Abstract: According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

Abstract: A urinal having the bowl surface formed by only the front face portion in an upper region which does not have any forwardly projecting plate-like side walls at opposite sides thereof as in the conventional urinal. Flush water cleans a wider part of the bowl surface than in the prior art as well as reduce an area of the bowl surface that is not cleaned and provide an improved cleanliness and sanitation of the bowl surface. The urinal includes: a bowl surface being arranged so as to situate between a line segment connecting the left and right side edges and an arcuate segment of a circle having a diameter corresponding to the line segment, as viewed in the horizontal section through the flush water discharging device.

Abstract: According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.

Abstract: According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.

Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused in the light emitting layer. The second layer has a second impurity concentration of the first conductivity type higher than the first impurity concentration, and includes a first and second surfaces. The first surface is with the first layer. The second surface has a formation region and a non-formation region of the first electrode. The non-formation region includes convex structures with an average pitch not more than a wavelength of the emission light. The cladding layer is provided between the first layer and the light emitting layer and has an impurity concentration of the first conductivity type.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.

Abstract: According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.

Abstract: According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.

Abstract: [PROBLEM] The purpose of the present invention is to provide a reference electrode which is easy to manufacture and handle, its manufacturing method, and an electrochemical cell using this. [METHOD FOR SOLVING THE PROBLEM] The reference electrode 10 comprises a core material 11 extending parallel to the anode 14 or the cathode 16 from a terminal, a lithium membrane 12 coating from a tip of the core material 11 to a field with predetermined length, and an insulator 13 partially coating a field uncoated with the lithium membrane 12 on the core material 11. The material consisting of at least a surface of the core material 11 is a conductive material which is substantially unresponsive to lithium or lithium alloy. The maximum width in a cross section of the core material 11 is preferably in the range of not less than 5 micrometers but not more than 50 micrometers, and thickness of the lithium membrane is preferably in the range of not less than 0.1 micrometers but not more than 20 micrometers.

Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused in the light emitting layer. The second layer has a second impurity concentration of the first conductivity type higher than the first impurity concentration, and includes a first and second surfaces. The first surface is with the first layer. The second surface has a formation region and a non-formation region of the first electrode. The non-formation region includes convex structures with an average pitch not more than a wavelength of the emission light. The cladding layer is provided between the first layer and the light emitting layer and has an impurity concentration of the first conductivity type.

Abstract: A constant current circuit and a constant current generating method, wherein when a voltage in substantially no temperature dependence is applied to an element to output a constant current, temperature dependence of the element can be cancelled. A current indicative of first temperature dependence, which is generated by applying a bias voltage in substantially no temperature dependence to a first current setting section, and a current indicative of second temperature dependence, which is generated by applying a bias voltage in substantially no temperature dependence to a second current setting section are added and outputted as a constant current in substantially no temperature dependence.

Abstract: The present invention provides a constant current circuit and a constant current generating method, wherein when a voltage slight in temperature dependence is applied to an element to output a constant current, temperature dependence of the element can be cancelled. A current indicative of first temperature dependence, which is generated by applying a bias voltage slight in temperature dependence to a first current setting section, and a current indicative of second temperature dependence, which is generated by applying a bias voltage slight in temperature dependence to a second current setting section are added and outputted as a constant current slight in temperature dependence.

Abstract: Disclosed is a flush toilet unit, which is capable of measuring a urine volume with a high degree of accuracy without making a significant change to a conventional water-closet structure.

Abstract: A toilet device with a system for inspecting the health condition of the toilet user includes a toilet having a bowl surface with a urine reservoir for holding a urine sample, a box having at least a water tank disposed rearwardly and upwardly of the toilet, the box having an outlet opening in a bottom thereof, a slider for holding a urine test paper piece, the slider being movable from within the box toward the urine reservoir to immerse the urine test paper piece in the urine sample in the urine reservoir, a urine analyzing device disposed in the box, for analyzing constituents of the urine sample attached to the urine test paper piece, a lifting and lowering mechanism for reciprocally lifting and lowering the slider through the outlet opening along a substantially vertical inclined path between the urine analyzing device and the urine reservoir, and a display panel for controlling the lifting and lowering mechanism and the urine analyzing device and for displaying results of a urine analysis effected by th