Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

Abstract: A correction data creating method is provided. In the method, a source voltage is sequentially selected among a plurality of source voltages determined in advance and the selected source voltage is supplied to a heater for heating a substrate support. At the source voltage supplied to the heater, a power supplied to the heater is adjusted such that a resistance of the heater becomes a resistance value corresponding to a predetermined first temperature based on temperature conversion data indicating a relationship between the resistance of the heater and a temperature of the heater. A temperature of the substrate support is measured at a position where the heater is disposed as a second temperature. A correction value corresponding to the difference between the predetermined first temperature and the second temperature is calculated, and correction data indicating a corresponding relationship between each of the source voltages and the correction value is created.

Abstract: According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

Abstract: A water receiving member is reduced in size and is therefore made difficult to visually recognize. A cooking device (1) includes a main body (11), a front door (12), and a waste receiving member (41). The front door (12) has a water droplet restraining part (33) provided on a lower portion of an inner surface of the front door (12) which inner surface faces the heating room (13). While the front door (12) is closed, the water droplet restraining part (33) protrudes diagonally downwardly or horizontally from the inner surface of the front door (12) toward a rear side of the main body (11).

Abstract: A water receiving member is reduced in size and is therefore made difficult to visually recognize. A cooking device (1) includes a main body (11), a front door (12), and a waste receiving member (41). The front door (12) has a water droplet restraining part (33) provided on a lower portion of an inner surface of the front door (12) which inner surface faces the heating room (13). While the front door (12) is closed, the water droplet restraining part (33) protrudes diagonally downwardly or horizontally from the inner surface of the front door (12) toward a rear side of the main body (11).

Abstract: A piezoelectric vibration component that includes a piezoelectric vibrator, a substrate, and a conductive adhesive that bonds the piezoelectric vibrator to the substrate. The conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler. The silicone-based base resin has a weight-average molecular weight of 20,000 to 102,000. The cross-linker has a number-average molecular weight of 1,950 to 4,620. The conductive filler and the insulating filler have a particle size of 10 ?m or less.

Abstract: A piezoelectric vibration component that includes a piezoelectric vibrator, a substrate, and a conductive adhesive that bonds the piezoelectric vibrator to the substrate. The conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler. The silicone-based base resin has a weight-average molecular weight of 20,000 to 102,000. The cross-linker has a number-average molecular weight of 1,950 to 4,620. The conductive filler and the insulating filler have a particle size of 10 ?m or less.

Abstract: A heating cooker includes a main casing, a heating chamber that is provided in the main casing and that is for heating an object to be heated, a door (3) that is provided on a front face side of the main casing and that opens and closes an opening of the heating chamber, and a dew receiving container (6) that is detachably attached onto an under front face side of the main casing.

Abstract: A solid electrolytic capacitor that includes a capacitor element; an exterior resin; an anode lead terminal; and a cathode lead terminal. The anode lead terminal has a Cu base material, and an Au-plating layer formed thereon, and includes an Au region where the Au-plating layer as a surface layer is formed, and a Cu region where the Au-plating layer is not formed. The cathode lead terminal includes a base material, and an Au-plating layer as a surface layer of the cathode lead terminal, which is formed on the base material, and an anode section of the capacitor element is connected to the Cu region of the anode lead terminal.

Abstract: A bonding method that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A solid electrolytic capacitor that includes a capacitor element; an exterior resin; an anode lead terminal; and a cathode lead terminal. The anode lead terminal has a Cu base material, and an Au-plating layer formed thereon, and includes an Au region where the Au-plating layer as a surface layer is formed, and a Cu region where the Au-plating layer is not formed. The cathode lead terminal includes a base material, and an Au-plating layer as a surface layer of the cathode lead terminal, which is formed on the base material, and an anode section of the capacitor element is connected to the Cu region of the anode lead terminal.

Abstract: In a solid electrolytic capacitor, resistance welding is carried out to bond a valve metal substrate and a spacer together while controlling a welding current so that only a bonding material provided in spacers and having a relatively low melting point is melted. At least a portion of the bonding material provided in the spacer penetrates an etching part of the valve metal substrate, and thickness Ta of a core part located at a positive electrode part in the valve metal substrate and thickness Tc of the core part located at a negative electrode part satisfy the requirement of |Tc?Ta|/Tc×100?10[%].

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: An open/close adjustment device is connected to the door of a heating chamber of a cooking device, and the open/close adjustment device pulls the door back to its totally closed position. The open/close adjustment device adjusts an operation force when the door is passing a predetermined open angle. The operation force indicates a maximum value when the door is passing the predetermined open angle, and the maximum value is given by two protrusions disposed at front-side and rear-side with distance between them. Each of the protrusions each produces a load when they go over a support member, and a following one of the two protrusions produces a load larger than a load firstly produced by a preceding one of the two protrusions when the door is opened.

Abstract: In a solid electrolytic capacitor, resistance welding is carried out to bond a valve metal substrate and a spacer together while controlling a welding current so that only a bonding material provided in spacers and having a relatively low melting point is melted. At least a portion of the bonding material provided in the spacer penetrates an etching part of the valve metal substrate, and thickness Ta of a core part located at a positive electrode part in the valve metal substrate and thickness Tc of the core part located at a negative electrode part satisfy the requirement of |Tc?Ta|/Tc×100?10 [%].

Abstract: A cooking device for performing cooking using a microwave and steam, in which a door of a heating chamber includes, as constituting components, an inner frame, a choke cover, and a gasket. The inner frame is made of metal and has at its periphery a choke structure constructed from a large number of comb teeth. The gasket is installed in the door with a base section of the gasket held between the inner frame and the choke cover. A lip section of the gasket has a bag-like cross-section whose side that faces the inside of the heating chamber is an entrance. The forward end of the lip section is bent to the door side. The comb teeth, except those positioned at the corners of the door, are bent at a larger angle than in a case in which the gasket is not installed.

Abstract: A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 ?m to about 50 ?m. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Abstract: A cooking device has a cam mechanism (104) which moves in association with the pivoting of a door (103). The cam mechanism (104) includes a cam roller (131) rotatably mounted to a support base (130), an arm (132) having a front end pivotable connected to the door (103), having a cam surface (134) in sliding contact with the cam roller (131), and capable of moving in to-and-fro direction relative to a casing, and a coiled spring (133) stretched between the support base (130) and a rear end of the arm (132). The arm (132) has a recess (135) on a surface facing the door (103). When the door (103) is fully open, the recess (135) forms between the door (103) and the arm (132) a space (S) having sufficient size allowing a user's finger to be inserted in and removed from the space.