Patents by Inventor Hironari Shimizu

Hironari Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CDR-modified anti-Siglec-15 antibody
    Patent number: 9464133
    Abstract: Provided is a pharmaceutical composition for the treatment and/or prophylaxis of abnormal bone metabolism targeting a protein encoded by a gene strongly expressed in osteoclasts. Specifically provided is a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-15 and has an activity of inhibiting osteoclast formation, and the like.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: October 11, 2016
    Assignee: Daiichi Sankyo Company, Limited
    Inventors: Yoshiharu Hiruma, Takako Kimura, Hironari Shimizu
  • CDR-MODIFIED ANTI-SIGLEC-15 ANTIBODY
    Publication number: 20150056189
    Abstract: Provided is a pharmaceutical composition for the treatment and/or prophylaxis of abnormal bone metabolism targeting a protein encoded by a gene strongly expressed in osteoclasts. Specifically provided is a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-15 and has an activity of inhibiting osteoclast formation, and the like.
    Type: Application
    Filed: March 29, 2013
    Publication date: February 26, 2015
    Applicant: Daiichi Sankyo Company, Limited
    Inventors: Yoshiharu Hiruma, Takako Kimura, Hironari Shimizu
  • Plasma etching system
    Patent number: 6432261
    Abstract: A substrate holder and an electrode are arranged facing each other in a vacuum chamber. The electrode is provided with a process gas introduction mechanism and a gas blowoff plate. A substrate is loaded on the substrate holder, the process gas is introduced, and electric power is supplied between the substrate holder and the electrode to generate plasma for etching the substrate surface. At the rear side of the gas blowoff plate in the vacuum chamber, a plurality of magnets is provided at concentric positions. The magnetic field strength resulting from the magnets on the surface of the substrate is made 0 Gauss. By using the magnets in this way and improving the magnets, it is possible to establish a better etching process for various materials to be etched.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: August 13, 2002
    Assignee: Anelva Corporation
    Inventors: Kazuhito Watanabe, Hironari Shimizu, Toshiaki Koguchi, Nobuyuki Takahashi
  • Plasma etching system
    Publication number: 20010008173
    Abstract: A substrate holder and an electrode are arranged facing each other in a vacuum chamber. The electrode is provided with a process gas introduction mechanism and a gas blowoff plate. A substrate is loaded on the substrate holder, the process gas is introduced, and electric power is supplied between the substrate holder and the electrode to generate plasma for etching the substrate surface. At the rear side of the gas blowoff plate in the vacuum chamber, a plurality of magnets is provided at concentric positions. The magnetic field strength resulting from the magnets on the surface of the substrate is made 0 Gauss. By using the magnets in this way and improving the magnets, it is possible to establish a better etching process for various materials to be etched.
    Type: Application
    Filed: January 12, 2001
    Publication date: July 19, 2001
    Inventors: Kazuhito Watanabe, Hironari Shimizu, Toshiaki Koguchi, Nobuyuki Takahashi