Abstract: A semiconductor device includes: a first semiconductor die and a second semiconductor die connected on the first semiconductor die, in which the first semiconductor die includes buffers in a second-stage configuration to an Nth-stage configuration (N being an integer of 3 or more) in a clock tree structure, and the second semiconductor die includes a logic circuit electrically connected to the buffer in the Nth-stage configuration.

Abstract: A semiconductor device includes: a first semiconductor chip that includes through electrodes; a second semiconductor chip; and an interposer that has a recessed portion formed in a front surface thereof and includes a first wiring provided under a bottom surface of the recessed portion, in which the first semiconductor chip is fitted in the recessed portion with a chip top surface thereof flipped down to be electrically connected to the first wiring, the second semiconductor chip is connected on the front surface, of the interposer, around the recessed portion, and at the same time, is stacked on the first semiconductor chip in a manner to partially overlap the first semiconductor chip, and is electrically connected to the first semiconductor chip via the through electrodes.

Abstract: A semiconductor device includes: a first semiconductor die and a second semiconductor die connected on the first semiconductor die, in which the first semiconductor die includes buffers in a second-stage configuration to an Nth-stage configuration (N being an integer of 3 or more) in a clock tree structure, and the second semiconductor die includes a logic circuit electrically connected to the buffer in the Nth-stage configuration.

Abstract: A semiconductor device includes a first semiconductor chip including plural circuit blocks provided on a semiconductor substrate, and plural through-silicon vias that are arranged so as to surround the outer periphery of each of the plural circuit blocks and that penetrate the semiconductor substrate, and a second semiconductor chip that is stacked on the first semiconductor chip, and that is supplied with a power source through the plural through-silicon vias.

Abstract: A semiconductor device includes: a first semiconductor chip that includes through electrodes; a second semiconductor chip; and an interposer that has a recessed portion formed in a front surface thereof and includes a first wiring provided under a bottom surface of the recessed portion, in which the first semiconductor chip is fitted in the recessed portion with a chip top surface thereof flipped down to be electrically connected to the first wiring, the second semiconductor chip is connected on the front surface, of the interposer, around the recessed portion, and at the same time, is stacked on the first semiconductor chip in a manner to partially overlap the first semiconductor chip, and is electrically connected to the first semiconductor chip via the through electrodes.

Abstract: A semiconductor device includes: a plurality of semiconductor chips which are stacked; a plurality of circuit blocks respectively included in the plurality of semiconductor chips; a first power supply domain that supplies power and stops the supply of the power to one of the plurality of circuit blocks independently of the other circuit blocks; and a second power supply domain that supplies power and stops the supply of the power to at least two of the plurality of circuit blocks in common and supplies the power and stops the supply of the power independently of the other circuit blocks.

Abstract: A semiconductor device includes a first semiconductor chip including plural circuit blocks provided on a semiconductor substrate, and plural through-silicon vias that are arranged so as to surround the outer periphery of each of the plural circuit blocks and that penetrate the semiconductor substrate, and a second semiconductor chip that is stacked on the first semiconductor chip, and that is supplied with a power source through the plural through-silicon vias.

Abstract: A semiconductor device includes: a plurality of semiconductor chips which are stacked; a plurality of circuit blocks respectively included in the plurality of semiconductor chips; a first power supply domain that supplies power and stops the supply of the power to one of the plurality of circuit blocks independently of the other circuit blocks; and a second power supply domain that supplies power and stops the supply of the power to at least two of the plurality of circuit blocks in common and supplies the power and stops the supply of the power independently of the other circuit blocks.