Abstract: The power storage device includes power storage units arranged with a conductive plate interposed therebetween in the vertical direction, each of the power storage units includes an electrode stack including bipolar electrodes stacked with a separator interposed therebetween, and a sealing member provided around the electrode stack so as to seal a housing space formed between adjacent electrodes of the electrode stack. At least one of the power storage units is provided with an overhang member on an outer peripheral surface of the sealing member. The overhang member includes an inclined portion that extends from the outer peripheral surface of the sealing member toward the outside of the power storage unit and inclines downward as it leaves away from the outer peripheral surface of the sealing member, and a top portion formed at a lower end of the inclined portion.

Abstract: In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of ? type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in ? type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.

Abstract: In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of ? type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in ? type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.

Abstract: A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.

Abstract: A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.

Abstract: A multilayer ceramic capacitor with external terminals having terminal electrodes and external terminals of the electronic device body electrically bonded through a solder layer, wherein the solder layer is comprised of an Sn—Sb high temperature lead-free solder, the ratio between the Sn and Sb in this solder layer is, by ratio by weight percent, in a range of Sn/Sb=70/30 to 90/10, and the solder layer and terminal electrodes are formed between them with a diffusion layer formed by diffusion of a conductive ingredient of the terminal electrodes into the solder layer.

Abstract: A multilayer ceramic capacitor with external terminals having terminal electrodes and external terminals of the electronic device body electrically bonded through a solder layer, wherein the solder layer is comprised of an Sn—Sb high temperature lead-free solder, the ratio between the Sn and Sb in this solder layer is, by ratio by weight percent, in a range of Sn/Sb=70/30 to 90/10, and the solder layer and terminal electrodes are formed between them with a diffusion layer formed by diffusion of a conductive ingredient of the terminal electrodes into the solder layer.

Abstract: A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb1−yMy)(ZrzTi1−z)O3, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01≦y≦0.10, and 0.51≦z≦0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe2O3, of Fe; and (c) 10-1000 ppm of Ag.

Abstract: A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 .mu.m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500.degree.-1700.degree. C. in an oxygen atmosphere pressurized at 1-10 atm.

Abstract: A diagnostic voice instructing apparatus has a recording/playback device including a voice recording/playback LSI and a RAM, and converts an arbitrary instruction voice to a patient, which has been input through a microphone by a user for use in a scanning operation, into a digital signal and stores the signal in corresponding one of 15 channels of the RAM, the instructing voice may be input in an arbitrary language, dialect or expression. The recording/playback device is coupled to a scan controller, which controls the scanning operation of a CT apparatus, and a host controller, which sends commands to the recording/playback device and scan controller and receives control data from the scan controller. The host controller permits an operator to prepare ID data to each patient, which includes the name, and condition, of the patient, as well as designation of the necessary instructing voice to the patient in terms of a channel quantity.