Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract: A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

Abstract: A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract: A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

Abstract: A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract: A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: A dry etching method includes: mounting a silicon substrate in a processing chamber; generating a plasma by discharging an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Cl2 gas and one of an O2 gas, a rare gas, a HBr gas, a CF4 gas, and a SF6 gas.

Abstract: A method of fabricating a photovoltaic panel is disclosed which is formed by arranging a number of granular photovoltaic devices in an array and forming the array into the shape of a panel from a transparent resin and includes each photovoltaic device having a part protruding from the resin.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: A method of fabricating a photovoltaic panel is disclosed which is formed by arranging a number of granular photovoltaic devices in an array and forming the array into the shape of a panel from a transparent resin and includes each photovoltaic device having a part protruding from the resin.

Abstract: An object of the present invention is to form suitable spherical convex lens on the surfaces of spherical or granular photovoltaic devices in an easy and cost-effective method even when the photovoltaic devices have variations in the size and shape. To achieve the object, the invention is a method in which are carried out immersing the photovoltaic device in a liquid resin and lifting the photovoltaic device, thereby causing the liquid resin to adhere to the surface of the photovoltaic device, and hardening the liquid resin adherent to the surface of the photovoltaic device, thereby forming a resin lens on the surface of the photovoltaic device. Since a spherical convex lens is formed on the surface of the photovoltaic device by surface tension of the resin liquid, a suitable spherical convex lens can be formed on the surface of the photovoltaic device and the photovoltaic device can be positioned at the center of the lens even when the photovoltaic devices have variations in the size and shape.