Abstract: A semiconductor device includes: an inner frame that surrounds an outer circumference of a semiconductor chip; and an outer frame that surrounds an outer circumference of the inner frame; wherein the outer frame is configured with an exterior wall that surrounds the outer circumference of the inner frame, and a fibrous reinforcing member that is wound on an outer circumference of the exterior wall. This prevents the broken pieces of a component that constitutes the semiconductor device from being scattered outside the semiconductor device, thereby not only to achieve improvement in the reliability of the entire system, but also to achieve downsizing of the semiconductor device.

Abstract: A display device is provided with a first adhesive layer formed on a sealing layer in a display region and a flexible sheet formed on a resin layer on an opposite side of a TFT layer, in which a first inorganic insulating layer has a first slit, the flexible sheet has a second slit, and the first adhesive layer is formed in a state of extending from the display region to a frame region, and overlapping with the first slit and the second slit.

Abstract: An adhesive is added to woody fibers obtained by steaming and defibrating a woody material. Then, the woody fibers are formed and are subjected to thermocompression molding. The woody material includes a compressed material obtained by compressing and integrating together a plurality of dried ground products of a Palmae plant.

Abstract: A semiconductor device includes a semiconductor module, an insulating resin layer, a frame member, and a heat sink. Insulating resin layer is bonded to semiconductor module and contains a first resin. Frame member is disposed to surround insulating resin layer, and includes a porous material. Heat sink and semiconductor module sandwich insulating resin layer and frame member. Frame member is compressed while being sandwiched between semiconductor module and heat sink. Insulating resin layer is filled in a region surrounded by semiconductor module, heat sink, and frame member. The first resin enters pores of the porous material.

Abstract: A semiconductor device includes: an inner frame that surrounds an outer circumference of a semiconductor chip; and an outer frame that surrounds an outer circumference of the inner frame; wherein the outer frame is configured with an exterior wall that surrounds the outer circumference of the inner frame, and a fibrous reinforcing member that is wound on an outer circumference of the exterior wall. This prevents the broken pieces of a component that constitutes the semiconductor device from being scattered outside the semiconductor device, thereby not only to achieve improvement in the reliability of the entire system, but also to achieve downsizing of the semiconductor device.

Abstract: The semiconductor device includes: a semiconductor module including a plate-shaped semiconductor element, a conductor electrically connected to one surface of the semiconductor element, a heat dissipation plate of which one surface is thermally and electrically connected to another surface of the semiconductor element, a resin member sealing the semiconductor element, the conductor, and the heat dissipation plate, and an insulation heat dissipation member thermally connected to another surface of the heat dissipation plate exposed from the resin member; a heatsink thermally connected to the insulation heat dissipation member; and an electric field inhibiting plate including a plate-shaped thin part covering the one surface of the semiconductor element and opposed thereto so as to be separated therefrom, the thin part being sealed by the resin member, and a connection part extending from the thin part to the heatsink and thermally and electrically connected to the heatsink.

Abstract: The semiconductor device includes: a semiconductor module including a plate-shaped semiconductor element, a conductor electrically connected to one surface of the semiconductor element, a heat dissipation plate of which one surface is thermally and electrically connected to another surface of the semiconductor element, a resin member sealing the semiconductor element, the conductor, and the heat dissipation plate, and an insulation heat dissipation member thermally connected to another surface of the heat dissipation plate exposed from the resin member; a heatsink thermally connected to the insulation heat dissipation member; and an electric field inhibiting plate including a plate-shaped thin part covering the one surface of the semiconductor element and opposed thereto so as to be separated therefrom, the thin part being sealed by the resin member, and a connection part extending from the thin part to the heatsink and thermally and electrically connected to the heatsink.

Abstract: An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

Abstract: A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

Abstract: A radiation plate structure includes a radiation plate, and a solder resist disposed on a main surface of the radiation plate and having at least one opening. The solder resist is made of any of polyimide (PI), polyamide (PA), polypropylene (PP), polyphenylene sulfide (PPS), a resin containing particulate ceramic (e.g., aluminum nitride (AlN), silicon nitride (Si3N4), or aluminum oxide (Al2O3)), and a high-melting-point insulator made of, for instance, glass.

Abstract: An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

Abstract: A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

Abstract: A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Abstract: A side surface at the outside of a plurality of teeth portions of one separated core is faced to a side surface of teeth portions of an adjacent separated core, so as to form a second slot which is straddled between the adjacent separated cores, and a first slot is formed by a plurality of teeth portions of one separated core, and a width size of the first slot is identical to a width size of the second slot, and coil conductor storage space is formed in the first slot via a first insulating component, and coil conductor storage space is formed in the second slot via a second insulating component, and a thickness size of the first insulating component is different from a thickness size of the second insulating component.

Abstract: A radiation plate structure includes a radiation plate, and a solder resist disposed on a main surface of the radiation plate and having at least one opening. The solder resist is made of any of polyimide (PI), polyamide (PA), polypropylene (PP), polyphenylene sulfide (PPS), a resin containing particulate ceramic (e.g., aluminum nitride (AlN), silicon nitride (Si3N4), or aluminum oxide (Al2O3)), and a high-melting-point insulator made of, for instance, glass.

Abstract: An insulation inspection device for motors includes an inverter for driving a motor, a partial discharge detecting unit for determining soundness of the motor, and a control circuit for controlling the inverter. The control circuit adjusts a switching interval of a voltage pulse of the inverter so as to be equal to a pulse round-trip propagation time between the inverter and the motor, thereby generating surge voltage higher than driving voltage for the motor, between the motor and ground, and adjusts a switching time for each phase of the inverter, thereby generating surge voltage higher than driving voltage for the motor, between phases, thus performing insulation inspection.

Abstract: A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Abstract: A side surface at the outside of a plurality of teeth portions of one separated core is faced to a side surface of teeth portions of an adjacent separated core, so as to form a second slot which is straddled between the adjacent separated cores, and a first slot is formed by a plurality of teeth portions of one separated core, and a width size of the first slot is identical to a width size of the second slot, and coil conductor storage space is formed in the first slot via a first insulating component, and coil conductor storage space is formed in the second slot via a second insulating component, and a thickness size of the first insulating component is different from a thickness size of the second insulating component.

Abstract: A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.

Abstract: A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.