by a difference frequency generation, the second non-linear optical crystal being different in material from the first non-linear optical crystal, and the first non-linear optical crystal and the second non-linear optical crystal being disposed in contact or close together.

Abstract: The present invention provides a computer configuration display apparatus, a computer configuration display method, and a computer configuration display program that can contribute to reduction of a burden on a system administrator who performs management concerning physical components and logical components of a computer.