Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Abstract: The present invention provides a frequency converter including a frequency conversion device capable of accommodating a Si-series MMIC and also a GaAs-series MMIC by using a magneto-resistance element. A frequency converter according to an embodiment of the present invention includes: a frequency conversion device having a magneto-resistance element with a magnetization free layer, an intermediate layer, and a magnetization pinned layer; a magnetic field application mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the above frequency conversion device for receiving an external input signal. Further, the local oscillator includes a magneto-resistance element capable of generating the local oscillation signal by outputting an AC voltage according to a resistance change thereof.

Abstract: A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Abstract: A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: The present invention provides a frequency converter including a frequency conversion device capable of accommodating a Si-series MMIC and also a GaAs-series MMIC by using a magneto-resistance element. A frequency converter according to an embodiment of the present invention includes: a frequency conversion device having a magneto-resistance element with a magnetization free layer, an intermediate layer, and a magnetization pinned layer; a magnetic field application mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the above frequency conversion device for receiving an external input signal. Further, the local oscillator includes a magneto-resistance element capable of generating the local oscillation signal by outputting an AC voltage according to a resistance change thereof.

Abstract: To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal.

Abstract: Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.

Abstract: A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

Abstract: A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

Abstract: An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.

Abstract: A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.

Abstract: A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall 37 of a film forming chamber in the interior of a first film forming chamber 21, inner walls of an adhesion preventing shield 36, a partitioning plate 22, a shutter or the like) provided in the chamber for forming the MgO layer. The substance having a large getter effect must simply be a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher and, in particular, Ta (tantalum) as a substance which constitutes the magnetoresistance effect element is preferable.

Abstract: A magnetoresistive effect thin-film magnetic head including a magnetoresistive effect element having a CPP structure in which the gap length can be precisely optimized and a method for fabricating the magnetoresistive effect thin-film magnetic head are provided. The stacked magnetoresistive effect thin-films having the cap layer as the top layer are formed on the bottom shield layer. The soft magnetic layer consisting of any soft magnetic material is then formed on the cap layer, and the micro fabrication process is performed. Subsequently, at least one insulating layer is formed on the stacked magnetoresistive effect thin-films after the micro fabrication process, having the cap layer as the top layer, on which the soft magnetic layer is formed. Then, the soft magnetic layer is exposed by removing a part of the insulating layer formed on the soft magnetic layer and the top shield layer is formed on the surface of the exposed soft magnetic layer.

Abstract: A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.