Abstract: A lash adjuster includes a body, a plunger inserted into the body and having a bottom wall with a valve hole and a peripheral wall having an oil passage hole, and a partitioning member. The partitioning member is inserted into the plunger and has an oil passage end located above the oil passage hole in an inserted state. The partitioning member has a recess defining an oil passage together with the peripheral wall. The partitioning member defines a low-pressure chamber reserving hydraulic fluid and has, together with the recess, a press-fit portion abutting against an inner periphery of the peripheral wall when the partitioning member is inserted into the plunger. Consequently, the partitioning member has a deformed cross-sectional shape except for a circular shape when cut at a same height as the oil passage hole. The partitioning member has a same cross-sectional shape over its entire height.

Abstract: A power supply system is provided. For storage devices, upper limit powers are determined. A control unit includes a target power acquiring section which acquires power requested by an object or power supplied by a charging apparatus as target power of charge/discharge performed by storage devices. A residual capacity acquiring section acquires residual capacities of the storage devices. A first target power allocating section allocates the target power to the storage devices as charge/discharge powers based on the residual capacities. A determining section determines whether or not the allocated charge/discharge powers exceed the upper limit powers of the storage devices. A second target power allocating section reallocates the target power to the storage devices so that the allocated charge/discharge powers do not exceed the upper limit powers, when the determining section determines that any of the charge/discharge powers has exceeded the upper limit power of the related storage device.

Abstract: There is provided a semiconductor device having LDMOS transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with arrangements to prevent fluctuations of element characteristics caused by electric field concentration so that the reliability of the semiconductor device is improved. A trench is formed over the upper surface of a separation insulating film of each LDMOS transistor, the trench having a gate electrode partially embedded therein. This structure prevents electric field concentration in the semiconductor substrate near the source-side edge of the separation insulating film.

Abstract: A waterproof screw includes a screw member including a head portion and a shank portion and a sealing material covering the circumference of the shank portion. In the sealing material, the tackiness of a surface at the outer side in a radial direction of the shank portion is lower than that of a surface at the inner side in the radial direction thereof and the inner side in the radial direction of the sealing material has a shear storage elastic modulus G? at 25° C. measured at a frequency of 1 Hz of 50000 Pa or less.

Abstract: A semiconductor device including a protection device and a protected device, the protection device includes a first semiconductor region of a second conductivity type formed over a substrate, a second semiconductor region of the second conductivity type provided in the first semiconductor region, having a higher impurity concentration than the first semiconductor region, a third semiconductor region of the second conductivity type formed in a surface layer of the second semiconductor region, having a higher impurity concentration than the second semiconductor region, a fourth semiconductor region of the second conductivity type formed in the first semiconductor region and located away from the third semiconductor region, having a higher impurity concentration than the first semiconductor region, a fifth semiconductor region of a first conductivity type formed in the first semiconductor region and electrically short-circuited with the fourth semiconductor region, and a sixth semiconductor region of the first c

Abstract: A pressure-sensitive adhesive composition includes 100 parts by mass of a rubber component containing 40 to 93 mass % of a butyl rubber and 7 to 60 mass % of a polyisobutylene and 82 to 128 parts by mass of a softener having a kinetic viscosity at 40° C. of 100 to 9000 mm2/s.

Abstract: When a data utilization ratio R which is a utilization ratio of sectors in one page is not lower than a threshold value Rth1 and when write data is not frequently-rewritten data, a flash memory is controlled such that the write data is stored into the flash memory. When the data utilization ratio R which is the utilization ratio of sectors in one page is lower than the threshold value Rth1 or when the write data is frequently-rewritten data although the data utilization ratio R is not lower than the threshold value Rth1, a ReRAM is controlled such that the write data is stored into the ReRAM. This suppresses deterioration of the flash memory.

Abstract: A lash adjuster includes a body, a plunger inserted into the body and having a bottom wall with a valve hole and a peripheral wall having an oil passage hole, and a partitioning member. The plunger defines a high-pressure chamber. The partitioning member is inserted into the plunger and has an oil passage end located above the oil passage hole in an inserted state. The partitioning member has a recess defining an oil passage together with the peripheral wall. The partitioning member defines a low-pressure chamber reserving hydraulic fluid and has, together with the recess, a press-fit portion abutting against an inner periphery of the peripheral wall when the partitioning member is inserted into the plunger. Consequently, the press-fit portion has a deformed cross-sectional shape except for a circular shape when cut at a same height as the oil passage hole.

Abstract: To be provided is a foam waterproofing material superior in waterproofness and flexible enough to be compatible with further minute clearance. The foam waterproofing material according to the present invention is a waterproofing material including a foam having a thickness of 0.1 to 1.0 mm, characterized in that the foam has a micro cell structure with an average cell diameter of 10 to 60 ?m and an apparent density of 0.01 to 0.060 g/cm3. In the foam waterproofing material, the repulsive load when compressed to 0.1 mm (0.1 mm-compressive repulsion force) of the foam is preferably 0.01 to 0.1 MPa. The foam preferably has a closed-cell structure or a semi-open- and semi-closed-cell structure. In addition, the foam may have a pressure-sensitive adhesive layer on one or both faces thereof. The pressure-sensitive adhesive layer is preferably formed on the foam via a film layer.

Abstract: A roller lifter for internal combustion engines is provided, which has higher rigidity of the lifter body, prevents cocking in the cylinder, and can achieve a size reduction. The roller lifter includes a cylindrical lifter body having a sliding surface on an outer circumferential surface thereof and a roller rotatably attached to the lifter body via an axial support pin and making contact with a rotating cam lobe. The lifter body includes a pair of support portions supporting the axial support pin. The axial support pin is mechanically fastened to the pair of support portions, with both ends thereof inserted in support holes formed in the support portions. The lifter body includes an anti-rotation retainer extending radially outward from the sliding surface. The sliding surface is formed on both front and rear sides in the sliding direction of the anti-rotation retainer.

Abstract: A waterproof screw includes a screw member including a head portion and a shank portion and a sealing material covering the circumference of the shank portion. The sealing material has a shear storage elastic modulus G? at 25° C. and a frequency of 1 Hz of 50000 Pa or less.

Abstract: A semiconductor device including a protection device and a protected device, the protection device includes a first semiconductor region of a second conductivity type formed over a substrate, a second semiconductor region of the second conductivity type provided in the first semiconductor region, having a higher impurity concentration than the first semiconductor region, a third semiconductor region of the second conductivity type formed in a surface layer of the second semiconductor region, having a higher impurity concentration than the second semiconductor region, a fourth semiconductor region of the second conductivity type formed in the first semiconductor region and located away from the third semiconductor region, having a higher impurity concentration than the first semiconductor region, a fifth semiconductor region of a first conductivity type formed in the first semiconductor region and electrically short-circuited with the fourth semiconductor region, and a seventh semiconductor region of the first

Abstract: A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.

Abstract: To be provided is a foam waterproofing material superior in waterproofness and flexible enough to be compatible with further minute clearance. The foam waterproofing material according to the present invention is a waterproofing material including a foam having a thickness of 0.1 to 1.0 mm, characterized in that the foam has a micro cell structure with an average cell diameter of 10 to 60 ?m and an apparent density of 0.01 to 0.050 g/cm3. In the foam waterproofing material, the repulsive load when compressed to 0.1 mm (0.1 mm-compressive repulsion force) of the foam is preferably 0.01 to 0.1 MPa. The foam preferably has a closed-cell structure or a semi-open and semi-closed-cell structure. In addition, the foam may have a pressure-sensitive adhesive layer on one or both faces thereof. The pressure-sensitive adhesive layer is preferably formed on the foam via a film layer.

Abstract: A semiconductor device in which only the trigger voltage can be controlled without change in the hold voltage. In the semiconductor device, a protection device includes a lower doped collector layer, a sinker layer, a highly-doped collector layer, an emitter layer, a highly-doped base layer, a base layer, a first conductivity type layer, and a second conductivity type layer. The second conductivity type layer is formed in the lower doped collector layer and located between the base layer and first conductivity type layer. The second conductivity type layer has a higher impurity concentration than the lower doped collector layer.

Abstract: A sinker layer is in contact with a first conductivity-type well and a second conductivity-type drift layer, respectively, and is separated from a first conductivity-type collector layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.

Abstract: A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.

Abstract: A lash adjuster includes a cylindrical body, a cylindrical plunger, a low pressure chamber defined in the plunger, a high pressure chamber defined in a hollow lower interior of the body and filled with an operating fluid, a check valve allowing the operating fluid to flow into the high pressure chamber when in a valve-opened state and cutting off flow of the operating fluid from the high pressure chamber into the low pressure chamber when in a valve-closed state. A retainer of the check valve includes a base plate and a cylindrical portion extending upward from an outer circumferential edge of the base plate so as to surround the valve element. The base plate includes a central portion on which the valve element is placed and which has an upper surface formed with a swollen portion. The cylindrical portion has a plurality of openings formed through it circumferentially equiangularly.

Abstract: A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.

Abstract: A field-effect transistor (142) includes a lowly p-doped region 110 formed on a surface of a substrate (102), an n-doped drain region 112 and n-doped source region 114 arranged on a surface of the lowly p-doped region 110, and a device isolation insulating film 132 and device isolation insulating film 134. Here, the device isolation insulating film 132 is formed greater in film thickness than the device isolation insulating film 134; and in the n-doped source region 114, the peak concentration section having a highest dopant concentration is formed in a deeper position than in the n-doped drain region 112.