Abstract: An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure includes a material of the overcoat dielectric layer. The raised frame structure is positioned in an edge region within 0.25 L and 0.45 L from an edge of an active region where the surface acoustic wave is generated. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.

Abstract: An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer can have a trench in an edge region within 0.25L and 0.45L from an edge of an active region where the surface acoustic wave is generated. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure is positioned in an edge region of the active region. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, a temperature compensation layer positioned over the interdigital transducer electrode, and a velocity reduction cover that extends over at least a portion of a central region of the interdigital transducer electrode and over at least a portion of the temperature compensation layer. The velocity reduction cover is arranged to cause a velocity of an acoustic wave generated by the acoustic wave resonator to be reduced.

Abstract: A packaged acoustic wave filter component can include an acoustic wave device including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer. A support layer may be included over the acoustic wave device, and the packaged hybrid filter component can also include a bulk acoustic wave resonator over the support layer. A cap layer may extend over and encapsulate the bulk acoustic wave resonator. One or more external vias may extend through the support layer and the underlying layers of the acoustic wave device to provide electrical communication with the packaged bulk acoustic wave generator.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital transducer electrodes including a predetermined number of electrode fingers disposed on an upper surface of the substrate, and a dielectric material layer having a first portion and a second portion. The first portion is disposed on the upper surface of the substrate and between the interdigital transducer electrode fingers. The second portion is disposed above the interdigital transducer electrode fingers. The acoustic wave device further includes at least one thermally conductive bridge disposed within the dielectric material layer and contacting upper surfaces of at least two adjacent interdigital transducer electrode fingers to dissipate heat therefrom.

Abstract: An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.

Abstract: A surface acoustic wave filter package includes a cavity formed in or above a substrate and one or more surface acoustic wave filters formed on the substrate. The surface acoustic wave filter package includes a cavity roof including a filler material and having a low coefficient of thermal expansion.

Abstract: A radio frequency acoustic filter includes a plurality of resonators arranged to filter a signal. At least one resonator of the plurality of resonators includes a support substrate, a functional layer, and a piezoelectric layer. Both the piezoelectric layer and the functional layer are supported by the support substrate. An interdigital transducer structure is at least partially formed in the piezoelectric layer.

Abstract: A surface acoustic wave filter package comprising a tapered interdigital transducer structure.

Abstract: An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.

Abstract: A packaged acoustic wave component comprises a substrate having a trap-rich layer arranged at a surface of the substrate, a functional layer disposed over the surface of the substrate such as to cover that surface, a piezoelectric layer disposed over the functional layer and covering the functional layer with the exception of a peripheral portion of the functional layer, a first metal layer comprising an electrode structure disposed over the piezoelectric structure, and a second metal layer disposed partially in contact with the first metal layer and partially in contact with the peripheral portion of the functional layer.

Abstract: A packaged acoustic wave component can include a dielectric layer disposed over a substrate, a piezoelectric structure disposed over the dielectric layer, and an electrode structure disposed over the piezoelectric structure. The component can further include a polymer structure including a polymer structure wall portion and a polymer structure roof portion configured to form a cavity over the electrode structure, a metal structure disposed over the polymer structure. A buffer coating can be disposed over the metal structure. The buffer coating can include a polymer material with a filler material.

Abstract: An acoustic wave resonator is disclosed. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, a temperature compensation layer positioned over the interdigital transducer electrode, and a velocity reduction cover that extends over at least a portion of a central region of the interdigital transducer electrode and over at least a portion of the temperature compensation layer. The velocity reduction cover is arranged to cause a velocity of an acoustic wave generated by the acoustic wave resonator to be reduced.

Abstract: A radio frequency multiplexer comprises a piezoelectric substrate, a first surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of a first metal and a second metal layer disposed on the first metal layer and formed of a second metal having a higher density than the first metal, and a second surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of the first metal, but lacking the second metal layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes formed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer formed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode formed with the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The fingers each includes an edge portion and a body portion. The acoustic wave device can include a mass loading strip overlaps the edge portions of the fingers. The acoustic wave device can include a portion of the temperature compensation layer is positioned between the mass loading strip and the piezoelectric layer. The acoustic wave device can include a buffer layer that is disposed at least partially between the mass loading strip and the temperature compensation layer.

Abstract: An acoustic wave device and a method of forming the same is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode formed with the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The fingers each includes an edge portion and a body portion. The acoustic wave device can include a mass loading strip that overlaps the edge portions of the fingers. A portion of the temperature compensation layer is positioned between the mass loading strip and the piezoelectric layer. The acoustic wave device can include a buffer layer that is disposed at least partially between the mass loading strip and the temperature compensation layer. The buffer layer includes a material different from materials of the temperature compensation layer and the mass loading strip.

Abstract: An acoustic wave device is disclosed, the acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a multilayer passivation structure over the interdigital transducer electrode. The multilayer passivation structure has a thickness thinner than a thickness of the interdigital transducer electrode.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode formed with the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The fingers each includes an edge portion and a body portion. The acoustic wave device can include a mass loading strip overlaps the edge portions of the fingers. The acoustic wave device can include a portion of the temperature compensation layer is positioned between the mass loading strip and the piezoelectric layer. The acoustic wave device can include a buffer layer that is disposed at least partially between the mass loading strip and the temperature compensation layer. A thickness of the buffer layer can be at least one forth a thickness of the mass loading strip.

Abstract: A multilayer piezoelectric substrate acoustic wave device is disclosed. The multilayer piezoelectric substrate acoustic wave device can include a multilayer piezoelectric substrate, an interdigital transducer electrode over the multilayer piezoelectric substrate, and a multilayer passivation structure over the interdigital transducer electrode. The multilayer passivation structure includes a first layer that has a first passivation material and a second layer that has a second passivation material different from the first passivation material.