Abstract: The apparatus is attached to a thermal analyzer including a pair of sample containers and a heating furnace having a window or an opening through which at least the measurement sample can be observed, and includes an attachment unit, a light source, a polarizer constituting a polarizing filter that polarizes irradiation light emitted from the light source, a camera, a half mirror, a rotation mechanism and an analyzer constituting a polarizing filter configured to polarize reflected light through the half mirror and to introduce the resulting polarized light of the reflected light into the camera, in which the polarized light irradiates the sample after passing through the window or opening and then reflects from the sample wherein the analyzer, the half mirror, and the light source are fixed to a fixing member and the rotation mechanism rotates the fixing member in a polarization direction of the analyzer.

Abstract: A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.

Abstract: A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.

Abstract: An apparatus and a method are provided for selectively and rapidly applying heat to a nanoscale environment in a controlled manner. The technology utilizes laser irradiation of a solid state material to heat a nanoscale point of interest by an optothermal effect. The technology can be used to the tip of an atomic force microscope, a spot on a flat surface, or a nanopore, or molecules in their vicinity. The apparatus and method are capable of rapidly scanning the temperature of a nanoscale object such as a molecule or biomolecular complex and to interrogate properties of the object at high throughput. The methods can be used in nanofabrication processes or to drive single molecule chemistry.

Abstract: An apparatus and a method are provided for selectively and rapidly applying heat to a nanoscale environment in a controlled manner. The technology utilizes laser irradiation of a solid state material to heat a nanoscale point of interest by an optothermal effect. The technology can be used to the tip of an atomic force microscope, a spot on a flat surface, or a nanopore, or molecules in their vicinity. The apparatus and method are capable of rapidly scanning the temperature of a nanoscale object such as a molecule or biomolecular complex and to interrogate properties of the object at high throughput. The methods can be used in nanofabrication processes or to drive single molecule chemistry.

Abstract: A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.