Abstract: A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor 96A provided in a matching device of a plasma generation system includes a RF voltage detector 100; a voltage-detection-signal generating circuit 102; an arithmetic-average-value calculating circuit 104; a weighted-average-value calculating circuit 106; and a moving-average-value calculating unit 108 of a voltage sensor system, and also includes a RF electric current detector 110; an electric current-detection-signal generating circuit 112; an arithmetic-average-value calculating circuit 114; a weighted-average-value calculating circuit 116; a moving-average-value calculating unit 118; and an impedance calculating circuit 120 of an electric current sensor system.

Abstract: In a plasma processing apparatus, target values for feedback control to be applied to a progressive wave power PF as control parameters, i.e., control instruction values Con and Coff are switched during a pulse-on period Ton and a pulse-off period Toff in each cycle of a modulation pulse, respectively. That is, a first feedback control for making the progressive wave power PF approximate to a first control instruction value Con is performed during the pulse-on period Ton, whereas a second feedback control for making the progressive wave power PF approximate to a second control instruction value Coff is performed during the pulse-off period Toff.

Abstract: In a plasma processing apparatus, target values for feedback control to be applied to a progressive wave power PF as control parameters, i.e., control instruction values Con and Coff are switched during a pulse-on period Ton and a pulse-off period Toff in each cycle of a modulation pulse, respectively. That is, a first feedback control for making the progressive wave power PF approximate to a first control instruction value Con is performed during the pulse-on period Ton, whereas a second feedback control for making the progressive wave power PF approximate to a second control instruction value Coff is performed during the pulse-off period Toff.

Abstract: A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor 96A provided in a matching device of a plasma generation system includes a RF voltage detector 100; a voltage-detection-signal generating circuit 102; an arithmetic-average-value calculating circuit 104; a weighted-average-value calculating circuit 106; and a moving-average-value calculating unit 108 of a voltage sensor system, and also includes a RF electric current detector 110; an electric current-detection-signal generating circuit 112; an arithmetic-average-value calculating circuit 114; a weighted-average-value calculating circuit 116; a moving-average-value calculating unit 118; and an impedance calculating circuit 120 of an electric current sensor system.