Patents by Inventor Hiroki YONEMITSU
Hiroki YONEMITSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10019547Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.Type: GrantFiled: December 13, 2016Date of Patent: July 10, 2018Assignee: Toshiba Memory CorporationInventor: Hiroki Yonemitsu
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Patent number: 9816004Abstract: A pattern forming method includes forming a guide mask layer including a first feature having a first opening width, a second feature having a second opening width, a third feature having a third opening width. The first width being less than the second width and greater than the third width. A self-organizing material having a phase-separation period is disposed on the guide mask layer to at least partially fill the first, second, and third features. The self-organizing material is process to the cause phase-separation into first and second polymer portions. The first width is greater than the phase-separation period and the third width is less. A masking pattern is formed on the first layer by removing the second polymer portions and leaving the first polymer portions. The masking pattern is then transferred to the first layer.Type: GrantFiled: August 10, 2016Date of Patent: November 14, 2017Assignee: Toshiba Memory CorporationInventors: Ayako Kawanishi, Yusuke Kasahara, Hiroki Yonemitsu
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Patent number: 9685331Abstract: A semiconductor device manufacturing method includes forming a first film on a substrate having a first region and a second region. A second film is formed on the first film. Guide grooves are formed by removing portions of the second film and exposing the first film. A self-assembly material is coated on the exposed first film and heated to cause a phase separation into a first and a second phase section. The self-assembly material is irradiated. A mask pattern including at least a portion of the first phase section is formed by removing the second phase section. The mask pattern has a first dimension in the first region and a second dimension in the second region that is different from the first dimension. The first film is etched after the mask pattern is formed.Type: GrantFiled: August 8, 2016Date of Patent: June 20, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Ayako Kawanishi, Yusuke Kasahara, Hiroki Yonemitsu
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Publication number: 20170091369Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.Type: ApplicationFiled: December 13, 2016Publication date: March 30, 2017Inventor: Hiroki YONEMITSU
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Publication number: 20170076952Abstract: A pattern forming method includes forming a guide mask layer including a first feature having a first opening width, a second feature having a second opening width, a third feature having a third opening width. The first width being less than the second width and greater than the third width. A self-organizing material having a phase-separation period is disposed on the guide mask layer to at least partially fill the first, second, and third features. The self-organizing material is process to the cause phase-separation into first and second polymer portions. The first width is greater than the phase-separation period and the third width is less. A masking pattern is formed on the first layer by removing the second polymer portions and leaving the first polymer portions. The masking pattern is then transferred to the first layer.Type: ApplicationFiled: August 10, 2016Publication date: March 16, 2017Inventors: Ayako KAWANISHI, Yusuke KASAHARA, Hiroki YONEMITSU
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Patent number: 9541835Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.Type: GrantFiled: August 1, 2013Date of Patent: January 10, 2017Assignee: Kabushiki Kaisha ToshibaInventor: Hiroki Yonemitsu
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Patent number: 9371427Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.Type: GrantFiled: March 2, 2015Date of Patent: June 21, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Katsutoshi Kobayashi, Yusuke Kasahara, Hiroki Yonemitsu, Hitoshi Kubota, Ayako Kawanishi
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Publication number: 20160060410Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.Type: ApplicationFiled: March 2, 2015Publication date: March 3, 2016Inventors: Katsutoshi KOBAYASHI, Yusuke KASAHARA, Hiroki YONEMITSU, Hitoshi KUBOTA, Ayako KAWANISHI
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Publication number: 20150151329Abstract: In a pattern forming method according to the present embodiment, a first guide layer having a first pattern is formed above a base material. A second guide layer having a second pattern intersecting the first pattern is formed. A directed self-assembly material is introduced in a concave portion surrounded by the first and second guide layers. A directed self-assembly pattern having a diameter which is smaller than an opening diameter of the concave portion is formed in the concave portion by causing the directed self-assembly material to be directed self-assembled.Type: ApplicationFiled: February 27, 2014Publication date: June 4, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Ayako KAWANISHI, Hirokazu Kato, Hiroki Yonemitsu, Yusuke Kasahara
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Patent number: 8920664Abstract: According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film.Type: GrantFiled: January 30, 2013Date of Patent: December 30, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yuriko Seino, Hirokazu Kato, Hiroki Yonemitsu
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Publication number: 20140248439Abstract: According to one embodiment, a pattern formation method includes coating a polymer material on a film to be processed, the polymer material having a first segment and a second segment, the second segment containing a functional group that causes a cross-linking reaction, performing microphase separation of the polymer material to form a self-assembly pattern having a first polymer portion that contains the first segment and a second polymer portion that contains the second segment, performing irradiation with energy rays toward the self-assembly pattern in a cooling state; and selectively removing the first polymer portion.Type: ApplicationFiled: August 1, 2013Publication date: September 4, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hironobu SATO, Yuriko SEINO, Masahiro KANNO, Hirokazu KATO, Katsutoshi KOBAYASHI, Hiroki YONEMITSU, Ayako KAWANISHI
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Publication number: 20140231380Abstract: In one embodiment, a pattern forming method includes forming a physical guide that includes a first pattern in a first region and a second pattern in a second region on an underlying film, embedding a polymer material into a concave portion of the physical guide, microphase-separating the polymer material, to form a self-assembly pattern having a first and a second polymer sections, observing the self-assembly pattern in the second region, to determine from an observation result whether or not the self-assembly pattern in the first region has a predetermined shape, and selectively removing the first polymer section in the case of determining that the self-assembly pattern in the first region has the predetermined shape. The second pattern includes a pattern with a larger coverage ratio than the first pattern and a pattern with a smaller coverage ratio than the first pattern.Type: ApplicationFiled: July 26, 2013Publication date: August 21, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Yuriko SEINO, Hiroki Yonemitsu
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Publication number: 20140231388Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.Type: ApplicationFiled: August 1, 2013Publication date: August 21, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Hiroki Yonemitsu
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Patent number: 8808557Abstract: In one embodiment, a pattern forming method includes forming a physical guide that includes a first pattern in a first region and a second pattern in a second region on an underlying film, embedding a polymer material into a concave portion of the physical guide, microphase-separating the polymer material, to form a self-assembly pattern having a first and a second polymer sections, observing the self-assembly pattern in the second region, to determine from an observation result whether or not the self-assembly pattern in the first region has a predetermined shape, and selectively removing the first polymer section in the case of determining that the self-assembly pattern in the first region has the predetermined shape. The second pattern includes a pattern with a larger coverage ratio than the first pattern and a pattern with a smaller coverage ratio than the first pattern.Type: GrantFiled: July 26, 2013Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yuriko Seino, Hiroki Yonemitsu
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Publication number: 20140045341Abstract: According to one embodiment, a pattern forming method includes forming a physical guide, in which at least an upper part of a side wall surface of a concave section is an inclined surface, on a film to be processed, forming a polymer layer containing at least two kinds of segments inside the concave section of the physical guide, microphase-separating the polymer layer, to form self-assembled polymer domains including a first polymer section and a second polymer section, and processing the film to be processed by use of the self-assembled polymer domains.Type: ApplicationFiled: February 8, 2013Publication date: February 13, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Hiroki YONEMITSU
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Publication number: 20140021166Abstract: According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film.Type: ApplicationFiled: January 30, 2013Publication date: January 23, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuriko SEINO, Hirokazu KATO, Hiroki YONEMITSU