Abstract: Provided is a display method of displaying, on a display device, video of video data where luminance of video is defined by a first EOTF indicating a correlation of HDR luminance and code values. The method includes: acquiring the video data; performing, regarding each of multiple pixels making up the video in the acquired video data, first determining of determining whether luminance of that pixel exceeds a first predetermined luminance; performing, regarding each of the multiple pixels, dual tone mapping where luminance of that pixel is reduced by a different format in a case of the luminance of the pixel being found to exceed the first predetermined luminance from the first determining, and a case of the luminance of the pixel being found to be equal to or lower than the first predetermined luminance; and displaying the video on the display device using the results of the dual tone mapping.

Abstract: A display device is a display device having a display that displays an image based on a received image signal. This display device includes: a memory that stores maximum luminance information regarding maximum luminance that the display can display; a determiner that determines whether the image signal is an HDR image signal specified by relative luminance; a first converter that, when the determiner determines that the image signal is the HDR image signal specified by the relative luminance, subjects luminance information obtained from the image signal to nonlinear conversion based on a luminance characteristic of the display; and a second converter that converts the luminance information that has been subjected to the nonlinear conversion by the first converter such that the display displays an image at increased luminance within a luminance range determined in accordance with the maximum luminance information.

Abstract: A display device includes a display panel that displays an image, a backlight that includes a light emitting surface that emits light toward a rear surface of the display panel, the light emitting surface being divided into a plurality of light emitting regions, and a controller that independently determines luminance of the backlight for each of the plurality of light emitting regions according to each luminance of a plurality of image regions in the image respectively corresponding to the plurality of light emitting regions. When the backlight satisfies a predetermined condition, while comparing each determined luminance of the plurality of light emitting regions with a threshold, the controller decreases luminance of a light emitting region having luminance greater than the threshold, and maintains luminance of a light emitting region having luminance not greater than the threshold.

Abstract: Provided is a display method of displaying, on a display device, video of video data where luminance of video is defined by a first EOTF indicating a correlation of HDR luminance and code values. The method includes: acquiring the video data; performing, regarding each of multiple pixels making up the video in the acquired video data, first determining of determining whether luminance of that pixel exceeds a first predetermined luminance; performing, regarding each of the multiple pixels, dual tone mapping where luminance of that pixel is reduced by a different format in a case of the luminance of the pixel being found to exceed the first predetermined luminance from the first determining, and a case of the luminance of the pixel being found to be equal to or lower than the first predetermined luminance; and displaying the video on the display device using the results of the dual tone mapping.

Abstract: It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 ?m , and a diameter of the through hole is 20 to 100 ?m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 ?m , respectively.

Abstract: A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 ?m and a central part with an average grain size of 10 to 50 ?m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Abstract: A method for producing an electrostatic chuck 10 includes the steps of (a) pouring a ceramic slurry containing a ceramic powder, a solvent, a dispersant, and a gelling agent into a first molding die 31 in which an electrostatic electrode precursor 24 is removably attached to an inner surface of the first molding die 31, gelatinizing the ceramic slurry by causing a chemical reaction of the gelling agent, and then removing the first molding die 31 to prepare an embedded-electrode-containing ceramic molded body 41X in which the electrostatic electrode precursor 24 is embedded in a first ceramic molded body 41; (b) preparing a second ceramic molded body 42; and (c) preparing a stacked calcined body 50 using the embedded-electrode-containing ceramic molded body 41X and the second ceramic molded body 42, and conducting hot-press firing of the stacked calcined body 50.

Abstract: It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 ?m, and a diameter of the through hole is 20 to 100 ?m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 ?m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 ?m.

Abstract: It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Abstract: A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing insulation reliability and high-humidity reliability of the substrate is provided.

Abstract: A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing an insulation reliability and high-humidity reliability of the substrate is provided.

Abstract: In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.

Abstract: An alumina purity of translucent polycrystalline alumina forming a handle substrate is 99.9 percent or higher, and a porosity of the polycrystalline alumina is 0.01% or more and 0.1% or less. A number of pores, each having a size of 0.5 ?m or larger and included in a surface region on a side of a bonding face of the handle substrate is 0.5 times or less of a number of pores, each having a size of 0.1 ?m or larger and 0.3 ?m or smaller and contained in the surface region.

Abstract: It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Abstract: It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 ?m, and a diameter of the through hole is 20 to 100 ?m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 ?m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 ?m.

Abstract: A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 ?m and a central part with an average grain size of 10 to 50 ?m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Abstract: In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.

Abstract: It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 ?m , and a diameter of the through hole is 20 to 100 ?m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 ?m , respectively.

Abstract: A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing an insulation reliability and high-humidity reliability of the substrate is provided.

Abstract: A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing insulation reliability and high-humidity reliability of the substrate is provided.