Patents by Inventor Hiromitsu Wakabayashi

Hiromitsu Wakabayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist, method of forming a resist pattern and manufacturing an electronic parts using the resist
    Patent number: 5756254
    Abstract: A resist comprising a sulfonyl compound represented by the following general formula (1): ##STR1## wherein R.sup.1 is a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.2 is a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.3 is a bivalent organic group, and n is an integer of 2 or more. The R.sup.3 in the general formula (1) is preferably a bivalent organic group represented by the general formula (2): ##STR2## wherein R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25 and R.sup.26 may be the same or different and are individually a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, and Z is a bivalent organic group.
    Type: Grant
    Filed: May 28, 1996
    Date of Patent: May 26, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoko Kihara, Satoshi Saito, Hiromitsu Wakabayashi, Makoto Nakase, Masayuki Oba
  • Resist composition for forming a pattern and method of forming a pattern wherein the composition 4-phenylpyridine as an additive
    Patent number: 5744281
    Abstract: A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: April 28, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirokazu Niki, Hiromitsu Wakabayashi, Rumiko Hayase, Naohiko Oyasato, Yasunobu Onishi, Kazuo Sato, Kenji Chiba, Takao Hayashi
  • Resist composition for forming a pattern comprising a pyridinium compound as an additive
    Patent number: 5658706
    Abstract: A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
    Type: Grant
    Filed: September 8, 1994
    Date of Patent: August 19, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirokazu Niki, Hiromitsu Wakabayashi, Rumiko Hayase, Naohiko Oyasato, Yasunobu Onishi, Kazuo Sato, Kenji Chiba, Takao Hayashi