Abstract: An electro-optical device includes an electro-optical panel, a display area of the electro-optical panel being surrounded by a peripheral member. The electro-optical device also includes the following elements. A light-receiving sensor receives external light. A light-shielded sensor is connected to the light-receiving sensor and is shielded from the external light received by the light-receiving sensor. The light-shielded sensor is located at a position at which it is overlapped with the peripheral member.

Abstract: An electro-optical device includes a transparent substrate, a PIN type diode formed in the transparent substrate and receiving light introduced through a light receiving side surface of the transparent substrate, and a reflecting portion provided on a surface side opposite to the light receiving side surface of the transparent substrate and for reflecting light passed through the transparent substrate to the PIN type diode.

Abstract: An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.

Abstract: An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.

Abstract: An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.

Abstract: An electro-optical device includes an electro-optical panel, a display area of the electro-optical panel being surrounded by a peripheral member. The electro-optical device also includes the following elements. A light-receiving sensor receives external light. A light-shielded sensor is connected to the light-receiving sensor and is shielded from the external light received by the light-receiving sensor. The light-shielded sensor is located at a position at which it is overlapped with the peripheral member.

Abstract: An electro-optical device includes a substrate having a plurality of scanning lines, a plurality of data lines, and a plurality of pixels each including a pixel electrode and a switching element, the pixels disposed at positions corresponding to intersecting portions of the scanning lines and the data lines; a photoelectric transducer that converts light into electrical signals disposed on the substrate; and a reflecting layer that reflects incident light toward the photoelectric transducer and light-shielding layers that oppose the switching elements, the layers being disposed on the substrate. The reflecting layer is composed of the same film as the light-shielding layers.

Abstract: An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.

Abstract: An electro-optical device includes a transparent substrate, a PIN type diode formed in the transparent substrate and receiving light introduced through a light receiving side surface of the transparent substrate, and a reflecting portion provided on a surface side opposite to the light receiving side surface of the transparent substrate and for reflecting light passed through the transparent substrate to the PIN type diode.