Abstract: A substrate processing method according to an exemplary embodiment includes: supplying, to a peeling target portion which is at least a portion of a coating film including a first coating film and a second coating film, a chemical liquid for enhancing a peeling performance between the first coating film and the second coating film, the first coating film being formed on a surface of a substrate, the second coating film being formed on the first coating film and containing carbon with a different composition from that of the first coating film; amplifying a temperature fluctuation of the peeling target portion to which the chemical liquid has been supplied; and supplying a rinse liquid for removing the second coating film to the peeling target portion after the amplification of the temperature fluctuation.

Abstract: There is provided a substrate processing apparatus including a rotary holding part configured to hold and rotate a substrate with a film formed on an upper surface of the substrate; a first supply part configured to supply a first chemical solution for etching the film to a peripheral edge portion of the upper surface of the substrate held by the rotary holding part; a second supply part configured to supply the first chemical solution to a peripheral edge portion of a lower surface of the substrate; and a third supply part configured to supply a second chemical solution, which exothermically reacts with the first chemical solution, to the peripheral edge portion of the lower surface of the substrate.

Abstract: A wet etching method according to the present disclosure includes rotating a substrate, supplying an etching chemical liquid to a first surface (a surface on which a device is formed) of the rotating substrate, and supplying an etching inhibiting liquid (DIW) to a second surface (a surface on which no device is formed) of the substrate while supplying the chemical liquid to the substrate. The etching inhibiting liquid wraps around the first surface through an edge of the substrate and reaches a first region extending from the edge of the substrate on the peripheral edge portion of the first surface to a first radial position located radially inward from the edge on the first surface. As a result, bevel etching of an upper layer of a substrate on which a film having two layers is formed may be satisfactorily performed.

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

Abstract: There is provided a substrate processing apparatus including a rotary holding part configured to hold and rotate a substrate with a film formed on an upper surface of the substrate; a first supply part configured to supply a first chemical solution for etching the film to a peripheral edge portion of the upper surface of the substrate held by the rotary holding part; a second supply part configured to supply the first chemical solution to a peripheral edge portion of a lower surface of the substrate; and a third supply part configured to supply a second chemical solution, which exothermically reacts with the first chemical solution, to the peripheral edge portion of the lower surface of the substrate.

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

Abstract: This wet etching method comprises rotating a substrate (W), supplying an etching chemical to a first surface (a surface for forming a device) of the rotating substrate, and supplying an etching inhibitor (DIW) to a second surface (a surface which is not used for forming a device) during the supplying the etching chemical to the substrate. The etching inhibitor moves past an edge (WE) of the substrate to swirl onto the first surface and reaches a first region extending from the edge of the substrate on the periphery of the first surface to a first radial position located radially inward from the edge on the first surface. Thus, it is possible to perform an excellent bevel etching treatment on the upper layer of the substrate having a two-layered film formed thereon.

Abstract: A particle can be suppressed from being generated by removing a processing liquid or crystals caused by the processing liquid which adhere to a cover member. A substrate processing apparatus includes a substrate holding unit 3 configured to hold a substrate W; a processing liquid supply unit 7 configured to supply a processing liquid onto the substrate W held in the substrate holding unit 3; and a cover member 5 which has a ring shape and is disposed to face a peripheral portion of the substrate held in the substrate holding unit 3. Further, the cover member 5 is equipped with a heater 701 configured to heat the cover member 5.

Abstract: A liquid processing apparatus includes a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; an annular rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integrally rotate the rotary cup and the substrate holding member; and a liquid supply mechanism configured to supply a process liquid onto the substrate. The apparatus further includes an annular drain cup configured to receive the process liquid discharged from the rotary cup, and provided with a drain port; and a circular flow generation element configured to generate a circular flow within the drain cup when the rotary cup and the substrate holding member are rotated, such that the circular flow serves to lead the process liquid within the drain cup to the drain port.

Abstract: A liquid processing apparatus, capable of preventing a cleaning solution from remaining on a lifting member of a target object, thereby preventing an attachment of a cleaning solution to an opposite surface of a target object, and preventing an inflow of the cleaning solution into an inert gas supply part to efficiently supply the inert gas to the object, is disclosed. The liquid processing apparatus includes a hollow-shaped support plate to support an object, a hollow-shaped rotary shaft fixedly connected to the support plate, a rotary drive part to rotate the rotary shaft in a predetermined rotating direction, and a lift pin plate arranged in a hollow of the support plate to have lift pins supporting a main body and the processed object. A cleaning solution supply part to supply a cleaning solution and an inert gas supply part to supply an inert gas are extended in a hollow of the rotary shaft.

Abstract: A substrate processing apparatus includes a substrate holding member configured to rotate along with a wafer (W) held thereon and a drain cup (51) configured to surround the wafer (W). A cleaning process is performed by rotating the wafer (W) while supplying a process liquid onto the wafer (W), and then a rinsing process is performed by rotating the wafer (W) in a similar way while supplying a rinsing liquid onto the wafer (W). The rinsing process is performed by first adjusting a rotational speed of the wafer (W) to be the same as the rotational speed used in the cleaning process while supplying the rinsing liquid, and then raising a liquid level of the rinsing liquid inside the drain cup (51) by decreasing the rotational speed of the wafer (W) or increasing a flow rate of the rinsing liquid, and raising a reach position of the rinsing liquid on the outer sidewall of the drain cup (51) by increasing the rotational speed of the wafer (W).

Abstract: After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

Abstract: A liquid treatment device having a rotatable substrate holding section (2) for horizontally holding a wafer (W), an annular-shaped rotation cup (4) which surrounds the wafer (W) which rotates with the wafer (W), a rotation mechanism (3) for integrally rotating the rotation cup (4) and the substrate holding section (2), a nozzle (5) for supplying a treatment liquid for the wafer (W) at a treatment position and a cleaning liquid for the rotation cup (4) at its external surface, a liquid supply section (85) for the nozzle (5), and a nozzle movement mechanism for moving the nozzle (5) between the wafer treatment position and the external portion of the rotation cup (4).

Abstract: A liquid processing apparatus is arranged to planarize a film on a substrate by supplying onto the film a process liquid for dissolving the film while rotating the substrate. The apparatus includes a substrate holding member configured to rotatably hold the substrate in a horizontal state, a rotation mechanism configured to rotate the substrate holding member, and a liquid supply mechanism configured to supply the process liquid onto a surface of the substrate. The liquid supply mechanism includes first and second liquid delivery nozzles configured to deliver the same process liquid. The first liquid delivery nozzle has a smaller diameter and provides a smaller delivery flow rate, as compared to the second liquid delivery nozzle. The first liquid delivery nozzle is inclined to deliver the process liquid in a rotational direction of the substrate, and is movable between a center of the substrate and a peripheral edge thereof.

Abstract: A control mechanism of a cleaning apparatus is preset to control the apparatus for a cleaning process or a rinsing process to include delivering a process liquid, which is corresponding one of a cleaning liquid and a rinsing liquid, from a back surface liquid supply nozzle through a liquid delivery port, thereby forming a liquid film on the back surface of a substrate, and then once stopping and then re-starting delivery of the process liquid from the back surface liquid supply nozzle, thereby forming a liquid film also on a portion around the liquid delivery port, so as to process the portion around the liquid delivery port as well as the substrate.

Abstract: A liquid processing apparatus includes a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate and to rotate along with the substrate; a liquid supply mechanism configured to supply a process liquid onto at least a front surface of the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining out of the rotary cup; and a guide member disposed to surround the substrate, having an upper surface to be substantially continued to the front surface of the substrate, and configured to rotate along with the substrate holding member and the rotary cup, such that a process liquid supplied onto the front surface of the substrate and thrown off from the substrate is guided by the upper surface of the guide member from the rotary cup to the exhaust/drain section.

Abstract: After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

Abstract: After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

Abstract: A liquid processing apparatus includes: a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integratedly rotate the rotary cup and the substrate holding member; a liquid supply mechanism configured to supply a process liquid onto the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining of the rotary cup. The exhaust/drain section includes an annular drain cup configured to mainly collect and discharge a process liquid thrown off from the substrate, and an exhaust cup surrounding the drain cup and configured to mainly collect and discharge a gas component from inside and around the rotary cup. Liquid-draining from the drain cup and gas-exhausting from the exhaust cup are performed independently of each other.

Abstract: A substrate processing apparatus includes a substrate holding member configured to rotate along with a wafer (W) held thereon and a drain cup (51) configured to surround the wafer (W). A cleaning process is performed by rotating the wafer (W) while supplying a process liquid onto the wafer (W), and then a rinsing process is performed by rotating the wafer (W) in a similar way while supplying a rinsing liquid onto the wafer (W). The rinsing process is performed by first adjusting a rotational speed of the wafer (W) to be the same as the rotational speed used in the cleaning process while supplying the rinsing liquid, and then raising a liquid level of the rinsing liquid inside the drain cup (51) by decreasing the rotational speed of the wafer (W) or increasing a flow rate of the rinsing liquid, and raising a reach position of the rinsing liquid on the outer sidewall of the drain cup (51) by increasing the rotational speed of the wafer (W).