Abstract: To provide an imaging device capable of further suppressing noise in a pixel signal. An imaging device includes: a semiconductor substrate (30) that includes a photoelectric conversion portion (31) configured to photoelectrically convert incident light, or a charge holding portion (32) configured to hold charge photoelectrically converted by the photoelectric conversion portion; a field effect transistor provided on the photoelectric conversion portion, or on the semiconductor substrate near the charge holding portion; a contact plug (26) that extends in a direction normal to one main surface of the semiconductor substrate from a gate electrode (25) of the field effect transistor; and a projecting portion (27) that extends in an in-plane direction of the one main surface of the semiconductor substrate from the contact plug.

Abstract: A solid-state imaging element according to the present technology includes a pixel array unit in which a plurality of pixels each having a photoelectric conversion portion is arranged, the pixel array unit includes, as the pixels, a first pixel for obtaining a gradation signal indicating an intensity of received light and a second pixel for detecting that a change in an amount of received light exceeds a predetermined threshold value, and a volume of a photoelectric conversion portion included in the second pixel is larger than a volume of a photoelectric conversion portion included in the first pixel.

Abstract: The present disclosure relates to an image capturing element, a manufacturing method, and an electronic device that make it possible to improve effects of reducing crosstalk. A trench part provided from a light-receiving surface side of a semiconductor substrate in which photoelectric conversion parts that photoelectrically convert emitted light are formed and between the plurality of photoelectric conversion parts; and a protrusion part provided with at least an inclined surface that is inclined with respect to a side surface of the trench part to widen a space of the trench part in one part of the trench part are provided. The present technology can be applied, for example, to backlit solid-state image capturing elements.

Abstract: The present technology relates to an imaging element, a method of manufacturing the same, and an electronic appliance capable of reducing false signal output caused by reflected light of incident light. An imaging element includes: a semiconductor substrate including a photoelectric conversion unit for each pixel, the photoelectric conversion unit photoelectrically converting incident light; a color filter layer that is formed on the semiconductor substrate and that passes the incident light of a predetermined wavelength; a light-shielding wall that is formed at a pixel boundary on the semiconductor substrate so as to have a height greater than a height of the color filter layer; and a protective substrate that is disposed via a seal resin and that protects an upper-surface side of the color filter layer. The present technology can be applied to, for example, an imaging element having a CSP structure and the like.

Abstract: The present technique relates to a camera module and an electronic apparatus that allow a camera module to be used for various purposes. The camera module includes a first pixel array in which pixels that receive light having an R, G, or B wavelength are two-dimensionally arranged in a matrix form and a second pixel array in which pixels that receive light having a wavelength region of visible light are two-dimensionally arranged in a matrix form and a first optical unit that converges incident light onto the first pixel array and a second optical unit that converges the incident light onto the second pixel array. The present technique can be for example applied to a camera module and the like.

Abstract: The present technique relates to a camera module and an electronic apparatus that allow a camera module to be used for various purposes. The camera module includes a first pixel array in which pixels that receive light having an R, G, or B wavelength are two-dimensionally arranged in a matrix form and a second pixel array in which pixels that receive light having a wavelength region of visible light are two-dimensionally arranged in a matrix form and a first optical unit that converges incident light onto the first pixel array and a second optical unit that converges the incident light onto the second pixel array. The present technique can be for example applied to a camera module and the like.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.

Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.