Abstract: A valuable metal recovery method includes: recovering a battery slag from lithium ion battery waste; adding an acid to the battery slag; adding a sulfur compound the leachate; filtering the first processed product to obtain a first processed filtrate; adding a sulfur compound to the first processed filtrate; filtering the second processed product to obtain a second processed filtrate; adding calcium hydroxide to the second processed filtrate; filtering the third processed product to obtain a third processed filtrate; adding sodium carbonate to the third processed filtrate; filtering the processed product; heating the fourth processed filtrate; blowing carbon dioxide or adding a carbonate; and filtering the processed product, wherein a pH of the second processed product is higher than a pH of the first processed product, and a pH of the third processed product is higher than the pH of the second processed product.

Abstract: A Li recovery method includes: an acid leaching step of adding an acid to a battery slag to produce a leachate; a first addition step of adding a Ca content to the leachate to produce a first processed product; a post-first-addition filtration step of filtering the first processed product to be separated into a first processing filtrate and a first processing residue; a second addition step of adding sodium carbonate to the first processing filtrate to produce a second processed product; a post-second-addition filtration step of filtering the second processed product to be separated into a second processing filtrate and a second processing residue; heating the second processing filtrate; blowing carbon dioxide into the heated second processing filtrate to produce a third processed product; and a post-carbonation filtration step of filtering the third processed product to be separated into a third processing filtrate and a third processing residue.

Abstract: A method of recovering cobalt and nickel includes the steps of: adding alkaline to an acidic solution containing aluminum together with cobalt and nickel, adjusting pH of the acidic solution to 5 to 7, and converting the cobalt, the nickel and the aluminum into hydroxides thereof; recovering the hydroxides by solid-liquid separation, mixing the recovered hydroxides with an alkaline solution, and leaching aluminum contained in the hydroxides under a liquid condition of pH 8 or more; and recovering a cobalt hydroxide and a nickel hydroxide that aluminum is separated therefrom by solid-separation on a leachate.

Abstract: What is provided is a method for separating cobalt and nickel including: a crushing and sorting step of crushing and classifying the lithium ion secondary battery to obtain an electrode material containing at least cobalt, nickel, copper, and lithium; a leaching step of immersing the electrode material in a processing liquid containing sulfuric acid and hydrogen peroxide to obtain a leachate; a copper separation step of adding a hydrogen sulfide compound to the leachate with stirring and subsequently carrying out solid-liquid separation to obtain an eluate containing cobalt and nickel and a residue containing copper sulfide; and a cobalt/nickel separation step of adding an alkali metal hydroxide to the eluate to adjust a pH and subsequently, adding a hydrogen sulfide compound with stirring and carrying out solid-liquid separation to obtain a precipitate containing cobalt sulfide and nickel sulfide and a residual liquid containing lithium.

Abstract: A method of recovering cobalt and nickel includes the steps of: adding alkaline to an acidic solution containing aluminum together with cobalt and nickel, adjusting pH of the acidic solution to 5 to 7, and converting the cobalt, the nickel and the aluminum into hydroxides thereof; recovering the hydroxides by solid-liquid separation, mixing the recovered hydroxides with an alkaline solution, and leaching aluminum contained in the hydroxides under a liquid condition of pH 8 or more; and recovering a cobalt hydroxide and a nickel hydroxide that aluminum is separated therefrom by solid-separation on a leachate.

Abstract: A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape.

Abstract: There are provided a reactivity-introduced compound that imparts reactivity capable of bonding of a solid to another material, can perform imparting to a solid with high efficiency, and has high adhesion of bonding, a manufacturing method thereof, a surface-reactive solid using the same, and a manufacturing method of a surface-reactive solid. There are provided a reactivity-introduced compound provided on a surface of the solid for bonding the solid to another material, the reactivity-introduced compound including a triazine ring, an alkoxysilyl group (including a case where an alkoxy group in the alkoxysilyl group is OH), and a diazomethyl group in one molecule, a manufacturing method thereof, a surface-reactive solid using the same, and a manufacturing method of a surface-reactive solid.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape.

Abstract: A laser processing machine includes a processing head having a sensor, and a control unit to which a signal from the sensor is inputted. The control unit determines, by the signal, whether a drive shaft for the processing head needs to be adjusted. When the drive shaft is a state of needing adjustment, the control unit informs a display unit that the drive shaft is in a state of needing adjustment, and adjusts the drive shaft for the processing head by comparing data of a signal from the sensor with prestored data obtained during normal operation, in a different process than a laser processing process.

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: There are provided a reactivity-introduced compound that imparts reactivity capable of bonding of a solid to another material, can perform imparting to a solid with high efficiency, and has high adhesion of bonding, a manufacturing method thereof, a surface-reactive solid using the same, and a manufacturing method of a surface-reactive solid. There are provided a reactivity-introduced compound provided on a surface of the solid for bonding the solid to another material, the reactivity-introduced compound including a triazine ring, an alkoxysilyl group (including a case where an alkoxy group in the alkoxysilyl group is OH), and a diazomethyl group in one molecule, a manufacturing method thereof, a surface-reactive solid using the same, and a manufacturing method of a surface-reactive solid.

Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.

Abstract: According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.

Abstract: Provided is a technique for improving product attachment. In a semiconductor device, the following expression is satisfied by an angle A formed by an imaginary line connecting two attachment holes together and an imaginary line connecting together a lowest point of one of two projections positioned in a surrounding portion of one of the two attachment holes and a contact point between a bulge and a heat sink, with a screw fastened to the heat sink through the one attachment hole, where M represents a vertical direction between the lower end of a body and the lower end of a case, where W represents a bulge amount of the bulge, where T represents a height of the projection, where L represents a horizontal distance from the outer peripheral end of the case to the outer peripheral end of the heat dissipation plate: 0<A<arctan((M+W?T)/L).

Abstract: A laser processing machine includes a processing head having a sensor, and a control unit to which a signal from the sensor is inputted. The control unit determines, by the signal, whether a drive shaft for the processing head needs to be adjusted. When the drive shaft is a state of needing adjustment, the control unit informs a display unit that the drive shaft is in a state of needing adjustment, and adjusts the drive shaft for the processing head by comparing data of a signal from the sensor with prestored data obtained during normal operation, in a different process than a laser processing process.

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: Provided is a technique for improving product attachment. In a semiconductor device, the following expression is satisfied by an angle A formed by an imaginary line connecting two attachment holes together and an imaginary line connecting together a lowest point of one of two projections positioned in a surrounding portion of one of the two attachment holes and a contact point between a bulge and a heat sink, with a screw fastened to the heat sink through the one attachment hole, where M represents a vertical direction between the lower end of a body and the lower end of a case, where W represents a bulge amount of the bulge, where T represents a height of the projection, where L represents a horizontal distance from the outer peripheral end of the case to the outer peripheral end of the heat dissipation plate: 0<A<arctan ((M+W?T)/L).

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.