Abstract: Provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. Also provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed comprising one or more concave portions on the target surface region, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. An inexpensive, small-capacity power supply unit can be used by minimizing the electrical variations in the sputtering circuit as much as possible throughout the lifespan of the target through self sputtering or high power sputtering.

Abstract: Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.

Abstract: An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 ?m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 ?m when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Abstract: Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 ?m, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Abstract: Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

Abstract: Provided is a first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wt ppm or less of Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wt ppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wt ppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and the resistivity of the target material is 2.2 ??cm or more. This target enables formation of an interconnection material of a semiconductor device, particularly a uniform seed layer stable during copper electroplating and is excellent in sputtering deposition characteristics. A method for manufacturing such a target is also disclosed.

Abstract: A sputtering target having a sprayed coating at least on the side face thereof and producing few particles. The deposit produced on the side face of the sputtering target is prevented from separating and flying.

Abstract: A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

Abstract: Provided is high purity nickel or nickel alloy target for magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior in plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

Abstract: The present invention relates to a diffusion bonding target assembly of a high purity cobalt target and a copper alloy backing plate diffusion bonded with an aluminum or aluminum alloy having a thickness of 0.5 mm or more as the insert material. Provided is a diffusion bonding target assembly of a high-purity cobalt target and a copper alloy backing plate capable of effectively sputtering a high purity cobalt ferromagnetic target and which does not generate warping or peeling upon diffusion bonding even under severe conditions such as bonding with the backing plate and high power sputtering, and the manufacturing method thereof.

Abstract: A tantalum or tungsten target-backing plate assembly which comprises a tantalum or tungsten target and a copper alloy backing plate that are subject to diffusion bonding via an aluminum- or aluminum alloy-sheet insert material at least 0.5 mm thick, and which is provided with diffusion bonded interfaces between the respective materials, wherein the assembly suffers only a small deformation after diffusion bonding and is free from separation between the target and the backing plate or from cracking even when the target material and the backing plate differ greatly in thermal expansion, and can survive high power sputtering; and a production method therefor.

Abstract: The present invention relates to a non-brittle silicide target for forming a gate oxide film made of MSi0.8-1.2 (M: Zr, Hf), and provides a non-brittle silicide target suitable for forming a ZrO2.SiO2 film or HfO2.SiO2 film that can be used as a high dielectric gate insulating film having properties to substitute an SiO2 film.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 &mgr;m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of said phosphorous copper anode 5 to 1500 &mgr;m when the anode current density during electrolysis is less than 3 A/dm2. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: A tantalum or tungsten target-backing plate assembly which comprises a tantalum or tungsten target and a copper alloy backing plate that are subject to diffusion bonding via an aluminum- or aluminum alloy-sheet insert material at least 0.5 mm thick, and which is provided with diffusion bonded interfaces between the respective materials, wherein the assembly suffers only a small deformation after diffusion bonding and is free from separation between the target and the backing plate or from cracking even when the target material and the backing plate differ greatly in thermal expansion, and can survive high power sputtering; and a production method therefor.

Abstract: A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

Abstract: A tungsten powder having a powder specific surface of 0.4 m2/g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 &mgr;m or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.

Abstract: The present invention relates to a non-brittle silicide target for forming a gate oxide film made of MSi0.8-1.2 (M: Zr, Hf), and provides a non-brittle silicide target suitable for forming a ZrO2. SiO2 film or HfO2. SiO2 film that can be used as a high dielectric gate insulating film having properties to substitute an SiO2 film.

Abstract: The surface roughness of a sputtering target is controlled and the amount of residual contaminants, the hydrogen content, and the thickness of a surface damage layer are reduced, in order to homogenize the thickness of a film formed on a substrate by sputtering and prevent and suppress nodule production to reduce particle production during sputtering. A sputtering target with the surface roughness (Ra) not more than 1.0 .mu.m, the total amount of contaminants, metal elements with a high melting point other than the major component and alloy components and Si, Al, Co, Ni, and B, not more that 500 ppm, the hydrogen content of the surface not more than 50 ppm, and the thickness of a surface damage layer not more than 50 .mu.m is provided, which is manufactured by precision machining, preferably, with the use of a diamond turning tool.

Abstract: A high-strength, high-conductivity copper alloy comprises, all by weight, from 0.8 to 4.0% of Sn, from more than 0.01 to 0.4% of P, from 0.05 to 1.0% of Ni, from 0.05 to 1.0% of one, two or more elements selected from Al, Hf, Be, Mo, Zn, Te, Pb, Co, Zr, and Nb, and the remainder of Cu and inevitable impurities. The impurities include not more than 0.0020% of oxygen.