Patents by Inventor Hirokata Ohta

Hirokata Ohta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate type field effect transistor
    Patent number: 4821084
    Abstract: Extension directions of source electrode layer and a drain electrode are parallel to rows or columns of an array of alternately arranged source regions and drain regions, thereby forming widths of source and drain electrode layers wider than those of a conventional transistor to obtain a large mutual conductance.
    Type: Grant
    Filed: January 21, 1987
    Date of Patent: April 11, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masanori Kinugasa, Fuminari Tanaka, Hiroshi Shigehara, Hirokata Ohta