Abstract: A manufacturing method of an electronic device includes forming a support layer that is provided to extend from a first surface of a functional layer formed on a first substrate via a first layer, as a surface on a side opposite to the first substrate, to the first substrate and supports the functional layer with respect to the first substrate, forming a thin film holding layer on at least one of the support layer and the first surface of the functional layer, removing the first layer, joining a transfer member to a surface of the thin film holding layer on a side opposite to the functional layer, separating the functional layer, the support layer and the thin film holding layer from the first substrate, transferring the functional layer, the support layer and the thin film holding layer to a different second substrate, and removing the thin film holding layer.

Abstract: A semiconductor device includes: a planarized layer having insulating properties, the planarized layer having a first surface and a second surface opposite the first surface; a plurality of semiconductor elements formed on the first surface of the planarized layer; and a groove provided in the second surface of the planarized layer. The groove is formed in a region outside the plurality of semiconductor elements as viewed in a direction perpendicular to the first surface.

Abstract: A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a first electrode provided on the substrate, a first piezoelectric-body film stuck on the first electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, a second electrode provided on the substrate, and a second piezoelectric-body film stuck on the second electrode and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film, wherein a height from an upper surface of the substrate, on which the first electrode and the second electrode are formed, to a top of the first upper electrode film and a height from the upper surface of the substrate to a top of the second upper electrode film differ from each other.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a substrate electrode provided on the substrate, a first piezoelectric-body film stuck on the substrate electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, and a second piezoelectric-body film stuck on the first upper electrode film and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film.

Abstract: An electronic structure includes: a substrate having a first surface; a functional element unit including a functional element having an electronic function, and a protector covering the functional element, the functional element unit having a second surface facing the first surface; a support disposed between the first surface and the second surface, the support supporting the second surface; and a projection disposed on a first surface side of the substrate, the projection projecting toward the functional element unit. The support has a third surface in contact with the second surface of the functional element unit, the third surface having an area smaller than an area of the second surface. The projection has a fourth surface in contact with or close to the functional element unit, the fourth surface having an area smaller than the area of the second surface, the projection being formed by a different material from the support.

Abstract: An electronic structure includes a substrate having a first surface; a functional unit including a functional section that has an electronic function and a protective member that protects the functional section and having a second surface formed on the first surface’s side; and a support layer provided at a position to contact the first surface and having a third surface in contact with the second surface of the functional unit, area of the third surface being smaller than area of the second surface, wherein one of part of the functional unit forming the second surface of the protective member and part of the support layer forming the third surface contains organic material as its principal component and the other contains inorganic material as its principal component.

Abstract: A light emitting device includes: a first layer in which a first light emitting element is disposed; a second layer stacked on the first layer and including a second light emitting element that at least partially overlaps the first light emitting element as viewed in a light emitting direction perpendicular to a light emitting surface of the first light emitting element; and a control substrate on which the first layer is stacked and that controls light emission of the first light emitting element and the second light emitting element. The first layer includes a first surface facing the second layer in the light emitting direction, a second surface facing the control substrate in the light emitting direction, and a first opening formed from the first surface to the second surface. The second light emitting element and the control substrate are electrically connected together through the first opening.

Abstract: A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Abstract: A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Abstract: Provided is a light emitting device that includes a substrate including electrodes; a film member; light emitting elements arranged on the film member; and conductive members that electrically connect the light emitting elements and the electrodes to each other, wherein the film member has through holes formed at positions corresponding to the electrodes, and each of the conductive members includes a first conductive part extending from the light emitting element to the through hole and a second conductive part connecting the first conductive part and the electrode to each other via the through hole.

Abstract: A light emitting device includes a pixel set unit that includes a plurality of pixels arranged in a grid; first common wiring that connects together first terminals of pixels aligned in a first direction among the plurality of pixels; and second common wiring that connects together second terminals of two pixels aligned in a second direction orthogonal to the first direction among the plurality of pixels.

Abstract: A semiconductor device includes a base material and light emitting elements (or LEE) aligned in a first direction on the base material. Among the LEEs, a first LEE is provided with a first semiconductor multilayer structure and a first organic insulating film. Among the LEEs, a second LEE is provided with a second semiconductor multilayer structure and a second organic insulating film. A first multilayer structure width is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure, a first multilayer structure thickness is narrower than a second multilayer structure thickness, and a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film and a second film thickness is a thickness of a portion of the second organic insulating film.

Abstract: A semiconductor device includes: a p type first semiconductor layer that contains acceptors as impurities; an n type second semiconductor layer that is provided on the first semiconductor layer and contains donors as impurities; and a p type first diffusion portion that includes a contact portion in contact with the first semiconductor layer, the contact portion containing acceptors whose concentration is higher than that in the first semiconductor layer.

Abstract: A semiconductor device includes a first three-terminal light emitting element, a second three-terminal light emitting element that is disposed at a prescribed distance away from the first three-terminal light emitting element in a first direction, a first current supply electrode that corresponds to the first three-terminal light emitting element, a second current supply electrode that corresponds to the second three-terminal light emitting element, a first control electrode that corresponds to the first three-terminal light emitting element, a second control electrode that corresponds to the second three-terminal light emitting element, and a current extraction electrode that corresponds to the first three-terminal light emitting element and the second three-terminal light emitting element, wherein the first control electrode and the second control electrode are disposed at an inter-region that is determined between the first three-terminal light emitting element and the second three-terminal light emitting

Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.

Abstract: A semiconductor device includes a first three-terminal light emitting element, a second three-terminal light emitting element that is disposed at a prescribed distance away from the first three-terminal light emitting element in a first direction, a first current supply electrode that corresponds to the first three-terminal light emitting element, a second current supply electrode that corresponds to the second three-terminal light emitting element, a first control electrode that corresponds to the first three-terminal light emitting element, a second control electrode that corresponds to the second three-terminal light emitting element, and a current extraction electrode that corresponds to the first three-terminal light emitting element and the second three-terminal light emitting element, wherein the first control electrode and the second control electrode are disposed at an inter-region that is determined between the first three-terminal light emitting element and the second three-terminal light emitting

Abstract: A semiconductor device includes: a p type first semiconductor layer that contains acceptors as impurities; an n type second semiconductor layer that is provided on the first semiconductor layer and contains donors as impurities; and a p type first diffusion portion that includes a contact portion in contact with the first semiconductor layer, the contact portion containing acceptors whose concentration is higher than that in the first semiconductor layer.

Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.