Abstract: A plasma processing method allows to suppress the drop of the etching rate of the depoless-process without performing an additional seasoning process right after the dry cleaning process. The method includes a first and a second plasma processing step carried out in a single chamber and a step of dry cleaning an inside of the chamber by using a dummy substrate between the first and the second plasma processing step. Deposits are substantially accumulated in the chamber during the first plasma processing step, while substantially no deposits are accumulated in the chamber during the second plasma processing step. The dry cleaning step is performed by supplying into the chamber a deposit removing gas for removing the deposits produced in the chamber during the first plasma processing step and a dummy substrate etching gas capable of etching the dummy substrate.

Abstract: A plasma processing method allows to suppress the drop of the etching rate of the depoless-process without performing an additional seasoning process right after the dry cleaning process. The method includes a first and a second plasma processing step carried out in a single chamber and a step of dry cleaning an inside of the chamber by using a dummy substrate between the first and the second plasma processing step. Deposits are substantially accumulated in the chamber during the first plasma processing step, while substantially no deposits are accumulated in the chamber during the second plasma processing step. The dry cleaning step is performed by supplying into the chamber a deposit removing gas for removing the deposits produced in the chamber during the first plasma processing step and a dummy substrate etching gas capable of etching the dummy substrate.

Abstract: A method and system for processing a substrate in the presence of high purity C5F8. When processing oxides and dielectrics in a gas plasma processing system, C5F8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O2. When using a silicon nitride (SixNy) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Abstract: A dual damascene process for low-k or ultra low-k dielectric such as organo-silicate glass (OSG). After the via (112) etch, a trench (121) is etched in the OSG layer (108) using a less-polymerizing fluorocarbon added to an etch chemistry comprising a fluorocarbon and low N2/Ar ratio. The low N2/Ar ratio controls ridge formation during the trench etch. The combination of a less-polymerizing fluorocarbon with a higher-polymerizing fluorocarbon achieves a high etch rate and defect-free conditions.

Abstract: A method and system for processing a substrate in the presence of high purity C5F8. When processing oxides and dielectrics in a gas plasma processing system, C5F8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O2. When using a silicon nitride (SixNy) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Abstract: A dual damascene process for low-k or ultra low-k dielectric such as organo-silicate glass (OSG). After the via (112) etch, a trench (121) is etched in the OSG layer (108) using a less-polymerizing fluorocarbon added to an etch chemistry comprising a fluorocarbon and low N2/Ar ratio. The low N2/Ar ratio controls ridge formation during the trench etch. The combination of a less-polymerizing fluorocarbon with a higher-polymerizing fluorocarbon achieves a high etch rate and defect-free conditions.

Abstract: A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Abstract: An apparatus for etching a WSi film on a wafer by using a plasma of a gas containing a halogen element includes a vacuum process chamber in which upper and lower counter electrodes are provided. An electrostatic chuck is provided on a table at the center of a susceptor or the lower electrode. The wafer is held on the electrostatic chuck. A focus ring surrounding the wafer in a complementary manner is placed on a flange of the susceptor. The temperature of the wafer surface is set to be lower than that of the surface of the focus ring while the plasma is being generated. The focus ring comprises an inner part of amorphous carbon and an outer part of tungsten. While the plasma is being generated, a halide of tungsten generated from the outer part is diffused on the wafer surface, thereby correcting a distribution of the amount of the halide of tungsten on the wafer surface. Thus, the uniformity within the wafer surface of the etching rate and etching anisotropy is enhanced.