Abstract: Provided is a robot equipped with two joint parts attached to an end of an arm in a coupled state. For example, in a joint part of a robot, a motor and a reduction gear are housed in a case, and an output-side member having a flange is fixed to the output shaft of the reduction gear. An opening that opens in the direction orthogonal to the axial direction of the output shaft of the reduction gear is formed in the case. A planar attachment face orthogonal to the opening direction of the opening is formed in the opening. The robot is provided with a plurality of biaxial joint units comprising two joint parts. In the robot, the attachment face of the case of one joint part constituting a biaxial joint unit is fixed to the flange of the other joint part either directly or via a coupling member.

Abstract: An electrically driven vehicle management device is configured to acquire vehicle inherent information that can be used in identifying an electrically driven vehicle when a charging cable attachable to and detachable from the electrically driven vehicle is connected to the electrically driven vehicle, and determine, based on the acquired vehicle inherent information, a coping operation to be performed in relation to the electrically driven vehicle to which the charging cable is connected.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: An oil cooler includes flat tubes layered together with a clearance, wherein cooling water flows through the clearance. Each flat tube includes a first plate, a second plate, and a fin plate held between the first plate and the second plate. The first plate is recessed to form a fin plate accommodation portion accommodating the fin plate, wherein a thin portion is formed outside of the fin plate accommodation portion in a longitudinal direction of the flat tube. An oil port is provided at the thin portion. Each flat tube includes a guide wall at a lateral periphery thereof, wherein the guide wall faces the oil port in a width direction, and projects in a layering direction. The guide wall, the thin portion, and a lateral wall of the oil port form a nozzle portion to guide cooling water in the longitudinal direction.

Abstract: An evaluation system includes: an acquisition unit that acquires an image acquired by imaging an exterior of a vehicle; and an evaluation unit that derives and assigns an evaluation point for evaluating social credibility of a vehicle occupant of the vehicle on the basis of the image acquired by the acquisition unit.

Abstract: A prediction device includes: an acquirer configured to acquire a captured image of a scene of a section in a town and released information representing a value for the section; and a deriver configured to derive a public safety index representing a public safety state of the section in the future by inputting a result of analyzing the image and the released information to a prediction model.

Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

Abstract: An alumina porous body made up by binding aggregate alumina particles to each other, the aggregate alumina particles being bound to each other by a compound comprising yttrium silicate synthesized from mullite and Y2O3; and a two-layer structure ceramic porous body with an inorganic porous film formed on the alumina porous body.

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

Abstract: In a method of obtaining an angle of each joint of a 6-axis vertical articulated robot when a position and a posture of an end effector attached on a sixth axis are given, a predetermined amount of offset exists between a sixth axis and a fourth axis, and the method includes sequentially determining a point of interest, which is a point on a circumference of a circle having the predetermined amount as a radius, around a first intersection point, on a plane which includes the first intersection point which is an intersection point of the sixth axis and the fifth axis and the plane which is orthogonal to the sixth axis, calculating a second intersection point, which is an intersection point of the fourth axis and the third axis, when it is assumed that the point of interest is an intersection point of the fifth axis and the fourth axis, calculating an inner product value of a first vector directed from the calculated second intersection point to the point of interest and a second vector directed from the point

Abstract: An internal combustion engine, includes: a cylinder block; a crankshaft rotatably supported in the cylinder block; an oil pan fastened to a lower end portion of the cylinder block; a chain case fastened to one end wall of the cylinder block in an axial direction of the crankshaft; a belt wound around a crank pulley provided on an end portion of the crankshaft protruding from the chain case and an accessory pulley provided on an engine accessory; and a tensioner contacting a back surface of the belt and applying a tension to the belt, wherein the tensioner includes multiple fastening portions, such that one of the fastening portions is fastened to at least one of the cylinder block and the chain case, and another one of the fastening portions is fastened to the oil pan.

Abstract: A base unit includes a support to support a motor, a bottom plate, and a wall. The bottom plate extends radially outward from the support. The wall extends upward from an outer periphery of the bottom plate, and includes a rectangular opening in planar view. Surfaces of the bottom plate and the wall include a cover surface covered with an electrodeposition coating film and an exposed surface in which a material of the base unit is exposed from the electrodeposition coating film. At least an upper end surface of the wall and a partial region of an inside wall surface of the wall continuous with the upper end surface are each the exposed surface.

Abstract: A ceramic porous body has an alumina porous body made up by binding aggregate alumina particles to each other, the aggregate alumina particles being bound to each other by a compound including gadolinium silicate, lanthanum silicate or yttrium silicate synthesized from a silicate mineral and at least one rare-earth oxide selected from Gd2O3, La2O3, and Y2O3, and an inorganic porous film formed on the alumina porous body.

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

Abstract: A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

Abstract: An industrial robot may include multiple motors structured to rotate multiple arm units; multiple motor drivers to drive multiple motors; a power source to supply power to the multiple motor drivers; a charge-discharge unit connected to the multiple motor drivers; a control execution unit to control the multiple motor drivers; an elevation motor to elevate the arm, an elevation motor driver to drive the elevation motor; a first brake to stop the elevation motor; and a second brake to stop the elevation motor. When the industrial robot makes an emergency stop, the supplied power is turned off and control execution unit stops the multiple motors while controlling the multiple motor drivers by using the power supplied from the charge-discharge unit. The control execution unit controls at the time of said emergency stop, operates the first brake and then operates the second brake to stop the elevation motor.

Abstract: A motor control device may include a position command output means, a first subtraction means that calculates and outputs a position deviation, a position control means, a second subtraction means that calculates and outputs a position deviation, a speed control means that outputs a torque command, a limiter limits the level of the torque command, a motor drive means, and a voltage fluctuation detection means. When the voltage fluctuation detection means detects that the voltage of said power source has dropped below a predetermined reference level, either the position command output means varies the position command so as to reduce the rotational speed of the motor and/or said position control means limits said speed command to be output.

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.