Abstract: A substrate contains a composition including VOSO4, K11H[(VO)3(SbW9O33)2], Na9[SbW9O33], oxacillin and 5-chloro-2-(2,4-dichlorophenoxy)phenol.

Abstract: A substrate contains a composition including VOSO4, K11H[(VO)3(SbW9O33)2], Na9[SbW9O33], oxacillin and 5-chloro-2-(2,4-dichlorophenoxy)phenol.

Abstract: A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.

Abstract: A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.

Abstract: A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.

Abstract: A method of manufacturing a semiconductor device, includes forming a gate insulating film and a gate electrode on a semiconductor substrate of a first conductivity type; forming a first drain region by implanting at a first predetermined dosage a first impurity of a second conductivity type corresponding to an opposite conductivity type with respect to the first conductivity type at a region of the semiconductor substrate in the vicinity of an end portion of the gate electrode; forming a second drain region substantially within the first drain region by implanting a second impurity of the second conductivity type at a second dosage that is greater than the first dosage; and forming a drain contact region within the second drain region by implanting a third impurity of the second conductivity type at a third dosage that is greater than the second dosage.

Abstract: A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.

Abstract: A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.

Abstract: Transparent and translucent dentifrice compositions improved in cleaning ability, stain removing ability and feeling are disclosed which comprise a mixture of an amorphous silica and an amorphous silicate containing at least 70% by weight of SiO.sub.2 which is partially inter-bonded with 1-10% by weight of an oxide of a metal selected from the group consisting of aluminum, magnesium and calcium and a transparent vehicle having substantially the same refractive index as that of the silica, the ratio of the silica to the silicate being in the range of 4:6 to 6:4 on a weight basis, the content of said mixture being in the range of 1 to 25% by weight of the composition, and the pH of the composition being in the range of 4.5 to 10.

Abstract: A plastic container is filled with an antiseptic toothpaste composition comprising an aluminum oxide compound such as aluminum oxide trihydrate as a main abrasive and a polyhydric alcohol such as propylene glycol, sorbitol, etc. in an amount of 5 to 100 moles in fluoride-free systems or 4.0 to 100 moles in fluoride-containing systems per liter of water in the toothpaste composition.

Abstract: A dentifrice composition is disclosed which comprises 100-100,000 units per gram of the composition of dextranase and 20-90% by weight of the composition of an aluminum oxide compound having the formula:Al.sub.2 O.sub.3.nH.sub.2 Owherein n.gtoreq.0, with an average particle size of 1-50 microns as a main abrasive. Dextranase is maintained stable in the dentifrice composition and the composition itself is stable, subject to minimal aging discoloration.

Abstract: A plastics container having oxygen permeability of 3 cc/m.sup.2.day.atm or more is filled with an antiseptic toothpaste composition comprising an aluminum oxide compound such as aluminum oxide trihydrate as a main abrasive and a polyhydric alcohol such as propylene glycol, sorbitol, etc. in an amount of 5 to 100 moles in fluoride-free systems or 4.0 to 100 moles in fluoride-containing systems per liter of water in the toothpaste composition.

Abstract: A stable dextranase-containing oral composition having a good feeling upon use is disclosed which comprises a dextranase enzyme produced by the genus Chaetomium, one of fungi, and a stabilizing amount of an admixture comprising water-soluble salts of alkyl sulfates having 10, 12, 14, and 16 carbon atoms in the alkyl chain in the following proportion:______________________________________ C.sub.10 --alkyl sulfate salt 0-20%, C.sub.12 --alkyl sulfate salt 50-80%, C.sub.14 --alkyl sulfate salt 10-30%, and C.sub.16 --alkyl sulfate salt 0-15%, ______________________________________based on the weight of the admixture.