Abstract: The dielectric film IF is disposed on the semiconductor substrate SB, and the plurality of electric fuse portions FU are disposed on the dielectric film IF. The n-type first well region WL1 is disposed in the semiconductor substrate SB and on the surface of the semiconductor substrate SB. The first well region WL1 is formed by integrally connecting the well region WLa located under each of the plurality of electric fuse portions FU to each other.

Abstract: An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor which are respectively coupled to gate electrodes. An insulation property of a gate insulating film of the first field effect transistor is broken down. A resistance value of the gate insulating film of the second field effect transistor is greater than a resistance value of the gate insulating film of the first field effect transistor.

Abstract: A semiconductor device with an anti-fuse element includes a semiconductor substrate, a well region of a first conductivity type formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate through a gate insulating film, and source regions of a second conductivity type opposite to the first conductivity type formed within the well region at the both ends of the gate electrode. When writing in the fuse element, a first writing potential is applied to the gate electrode, a first reference potential is applied to the well region, an intermediate potential is supplied to the source regions, and the intermediate potential is lower than the first writing potential and higher than the first reference potential.

Abstract: A semiconductor device includes a first field effect transistor and a second field effect transistor which are respectively coupled to gate electrodes. An insulation property of a gate insulating film of the first field effect transistor is broken down. A resistance value of the gate insulating film of the second field effect transistor is greater than a resistance value of the gate insulating film of the first field effect transistor.

Abstract: There is to provide a semiconductor device capable of improving the reliability. The semiconductor device is provided with an anti-fuse element including a semiconductor substrate, a well region of a first conductivity type formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate through a gate insulating film, and source regions of a second conductivity type opposite to the first conductivity type formed within the well region at the both ends of the gate electrode. When writing in the fuse element, a first writing potential is applied to the gate electrode, a first reference potential is applied to the well region, an intermediate potential is supplied to the source regions, and the intermediate potential is lower than the first writing potential and higher than the first reference potential.

Abstract: To improve reliability of SRAM. In a memory cell of the SRAM, a coupling capacitance is provided between memory nodes in consideration of dynamic stability.

Abstract: A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.

Abstract: An antifuse comprised of an NMOS transistor or an NMOS capacitor includes a first terminal coupled to a gate electrode, a second terminal coupled to a diffusion layer, and a gate insulating film interposed between the gate electrode and the diffusion layer. A programming circuit includes a first programming circuit which has first current drive capability and which performs first programming operation and a second programming circuit which has second current drive capability larger than the first current drive capability and which performs second programming operation to follow the first programming operation. In the first programming operation, the first programming circuit breaks down the gate insulating film by applying a first programming voltage between the first terminal and the second terminal. In the second programming operation, the second programming circuit applies a second programming voltage lower than the first programming voltage between the first terminal and the second terminal.

Abstract: A semiconductor device using resistive random access memory (ReRAM) elements and having improved tamper resistance is provided. The semiconductor device is provided with a unit cell which stores one bit of cell data and a control circuit. The unit cell includes n ReRAM elements (n being an integer of 2 or larger). At least one of the ReRAM elements is an effective element where the cell data is recorded. In reading the cell data, the control circuit at least selects the effective element and reads data recorded thereon as the cell data.

Abstract: A first semiconductor device is formed over a substrate and includes a first insulation film, a first electrode, and a first diffusion layer. A second semiconductor device is formed over a substrate and includes a second insulation film, a second electrode, and a second diffusion layer. The second electrode is coupled to the first electrode. A control transistor allows one of a source and a drain to be coupled to the first electrode and the second electrode, allows the other one of the source and the drain to be coupled to a bit line, and allows a gate electrode to be coupled to a word line. A first potential control line is coupled to the first diffusion layer and controls a potential of the first diffusion layer. A second potential control line is coupled to the second diffusion layer and controls a potential of the second diffusion layer.

Abstract: An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by way of a device isolator film, and is the same conduction type as the first diffusion layer. The gate wiring is formed as one integrated piece with the gate electrode, and extends over the device isolator film. A common contact couples the gate wiring to the second diffusion layer. The gate electrode is comprised of semiconductor material such as polysilicon that is doped with impurities of the same conduction type as the first diffusion layer. The second diffusion layer is coupled only to the common contact.

Abstract: A semiconductor device has a conventional NMOS transistor and an NMOS transistor functioning as an anti-fuse element and having an n type channel region. The conventional NMOS transistor is equipped with an n type extension region and a p type pocket region, while the anti-fuse element is not equipped with an extension region and a pocket region. This makes it possible to improve the performance of the transistor and at the same time improve the characteristics of the anti-fuse element after breakdown of its gate dielectric film.

Abstract: A semiconductor device using resistive random access memory (ReRAM) elements and having improved tamper resistance is provided. The semiconductor device is provided with a unit cell which stores one bit of cell data and a control circuit. The unit cell includes n ReRAM elements (n being an integer of 2 or larger). At least one of the ReRAM elements is an effective element where the cell data is recorded. In reading the cell data, the control circuit at least selects the effective element and reads data recorded thereon as the cell data.

Abstract: The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.

Abstract: A semiconductor device includes an electric fuse formed on a substrate. The electric fuse includes: a first interconnect formed on one end side thereof; a second interconnect formed in a layer different from a layer in which the first interconnect is formed; a first via provided in contact with the first interconnect and the second interconnect to connect those interconnects; a third interconnect formed on another end side thereof, the third interconnect being formed in the same layer in which the first interconnect is formed, as being separated from the first interconnect; and a second via provided in contact with the third interconnect and the second interconnect to connect those interconnects, the second via being lower in resistance than the first via. The electric fuse is disconnected by a flowing-out portion to be formed of a conductive material forming the electric fuse which flows outwardly during disconnection.

Abstract: A semiconductor device (200) includes: an electrical fuse (100) including: a lower layer interconnect (120) formed on a substrate; a via (130) provided on the lower layer interconnect (120) so as to be connected to the lower layer interconnect (120); and an upper layer interconnect (110) provided on the via (130) so as to be connected to the via (130), the electrical fuse being cut, in a state after being cut, through formation of a flowing-out portion, the flowing-out portion being formed when an electrical conductor forming the upper layer interconnect (110) flows outside the upper layer interconnect (110); and a guard upper layer interconnect (152) (conductive heat-absorbing member) formed in at least the same layer as the upper layer interconnect (110), for absorbing heat generated in the upper layer interconnect (110).

Abstract: A semiconductor device (200) includes an electric fuse (100) including: an upper layer fuse interconnect (112) formed on a substrate (not shown); a lower layer fuse interconnect (122); and a via (130) which is connected to one end of the upper layer fuse interconnect (112) and connects the upper layer fuse interconnect (112) and the lower layer fuse interconnect (122). The upper fuse interconnect (112) includes a width varying region (118) having a small interconnect width on a side of the one end.

Abstract: In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.

Abstract: An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by way of a device isolator film, and is the same conduction type as the first diffusion layer. The gate wiring is formed as one integrated piece with the gate electrode, and extends over the device isolator film. A common contact couples the gate wiring to the second diffusion layer. The gate electrode is comprised of semiconductor material such as polysilicon that is doped with impurities of the same conduction type as the first diffusion layer. The second diffusion layer is coupled only to the common contact.