Patents by Inventor Hiroie MATSUMOTO
Hiroie MATSUMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11710644Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to ?20° C. or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).Type: GrantFiled: September 29, 2021Date of Patent: July 25, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Takahiro Yokoyama, Taihei Matsuhashi, Masanori Hosoya, Hiroie Matsumoto
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Publication number: 20220102159Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to ?20° C. or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).Type: ApplicationFiled: September 29, 2021Publication date: March 31, 2022Applicant: Tokyo Electron LimitedInventors: Takahiro YOKOYAMA, Taihei MATSUHASHI, Masanori HOSOYA, Hiroie MATSUMOTO
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Patent number: 9818610Abstract: A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.Type: GrantFiled: March 14, 2017Date of Patent: November 14, 2017Assignee: Tokyo Electron LimitedInventors: Hiroie Matsumoto, Andrew W. Metz, Yannick Feurprier, Katie Lutker-Lee
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Publication number: 20170263443Abstract: A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.Type: ApplicationFiled: March 14, 2017Publication date: September 14, 2017Inventors: Hiroie Matsumoto, Andrew W. Metz, Yannick Feurprier, Katie Lutker-Lee
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Patent number: 9607834Abstract: A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer.Type: GrantFiled: April 1, 2016Date of Patent: March 28, 2017Assignee: Tokyo Electron LimitedInventors: Hiroie Matsumoto, Andrew W. Metz, Yannick Feurprier, Katie Lutker-Lee
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Publication number: 20160293405Abstract: A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer.Type: ApplicationFiled: April 1, 2016Publication date: October 6, 2016Inventors: Hiroie Matsumoto, Andrew W. Metz, Yannick Feurprier, Katie Lutker-Lee
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Publication number: 20150287618Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.Type: ApplicationFiled: June 23, 2015Publication date: October 8, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroie MATSUMOTO, Kazuto OGAWA
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Patent number: 9099285Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.Type: GrantFiled: October 28, 2013Date of Patent: August 4, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroie Matsumoto, Kazuto Ogawa
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Publication number: 20140120732Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.Type: ApplicationFiled: October 28, 2013Publication date: May 1, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroie MATSUMOTO, Kazuto OGAWA