Abstract: An object of the present invention is to provide a highly practical electrolyte solution which has high oxidation resistance and enables dissolution-precipitation of magnesium to proceed repeatedly and stably. The present invention relates to an electrolyte solution for a magnesium battery comprising a mixture of a compound represented by the general formula [1], a Lewis acid or a compound represented by the general formula [4], and a solvent; an electrochemical device containing the electrolyte solution; and a compound represented by the general formula [1].

Abstract: An object of the present invention is to provide an excellent binder agent composition solving problems such as the decrease in a charge/discharge capacity that occurs in a case where a silicon-containing active material is used, a slurry composition and an electrode in which the binder agent composition is used, and a method for preparing the electrode.

Abstract: The present invention addresses the problem of providing a kit for a cleaning agent, which is used for the purpose of preparing a cleaning agent that maintains, even after long-term storage, adequate impurity removal performance from the surface of a semiconductor substrate that has been subjected to a CMP process. The present invention also addresses the problem of providing a method for preparing the above-described cleaning agent. A kit for a cleaning agent according to the present invention is a kit for preparing a cleaning agent which is used for cleaning of a semiconductor substrate that has been subjected to a CMP process, and which has a pH of from 7.5 to 13.0. This kit for a cleaning agent comprises a first liquid that is acidic and contains a compound represented by formula (1) and a second liquid that is alkaline and contains a basic compound; and an acidic compound is contained in at least one of the first liquid and the second liquid.

Abstract: The present invention has an object to provide a positive electrode active material for a magnesium battery; and a magnesium battery which has a high operating voltage with respect to magnesium and can be repeatedly charged and discharged at a high capacity retention rate, using the positive electrode active material. The present invention relates to a positive electrode active material for a magnesium battery, containing a compound represented by the general formula (1), a positive electrode material composition for a magnesium battery, a positive electrode for a magnesium battery, and a magnesium battery: AgpSO4??(1) [in the formula (1), p satisfies 0<p?2].

Abstract: An object of the present invention is to provide an excellent binder agent composition solving problems such as the decrease in a charge/discharge capacity that occurs in a case where a silicon-containing active material is used, a slurry composition and an electrode in which the binder agent composition is used, and a method for preparing the electrode.

Abstract: An object of the present invention is to provide an excellent binder agent composition solving problems such as the decrease in a charge/discharge capacity, a slurry composition and an electrode in which the binder agent composition is used, and a method for preparing the electrode. The present invention relates to “a binder agent composition containing a copolymer containing a monomer unit derived from acrylic acid and one or two kinds of monomer units derived from a compound represented by the following general formula (I) or the like as constituent components, a bivalent to decavalent alcohol, and water; [in the formula, R1 represents a hydrogen atom or a methyl group, in a case where R2 is a hydrogen atom, R1 represents a methyl group, and R2 represents a hydrogen atom; an alkyl group; an alkyl group substituted with a fluorine atom or a hydroxy group, or the like.

Abstract: It is an object of the present invention to provide an electrolytic solution having high oxidation decomposition potential, where dissolution and deposition of magnesium proceed repeatedly and stably, using a non-nucleophilic alkoxide-type magnesium salt.

Abstract: The present invention relates to a cleaning agent for a semiconductor substrate having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film to be used in a post-process of a chemical mechanical polishing process, comprising (A) an organic acid represented by general formula described in the present specification, (B) amines selected from the group consisting of (B-1) diamines, (B-2) amidines, (B-3) azoles, and (B-4) pyrazines or pyrimidines, represented by general formulae described in the present specification, (C) a hydroxylamine derivative, and (D) an oxygen scavenger represented by general formula described in the present specification, and being an aqueous solution having a pH of 10 or higher; and a processing method for the surface of a semiconductor substrate, having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film, which comprises using the cleaning agent.

Abstract: It is an object of the present invention to provide an electrolytic solution having high oxidation decomposition potential, where dissolution and deposition of magnesium proceed repeatedly and stably, using a non-nucleophilic alkoxide-type magnesium salt.

Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: The present invention relates to a cleaning agent for a semiconductor substrate having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film to be used in a post-process of a chemical mechanical polishing process, comprising (A) an organic acid represented by general formula described in the present specification, (B) amines selected from the group consisting of (B-1) diamines, (B-2) amidines, (B-3) azoles, and (B-4) pyrazines or pyrimidines, represented by general formulae described in the present specification, (C) a hydroxylamine derivative, and (D) an oxygen scavenger represented by general formula described in the present specification, and being an aqueous solution having a pH of 10 or higher; and a processing method for the surface of a semiconductor substrate, having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film, which comprises using the cleaning agent.

Abstract: It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film.

Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.

Abstract: An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.

Abstract: A cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; (wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).

Abstract: The purpose of the present invention to provide: a composition which can be used for water-repellent treating of the entire surface of a semiconductor substrate having a pattern formed by laminating a Si-containing insulating layer and a metal layer, at one time; and a method for water-repellent treatment of the semiconductor substrate surface using the composition. The present invention relates to: (1) a composition for water-repellent treatment of a semiconductor substrate surface comprising a) at least one kind of a compound selected from the group consisting of a long-chain alkyl tertiary amine and a long-chain alkyl ammonium salt, b) a base or an acid generating agent, having a condensed ring structure or forming a condensed ring structure by generating a base or an acid and c) a polar organic solvent, and (2) a method for water-repellent treatment of the semiconductor substrate surface having the pattern formed by laminating the Si-containing insulating layer and the metal layer, using the composition.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.