Patents by Inventor Hiromitsu Nakashima
Hiromitsu Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11681222Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: GrantFiled: May 14, 2021Date of Patent: June 20, 2023Assignee: JSR CORPORATIONInventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
-
Patent number: 11603459Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.Type: GrantFiled: August 26, 2021Date of Patent: March 14, 2023Assignee: JSR CORPORATIONInventors: Tomohiko Sakurai, Sosuke Osawa, Hiromitsu Nakashima
-
Publication number: 20220299873Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit including an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), A represents an oxygen atom or a sulfur atom; a sum of m and n is 2 or 3, wherein m is 1 or 2, and n is 1 or 2; X represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and R1 represents a monovalent organic group including a fluorine atom.Type: ApplicationFiled: June 1, 2022Publication date: September 22, 2022Applicant: JSR CORPORATIONInventors: Ryuichi NEMOTO, Ryotaro TANAKA, Taiichi FURUKAWA, Katsuaki NISHIKORI, Hiromitsu NAKASHIMA
-
Publication number: 20220260908Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.Type: ApplicationFiled: August 27, 2021Publication date: August 18, 2022Applicant: JSR CORPORATIONInventors: Tetsurou KANEKO, Hiromitsu NAKASHIMA, Yuushi MATSUMURA, Junya SUZUKI, Shuto MORI, Hiroyuki ISHII
-
Publication number: 20220137508Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: ApplicationFiled: May 14, 2021Publication date: May 5, 2022Applicant: JSR CORPORATIONInventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
-
Publication number: 20210389671Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Applicant: JSR CORPORATIONInventors: Tetsurou KANEKO, Hiromitsu NAKASHIMA, Yuushi MATSUMURA, Junya SUZUKI, Shuto MORI, Hiroyuki ISHII
-
Publication number: 20210388197Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.Type: ApplicationFiled: August 26, 2021Publication date: December 16, 2021Applicant: JSR CORPORATIONInventors: Tomohiko SAKURAI, Sosuke Osawa, Hiromitsu Nakashima
-
Publication number: 20210364918Abstract: A radiation-sensitive resin composition contains a resin including a structural unit having a phenolic hydroxyl group; and a compound represented by formula (1). In the formula (1), Ar is a substituted or unsubstituted aromatic ring having 6 to 20 carbon atoms; n is an integer of 2 to 4; Z+ is a monovalent onium cation; a plurality of Ys are each independently a polar group; and at least one of the plurality of Ys is an —OH group or an —SH group bonded to a carbon atom adjacent to a carbon atom to which a COO? group is bonded.Type: ApplicationFiled: August 3, 2021Publication date: November 25, 2021Applicant: JSR CORPORATIONInventors: Katsuaki Nishikori, Shuto Mori, Junya Suzuki, Hiromitsu Nakashima
-
Patent number: 11130856Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.Type: GrantFiled: April 26, 2019Date of Patent: September 28, 2021Assignee: JSR CorporationInventors: Tomohiko Sakurai, Sosuke Osawa, Hiromitsu Nakashima
-
Publication number: 20210278764Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: ApplicationFiled: May 14, 2021Publication date: September 9, 2021Applicant: JSR CORPORATIONInventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
-
Patent number: 11036133Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: GrantFiled: December 19, 2019Date of Patent: June 15, 2021Assignee: JSR CORPORATIONInventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
-
Publication number: 20200124961Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: JSR CORPORATIONInventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
-
Patent number: 10620534Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: GrantFiled: August 17, 2018Date of Patent: April 14, 2020Assignee: JSR CORPORATIONInventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
-
Patent number: 10564546Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.Type: GrantFiled: May 11, 2017Date of Patent: February 18, 2020Assignee: JSR CORPORATIONInventors: Tomohiko Sakurai, Sousuke Oosawa, Hiromitsu Nakashima, Kousuke Terayama
-
Publication number: 20190278175Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: ApplicationFiled: August 17, 2018Publication date: September 12, 2019Applicant: JSR CORPORATIONInventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
-
Publication number: 20190249000Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.Type: ApplicationFiled: April 26, 2019Publication date: August 15, 2019Applicant: JSR CorporationInventors: Tomohiko SAKURAI, Sosuke Osawa, Hiromitsu Nakashima
-
Publication number: 20190025695Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: ApplicationFiled: August 17, 2018Publication date: January 24, 2019Applicant: JSR CORPORATIONInventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
-
Patent number: 10082733Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).Type: GrantFiled: October 21, 2016Date of Patent: September 25, 2018Assignee: JSR CORPORATIONInventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
-
Patent number: 10048586Abstract: A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. R1 represents an alkali-labile group. A represents an oxygen atom, —NR?—, —CO—O—# or —SO2—O—##, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R? represents a hydrogen atom or an alkali-labile group, and “#” and “##” each indicate a bonding hand bonded to R1. -A-R1??(x).Type: GrantFiled: February 29, 2016Date of Patent: August 14, 2018Assignee: JSR CORPORATIONInventors: Yuusuke Asano, Mitsuo Sato, Hiromitsu Nakashima, Kazuki Kasahara, Yoshifumi Oizumi, Masafumi Hori, Takanori Kawakami, Yasuhiko Matsuda, Kazuo Nakahara
-
Publication number: 20170329228Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.Type: ApplicationFiled: May 11, 2017Publication date: November 16, 2017Applicant: JSR CORPORATIONInventors: Tomohiko SAKURAI, Sousuke OOSAWA, Hiromitsu NAKASHIMA, Kousuke TERAYAMA