Abstract: An H-section steel has a predetermined chemical composition in which a thickness of a flange is 100 mm to 150 mm, at a strength evaluation position an area fraction of bainite in a steel structure is 80% or more, yield strength or 0.2% proof strength is 450 MPa or more, tensile strength is 550 MPa or more and 680 MPa or less, at a toughness evaluation position an average austenite grain size in the steel structure is 150 ?m or less, and (Mg, Mn)S having a particle size of 0.005 ?m to 0.5 ?m is included at a density of 1.0×105 pieces/mm2 to 1.0×107 pieces/mm2.

Abstract: Data is transferred between a DECT terminal and an LTE base station. A base unit includes a DECT communication unit and an LTE communication unit, the DECT communication unit performing DECT communication with a DECT terminal, and the LTE communication unit transmitting and receiving data with the DECT communication unit and performing LTE communication with an LTE carrier gateway through an LTE base station. The DECT communication unit transmits a connection verification request to the LTE communication unit in order to verify a connection state of an LTE link with the LTE carrier gateway. The LTE communication unit transmits a connection verification response to the DECT communication unit in response to the connection verification request in a case where an LTE link is connected.

Abstract: A settlement processing apparatus as an information processing apparatus includes a first substrate, a second substrate which is provided so as to face the first substrate, a frame member which supports the first substrate and the second substrate on the inner surface side of a wall surface portion surrounding the external forms of the first substrate and the second substrate, and a tamper detection circuit which is disposed within a secure region surrounded by the first substrate, the second substrate, and the frame member and detects the release of blocking of the secure region. An information processing apparatus which is small, secures the degree of freedom in design, and has high tamper resistance is provided.

Abstract: An H-section steel has a predetermined chemical composition, in which a Mg-containing oxide having an equivalent circle diameter of 0.005 ?m to 0.5 ?m is contained at a total number density of 100 pieces/mm2 to 5000 pieces/mm2, a thickness of a flange is 100 mm to 150 mm, at a strength evaluation portion which is at a ? position from a surface of the flange in a length direction and at a ¼ position from the surface in a thickness direction, a fraction of bainite in a steel structure is 80% or more, and the average prior austenite grain size is 70 ?m or more, and at a toughness evaluation portion which is at a ½ position from the surface of the flange in the length direction and at a ¾ position from the surface of the flange in the thickness direction, the average prior austenite grain size in a steel structure is 200 ?m or less.

Abstract: Data is transferred between a DECT terminal and an LTE base station. A base unit includes a DECT communication unit and an LTE communication unit, the DECT communication unit performing DECT communication with a DECT terminal, and the LTE communication unit transmitting and receiving data with the DECT communication unit and performing LTE communication with an LTE carrier gateway through an LTE base station. The DECT communication unit, in a case where an adjacent frequency bandwidth that is adjacent to one of DECT communication sub-bands is used in the LTE communication, controls the DECT communication to be performed by using the other sub-band.

Abstract: Data is transferred between a DECT terminal and an LTE base station. A base unit includes a DECT communication unit and an LTE communication unit, the DECT communication unit performing DECT communication with a DECT terminal, and the LTE communication unit transmitting and receiving data with the DECT communication unit and performing LTE communication with an LTE carrier gateway through an LTE base station. The DECT communication unit transmits a connection verification request to the LTE communication unit in order to verify a connection state of an LTE link with the LTE carrier gateway. The LTE communication unit transmits a connection verification response to the DECT communication unit in response to the connection verification request in a case where an LTE link is connected.

Abstract: An H-section steel has a predetermined chemical composition in which Ti oxides having a grain size of 0.01 ?m to 3.0 ?m are included at a density of 30 pieces/mm2 or more, a thickness of a flange is 100 mm to 150 mm, an area fraction of bainite at a ? position from a surface of the flange in a length direction and at a ¼ position from the surface thereof in a thickness direction is 80% or more, a yield strength or 0.2% proof stress is 450 MPa or more, and a tensile strength is 550 MPa or more, a Charpy absorbed energy at 21° C. at a ½ position from the surface of the flange in the length direction and at a ¾ position from the surface thereof in the thickness direction is 100 J or more, and an average austenite grain size is 50 ?m to 200 ?m.

Abstract: There is provided an H-section steel in which a number density of oxide particles having an equivalent circle diameter of 0.005 ?m to 2.0 ?m per unit area is 100 pieces/mm2 to 5000 pieces/mm2, the oxide particles includes Ca, Al, and O as a composition, the amount of Ca is 5% or more, the amount of Al is 5% or more, and a total amount of Ca and Al is 50% or more by mass ratio excluding O in the oxide particles, a thickness of the flange is 100 mm to 150 mm, a bainite fraction in a metallographic structure of the flange is 80% or more at a strength evaluation position, and an average prior austenite grain size in the metallographic structure of the flange is 200 ?m or less at a toughness evaluation position.

Abstract: An H-section steel has a predetermined chemical composition in which a thickness of a flange is 100 mm to 150 mm, at a strength evaluation position an area fraction of bainite in a steel structure is 80% or more, yield strength or 0.2% proof strength is 450 MPa or more, tensile strength is 550 MPa or more and 680 MPa or less, at a toughness evaluation position an average austenite grain size in the steel structure is 150 ?m or less, and (Mg, Mn)S having a particle size of 0.005 ?m to 0.5 ?m is included at a density of 1.0×105 pieces/mm2 to 1.0×107 pieces/mm2.

Abstract: A settlement processing apparatus as an information processing apparatus includes a first substrate, a second substrate which is provided so as to face the first substrate, a frame member which supports the first substrate and the second substrate on the inner surface side of a wall surface portion surrounding the external forms of the first substrate and the second substrate, and a tamper detection circuit which is disposed within a secure region surrounded by the first substrate, the second substrate, and the frame member and detects the release of blocking of the secure region. An information processing apparatus which is small, secures the degree of freedom in design, and has high tamper resistance is provided.

Abstract: There is provided an H-section steel in which a number density of oxide particles having an equivalent circle diameter of 0.005 ?m to 2.0 ?m per unit area is 100 pieces/mm2 to 5000 pieces/mm2, the oxide particles includes Ca, Al, and O as a composition, the amount of Ca is 5% or more, the amount of Al is 5% or more, and a total amount of Ca and Al is 50% or more by mass ratio excluding O in the oxide particles, a thickness of the flange is 100 mm to 150 mm, a bainite fraction in a metallographic structure of the flange is 80% or more at a strength evaluation position, and an average prior austesiite grain size in the metallographic structure of the flange is 200 ?m or less at a toughness evaluation position.

Abstract: A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.

Abstract: An information processing apparatus includes a transmission unit transmitting a command of a second operating system to the second operating system when receiving the command via a communication path which communicates under a control based on a first operating system, an extraction unit extracting data for the second operating system by analyzing the command transmitted from the transmission unit, and a writing unit writing the data extracted by the extraction unit as data constituting file system metadata of the second operating system.

Abstract: A steel material superior in high temperature characteristics and toughness is provided, that is, a steel material containing, by mass %, C: 0.005% to 0.03%, Si: 0.05% to 0.40%, Mn: 0.40% to 1.70%, Nb: 0.02% to 0.25%, Ti: 0.005% to 0.025%, N: 0.0008% to 0.0045%, B: 0.0003% to 0.0030%, restricting P: 0.030% or less, S: 0.020% or less, Al: 0.03% or less, and having a balance of Fe and unavoidable impurities, where the contents of C and Nb satisfy C—Nb/7.74?0.02 and Ti-based oxides of a grain size of 0.05 to 10 ?m are present in a density of 30 to 300/mm2.

Abstract: An IC chip, an information processing apparatus, a software module control method, an information processing system, an information processing method, and a program for allowing a plurality of software modules to ensure their respective security when operating are provided. An information processing system is provided to include a reader/writer and a portable communication terminal accessed by the reader/writer through near-field communication. In the portable communication terminal, a memory access management module stores a map regarding a plurality of software modules J and F for handling information exchanged in accordance with different noncontact communication principles while managing the software modules J and F based on the map. Another software module A performs mapping of the map for permitting or inhibiting the operations of the plurality of software modules.

Abstract: This H-beam steel has a composition including C, Si, Mn, Cu, Ni, V, Al, Ti, B, N, and O, and further including at least one of Mo and Nb, in which Ceq obtained in Equation 1 described below falls in a range of 0.37 to 0.50, the thickness of a flange falls in a range of 100 to 150 mm, and the area fraction of bainite at a depth of one quarter of the thickness of the flange from the external surface of the flange is 60% or more. Ceq=C+Mn/6+(Mo+V)/5+(Ni+Cu)/15 ??Equation 1, where C, Mn, Mo, V, Ni, and Cu represent the amount of each element contained.

Abstract: A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.

Abstract: An IC chip, an information processing apparatus, a software module control method, an information processing system, an information processing method, and a program for ensuring security before booting a software module reliably are provided. A reader/writer and a mobile phone terminal to be accessed by the reader/writer through proximity communication are provided. In the mobile phone terminal, a first software module transmits commands to second and third software modules. The first software module manages states of the second and third software modules. If during boot-up of the third software module, the processing of the second software module is started and completed, then the first software module resumes the boot-up of the third software module.

Abstract: Provided is an information processing apparatus including a communication unit for communication with an external apparatus, an operating system running unit for running first and second operating systems, the first for communication via a first communication path under a first communication protocol, and the second for communication via a second communication path under a second communication protocol. The apparatus includes a storage including first and second data areas for the operating systems, and a shared area for both operating systems. A first encryption key is stored in the first area for first protocol communication. The first operating system encrypts the communication via the first path by the first key, acquires, from the external apparatus via the first path, a second encryption key for second protocol communication, and stores the second key into the shared area. The second operating system transfers the second key to the second data area.

Abstract: The present invention provides a high strength thick steel material excellent in toughness and weldability reduced in amount of C and amount of N, containing suitable amounts of Si, Mn, Nb, Ti, B, and O, having contents of C and Nb satisfying C—Nb/7.74?0.004, having a density of Ti-containing oxides of a particle size of 0.05 to 10 ?m of 30 to 300/mm2, and having a density of Ti-containing oxides of a particle size over 10 ?m of 10/mm2 or less, produced by treating steel by preliminary deoxidation to adjust the dissolved oxygen to 0.005 to 0.015 mass %, then adding Ti and, furthermore, vacuum degassing the steel for 30 minutes or more, smelting it, then continuously casting it to produce a steel slab or billet, heating the steel slab or billet to 1100 to 1350° C., hot rolling the slab or billet to a thickness of 40 to 150 mm, then cooling it.