Abstract: For a semiconductor device S, an inspection is performed in a zero-bias state by use of electromagnetic waves generated by irradiation of pulsed laser light, and an inspection range is set with reference to layout information of the semiconductor device S to perform two-dimensional scanning by inspection light L1 of the pulsed laser light within the range. Moreover, with the inspection range of the semiconductor device S arranged at a predetermined position with respect to an optical axis of an optical system, and with a solid immersion lens 36 disposed for the semiconductor device S, by a galvanometer scanner 30 being scanning means, the inspection range of the semiconductor device S is two-dimensionally scanned by the inspection light L1 via the solid immersion lens 36, and an electromagnetic wave emitted from the semiconductor device S is detected by a photoconductive element 40.