Abstract: A silicon carbide single crystal substrate and silicon carbide raw material powder are provided in a graphite vessel. Arsenic or an arsenic compound is added to the silicon carbide raw material powder. A mixed gas obtained by mixing a gas containing arsenic with a raw material gas formed by heat sublimation of the silicon carbide raw material powder is supplied to the silicon carbide single crystal substrate to grow a silicon carbide single crystal containing arsenic. Arsenic as an n-type dopant controls the resistivity of the silicon carbide single crystal. Because it has an atomic radius equivalent to silicon, it does not compress or expand the crystal, whereby crystalline distortion is less likely to occur. As a result, formation of heterogeneous polymorphism is suppressed.

Abstract: A recording film is formed by a vacuum film formation process. The recording film contains a substance which is thermally decomposed when a recording laser beam is irradiated thereto. When the substance is thermally decomposed by irradiation of the recording laser beam, a substance generated by the thermal decomposition is precipitated within the recording film, and therefore a change in complex index of refraction is caused predominantly over the raising deformation in the recording film. As a result, information is recorded in the recording film while causing almost no raising deformation of the recording film.

Abstract: A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.

Abstract: A thermoelectric generating composite functioning apparatus used as a glow plug in a diesel engine has sintered semiconductor elements respectively formed in the shape of a bar of N-type and P-type thermoelectric semiconductor materials. The N-type and P-type semiconductor elements are provided oppositely with a gap between them, and their end portions are put in mutual contact to form a P-N junction. A low thermal conductivity insulator is filled in the interval between the N-type and the P-type semiconductor elements. The N-type and P-type semiconductor elements provided in the P-N junction state are contained through the insulator in a housing. Lead terminals connected to the N-type and P-type semiconductor elements are formed in the housing. The apparatus may provide heat to the combustion chamber, or generate electricity from the heat in the combustion chamber.