Abstract: To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

Abstract: In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.

Abstract: A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH.sub.3).sub.3 (i.e., a trimethylsilyl group), resulting in producing CH.sub.3 COCH.sub.2 COCH.sub.3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.

Abstract: To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH.sub.3).sub.3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH.sub.3).sub.2 CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

Abstract: A feeder of a solid organometallic compound is obtained by filling a container up to 50-80 vol % of the total capacity of the container with stainless steel support whose pore ratio is adjusted to 50-80 vol % and then also filling it with solid granules of an organometallic compound which is solid at room temperature.

Abstract: An organometallic compound represented by the general formula (I) ##STR1## or the general formula (II)R-M.sup.2 -R (II)is evaporated, and then passed through the inner tube of a heat exchanger to be precipitated. The heat exchanger is then heated to re-evaporate the organometallic compound, and the re-evaporated organometallic compound is then precipitated in a filling container which is connected to said heat exchanger and cooled down to a prescribed temperature to fill the container.

Abstract: A method for purifying an organometal compound by removing oxygen atom-containing compounds included in the organometal compound as impurities is herein disclosed. The method comprises the steps of mixing an organometal compound represented by the following formula: ##STR1## with a crude product including an oxygen atom-containing compound represented by the following formula: R.sub.3-n M.sup.1 (OR).sub.n or R.sub.2-m M.sup.2 (OR).sub.m and an alkylaluminum chloride represented by the formula: X.sub.6-q Al.sub.2 R and then distilling the resulting mixture. In the foregoing formulas, R's may be the same or different and each represents an alkyl group having 1 to 3 carbon atoms; M.sup.1 represents a trivalent metal element; M.sup.2 represents a divalent metal element; n is an integer of 1, 2 or 3; m is an integer of 1 or 2; q is an integer ranging from 1 to 5; and X represents a chlorine atom.

Abstract: A method of laying a road characterized by spraying and impregnating a roadbed with 1 g/m.sup.2 to 500 g/m.sup.2 of a liquid water-repellent agent and then laying a road on said roadbed wherein said liquid water repellent agent is fluid at ordinary temperatures and contains as the main ingredients one or more compounds chosen from among silane-type compounds and organopolysiloxane derivatives.

Abstract: By blending a silazane with an organic silicon polymer such as polycarbosilane and polysilazane and inorganic powder such as alumina and silica, there is obtained a coating composition which can be applied and baked onto metallic and non-metallic substrates to form dielectric coatings which are improved in many properties including substrate adhesion, hardness, electrical insulation, heat resistance, water resistance, and chemical resistance.

Abstract: The method for preparing a monoalkylphosphine of high purity comprises reacting phosphine and an alkene in the presence of an anhydrous alkanesulfonic acid as a catalyst in a solvent having a boiling point higher than that of the monoalkylphosphine produced. The resulting monoalkylphosphine is brought into contact with an alkali solution to remove the catalyst, which is a sulfur atom-containing compound, remaining in the solution. The reaction solution from which the remaining catalyst is removed is then brought into contact with alkali metal hydrides or alkaline earth metal hydrides to eliminate any moisture remaining in the reaction solution. The alkali metal hydride is preferably sodium hydride or lithium aluminum hydride, while the alkaline earth metal hydride is preferably calcium hydride.

Abstract: According to the method for preparing hexamethyl cyclotrisilazane of the present invention, hexamethyl cyclotrisilazane can be obtained by heating a linear or cyclic silazane compound represented by the following general formula:--(Me.sub.2 SiNH).sub.n --(wherein Me represents a methyl group and n is an integer of not less than 4) in the presence of at least one catalytic compound selected from the group consisting of ammonium salts of arylsulfonic acids and/or aminoarylsulfonic acids and the resulting hexamethyl cyclotrisilazane represented by the formula: --Me.sub.2 SiNH).sub.3 -- can be recovered by distilling off the same outside the reaction system. According to the method of the present invention, highly pure hexamethyl cyclotrisilazane can be industrially prepared in good efficiency and in a high yield.

Abstract: A powdery mixture of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid is compression-molded into a green body which is subjected to a sintering treatment into a sintered body. Different from conventional methods in which the sintering treatment is performed always in an atmosphere of an inert gas, e.g. argon, the sintering treatment in the inventive method is performed in an atmosphere of a rare gas containing 0.005-5% by volume of nitrogen. The sintered body of silicon carbide obtained by this method has an outstandingly high electric volume resistivity of 10.sup.10 to 10.sup.13 ohm.cm and a coefficient of thermal conductivity of 100-220 W/m.K.

Abstract: In place of the conventional silicon source materials used in the prior art method for the preparation of silicon carbide whiskers, the inventive method utilizes a hydrolysis product of a chlorosilane compound R.sub.a SiCl.sub.4-a or a chlorodisilane compound R.sub.b Si.sub.2 Cl.sub.6-b, in which R is a hydrogen atom or a monovalent hydrocarbon group, a is zero to 3 and b is 1 to 5, as the silicon source which is intimately mixed with a powder of carbon and the mixture is heated at 1400.degree. to 1700.degree. C. to give silicon carbide whiskers in a high conversion. Alternatively, the hydrolysis of the chloro(di)silane compound is performed in an aqueous medium in which a powder of carbon is dispersed in advance so that the hydrolysis product as formed is already a mixture with the carbon powder.

Abstract: A process for preparing diorganohalogenosilanes wherein diorganodihalogenosilanes are reacted with at least one organosilicon compound having at least one .tbd.Si--H bond in the molecule and selected from polysilanes, polycarbosilanes and polysilphenylenes is described. This reaction proceeds in the presence of a Lewis acid.

Abstract: Sintered bodies of silicon carbide having remarkably increased volume resistivity and thermal conductivity can be obtained by heating a green body shaped of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid at 1800.degree. to 2200.degree. C. in the presence of or in the vicinity of a shaped body of a powdery mixture of a fine silicon carbide powder admixed with boron nitride in the same furnace. The improvements in the volume resistivity and thermal conductivity of the sintered body are particularly remarkable when the fine silicon carbide powder is a pyrolysis product of a methyl hydrogen silane compound such as tetramethyl disilane.

Abstract: The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.