Abstract: An ink includes water, a coloring material, an organic solvent having a solubility parameter of from 8.0 to 13.0, an urethane resin particle and a metal ion, wherein the organic solvent having the solubility parameter of from 8.0 to 13.0 has a proportion of from 10.0% by mass to 30.0% by mass to the ink, where the metal ion is at least one selected from an alkali metal ion and an alkaline earth metal ion, where the metal ion has a proportion of from 4000 mg/L to 8000 mg/L to the ink.

Abstract: A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A zoom lens includes a first lens group having positive refractive power, a second lens group having negative refractive power, a third lens group having positive refractive power, a fourth lens group which has negative refractive power and is configured with only a single lens, and a fifth lens group having positive refractive power, which are arranged in order from an object side to an image side. During zooming, at least the first lens group, the second lens group, the third lens group, and the fourth lens group are movable in an optical axis direction. Focusing from infinity to a close range is performed by the fourth lens group being moved in the optical axis direction. At least one of following conditional expressions (1) and (2) is satisfied. ?11.0<Fno—w×Y/{(1??4—w2)×?5—w2}<?7.0 and??(1) ?11.0<Fno—t×Y/{(1??4—t2)×?5—t2}<?7.

Abstract: There is provided an imaging apparatus including an image sensor that converts an optical image captured through a lens into an electrical signal, and a shutter that has blade members to be opened and closed at a time of photographing. Correction of shading that is generated by an operation of the shutter is performed on a basis of an elliptical shape, and the elliptical shape is inclined in a direction according to an operation direction of the blade members.

Abstract: Protection of a solid-state imaging device is disclosed. One example of a protection unit includes a capacitor connected between an output terminal of a shutter drive pulse of a pulse drive unit and a substrate voltage terminal of a solid-state imaging device, a diode connected between a predetermined potential point and the substrate voltage terminal, and a clamp circuit configured from a resistor element connected between the substrate voltage terminal and a reference potential point. An anode end of the diode is connected to the predetermined potential point to which a potential corresponding to a rated voltage of the substrate voltage terminal is applied.

Abstract: An omnidirectional vertical polarization antenna is configured of monopole antennas, the number of which is k (k?3), disposed on a circumference of a circle at equal spaces. An omnidirectional horizontal polarization antenna is configured of first to m-th omnidirectional antennas stacked in m (m?2) layers in a first direction perpendicular to a reflector, and each of the first to m-th omnidirectional antennas is configured of half-wave dipole antennas, the number of which is n. The half-wave dipole antennas, the number of which is n (n?3), configuring each of the first to m-th omnidirectional antennas are respectively configured of arc-shaped conductive bodies, and disposed, at equal spaces, on each of circumferences of circles, the number of which is m, having different diameters, when viewed from a direction opposite to the first direction. The first to m-th omnidirectional antennas are stacked from the reflector in the first direction.

Abstract: The invention provides, among other aspects, compositions and methods for treating, preventing, and diagnosing diseases or conditions associated with an abnormal level or activity of biglycan; diseases or conditions associated with an abnormal level or activity of collagen VI; disorders associated with an unstable cytoplasmic membrane, due, e.g., to an unstable dystrophin associated protein complex (DAPC); and disorders associated with abnormal synapses or neuromuscular junctions, including those resulting from an abnormal MuSK activation or acetylcholine receptor (AChR) aggregation.

Abstract: A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate.

Abstract: A zoom lens includes a first lens group having positive refractive power, a second lens group having negative refractive power, a third lens group having positive refractive power, a fourth lens group which has negative refractive power and is configured with only a single lens, and a fifth lens group having positive refractive power, which are arranged in order from an object side to an image side. During zooming, at least the first lens group, the second lens group, the third lens group, and the fourth lens group are movable in an optical axis direction. Focusing from infinity to a close range is performed by the fourth lens group being moved in the optical axis direction. At least one of following conditional expressions (1) and (2) is satisfied. ?11.0<Fno—w×Y/{(1??4—w2)×?5—w2}<?7.0 and??(1) ?11.0<Fno—t×Y/{(1??4—t2)×?5—t2}<?7.

Abstract: There is provided a zoom lens including, in order from an object side to an image side, a first lens group having negative refractive power, a second lens group having positive refractive power, a third lens group having positive refractive power, and a fourth lens group having positive refractive power. In zooming from a wide-angle end to a telescopic end, the first lens group moves to the object side in a manner that a distance toward the second lens group shortens, and a distance between the third lens group and the fourth lens group lengthens. The third lens group includes a single lens or a single cemented lens.

Abstract: There is provided a zoom lens including in order from an object side to an image side, a first lens group having negative refractive power, a second lens group having positive refractive power, a third lens group having negative refractive power, and a fourth lens group having positive refractive power. In zooming from a wide-angle end to a telescopic end, the first lens group moves to the object side in a manner that a distance toward the second lens group narrows, and a distance between the third lens group and the fourth lens group widens. The third lens group includes a single lens or a single cemented lens.

Abstract: The invention provides, among other aspects, compositions and methods for treating, preventing, and diagnosing diseases or conditions associated with an abnormal level or activity of biglycan; diseases or conditions associated with an abnormal level or activity of collagen VI; disorders associated with an unstable cytoplasmic membrane, due, e.g., to an unstable dystrophin associated protein complex (DAPC); and disorders associated with abnormal synapses or neuromuscular junctions, including those resulting from an abnormal MuSK activation or acetylcholine receptor (AChR) aggregation.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: Protection of a solid-state imaging device is disclosed. One example of a protection unit includes a capacitor connected between an output terminal of a shutter drive pulse of a pulse drive unit and a substrate voltage terminal of a solid-state imaging device, a diode connected between a predetermined potential point and the substrate voltage terminal, and a clamp circuit configured from a resistor element connected between the substrate voltage terminal and a reference potential point. An anode end of the diode is connected to the predetermined potential point to which a potential corresponding to a rated voltage of the substrate voltage terminal is applied.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: The invention provides compositions and methods for treating, preventing, and diagnosing diseases or conditions associated with an abnormal level or activity of biglycan; disorders associated with an unstable cytoplasmic membrane, due, e.g., to an unstable dystrophin associated protein complex (DAPC); disorders associated with abnormal synapses or neuromuscular junctions, including those resulting from an abnormal MuSK activation or acetylcholine receptor (AChR) aggregation. Example of diseases include muscular dystrophies, such as Duchenne's Muscular Dystrophy, Becker's Muscular Dystrophy, neuromuscular disorders and neurological disorders.